TMF8901F Semiconductor Si RF LDMOS Transistor Unit in mm SOT-89 □ Applications - VHF and UHF wide band amplifier 4 □ Features - Power gain GP = 12.5 dB at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz - Output power POUT = 32 dBm at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz - Drain efficiency ηD = 60 % (typ.) Pin Configuration □ Marking 1. Gate 4 2. Source 8901 3. Drain 4. Source 1 2 3 □ Absolute Maximum Ratings (TA = 25 ℃) Symbol Ratings Unit Drain to Source Voltage VDS 13.0 V Gate to Source Voltage VGS 4.0 V Drain Current ID 1.2 A Total Power Dissipation Ptot 3 W Channel Temperature Tch 150 ℃ Storage Temperature Tstg -65 ~ 150 ℃ Parameter TMF8901F □ Electrical Characteristics (TA = 25 ℃) Parameter Symbol Gate to Source Leakage Current IGSS Drain to Source Leakage Current Test Conditions Min. Max. Unit VGSS = 3.0 V 1 ㎂ IDSS VDSS = 8.5 V, VGS = 0 V 10 ㎂ Threshold Voltage Vth VDS = 4.8 V, ID = 1 ㎃ 1.4 V Transconductance Gm VDS = 4.8 V, ID = 400 ㎃ 0.8 Typ. 1.0 700 mS Drain to Source Breakdown Voltage BVDSS IDSS = 10 ㎂ Drain to Source On-Voltage VDSon VGS = 4 V, ID = 600 ㎃ 0.4 V GP f = 470 MHz, PIN = 20 dBm VDS = 4.5 V, IDset = 200 ㎃ 12.5 dB POUT f = 470 MHz, PIN = 20 dBm VDS = 4.5 V, IDset = 200 ㎃ 32 dBm 670 mA 60 % Power Gain Output Power 13 V Operating Current Iop Drain Efficiency ηD Power Gain GP f = 470 MHz, PIN = 15 dBm VDS = 4.5 V, IDset = 50 ㎃ 14 dB POUT f = 470 MHz, PIN = 15 dBm VDS = 4.5 V, IDset = 50 ㎃ 29 dBm 400 mA 44 % Output Power Operating Current Iop Drain Efficiency ηD TMF8901F □ Typical Characteristics ( TA = 25℃, unless otherwise specified) Output Power, Power Gain, Drain Efficiency vs. Input Power 80 f = 470 MHz Iidle = 200 mA VDS = 4.5 V 70 60 POUT 25 50 ηD 20 40 GP 15 30 10 20 5 10 0 0 5 10 15 20 Output Power, POUT (dBm) Power Gain, GP (dB) 30 f = 470 MHz Iidle = 50 mA VDS = 4.5 V 35 Drain Efficiency, ηD (%) Output Power, POUT (dBm) Power Gain, GP (dB) 35 80 40 0 25 60 30 POUT 50 25 ηD 40 20 GP 15 30 10 20 5 10 0 0 5 Input Power, PIN (dBm) 10 15 20 0 25 Input Power, PIN (dBm) Output Power vs. Input Power Drain Current vs. Input Power 900 40 f = 470 MHz VDS = 4.5 V 30 Iidle = 200 mA 25 20 Iidle = 50 mA 15 f = 470 MHz VDS = 4.5 V 800 Drain Current, IDS (mA) 35 Output Power, POUT (dBm) 70 10 700 600 500 Iidle = 200 mA 400 300 Iidle = 50 mA 200 5 100 0 0 0 5 10 15 20 Input Power, PIN (dBm) 25 0 5 10 15 20 Input Power, PIN (dBm) 25 Drain Efficiency, ηD (%) 40 TMF8901F Power Gain, Drain Efficiency vs. Drain Current 70 18 f = 470 MHz Iidle = 200 mA PIN = 20 dBm ηD 14 60 13 GP 55 12 16 Power Gain, GP (dB) 65 16 15 11 50 10 2 3 4 5 6 7 68 66 64 15 ηD 14 62 GP 13 60 12 58 11 56 10 54 9 52 8 8 0 50 100 150 200 250 Drain Voltage, VDS (V) Drain Idle Current, Iidle (mA) Output Power vs. Input Power Drain Current vs. Input Power 40 50 300 1100 VDS = 6 V f = 470 MHz Iidle = 200 mA 1000 f = 470 MHz Iidle = 200 mA 900 30 Drain Current, IDS (mA) 35 Output Power, POUT (dBm) f = 470 MHz PIN = 20 dBm VDS = 4.5 V 17 Drain Efficiency, ηD (%) Power Gain, GP (dB) 17 70 18 VDS = 3.6 V VDS = 4.5 V 25 20 15 VDS = 6.0 V 800 VDS = 4.5 V 700 600 500 VDS = 3.6 V 400 300 200 10 100 5 0 5 10 15 20 Input Power, PIN (dBm) 25 0 0 5 10 15 20 Input Power, PIN (dBm) 25 Drain Efficiency, ηD (%) Power Gain, Drain Efficiency vs. Drain Voltage TMF8901F Output Power, Power Gain, Drain Efficiency vs. Input Power 60 25 50 ηD POUT 20 40 GP 15 30 10 20 5 10 0 0 5 10 15 20 Output Power, POUT (dBm) Power Gain, GP (dB) 30 80 f = 470 MHz Iidle = 50 mA VDS = 6.0 V 35 70 Drain Efficiency, ηD (%) 35 Output Power, POUT (dBm) Power Gain, GP (dB) 40 80 f = 470 MHz Iidle = 200 mA VDS = 3.6 V 70 30 60 POUT 25 50 ηD 20 GP 15 30 10 20 5 10 0 0 25 40 0 5 10 15 20 0 25 Input Power, PIN (dBm) Input Power, PIN (dBm) □ Test Circuit Schematic Diagram VGG R1 R=6.8 kOhm C6 C=100 nF C7 C=10 nF C5 C=10 nF C8 C=100 nF VDD L2 L=100 nH R= C1 C=2.2 nF L1 M odel=0.4x2.0x6T T L1 Subst="M Sub1" W=1.37 m m L=22 m m T M F8901F P_IN R2 R=56 Ohm C2 C=24 pF C9 C=2.2 nF Test Board : 0.8mm FR4 glass epoxy C4 C=2.2 nF T L2 Subst="M Sub1" W=1.37 m m L=15 m m P_OUT C3 C=18 pF Drain Efficiency, ηD (%) 40