SEME-LAB D1213

TetraFET
D1213UK
METAL GATE RF SILICON FET
MECHANICAL DATA
E
B
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
6W – 7.2V – 500MHz
SINGLE ENDED
C
D
8
1
2
7
A
3
6
F
5
4
Q
O
N
M
J
K
L
I
P
H
G
FEATURES
DBC1 Package
PIN 1 Source
PIN 5 Source
• SIMPLIFIED AMPLIFIER DESIGN
PIN 2 Drain
PIN 6 Gate
• SUITABLE FOR BROAD BAND APPLICATIONS
PIN 3 Drain
PIN 7 Gate
PIN 4 Source
PIN 8 Source
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
mm
6.47
0.76
45°
0.76
1.14
2.67
11.73
8.43
7.92
0.20
0.64
0.30
3.25
2.11
6.35SQ
1.65
0.13
Tol.
0.08
0.08
5°
0.08
0.08
0.08
0.13
0.08
0.08
0.02
0.02
0.02
0.08
0.08
0.08
0.51
max
Inches
.255
.030
45°
.030
.045
.105
.462
.332
.312
.008
.025
.012
.128
.083
.250SQ
.065
.005
• LOW Crss
Tol.
.003
.003
5°
.003
.003
.003
.005
.003
.003
.001
.001
.001
.003
.003
.003
.020
max
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
BVDSS
BVGSS
ID(sat)
Tstg
Tj
Semelab plc.
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website: http://www.semelab.co.uk
E-mail: [email protected]
58W
40V
±20V
20A
–65 to 150°C
200°C
Prelim. 7/99
D1213UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
BVDSS
Drain–Source
Typ.
Max. Unit
V
VGS = 0
ID = 100mA
VDS = 12.5V
VGS = 0
1
mA
VGS = 20V
VDS = 0
1
µA
VGS(th) Gate Threshold Voltage*
ID = 10mA
VDS = VGS
0.5
7
V
gfs
Forward Transconductance*
VDS = 10V
ID = 2A
1.6
S
GPS
Common Source Power Gain
PO = 6W
10
dB
η
Drain Efficiency
VDS = 7.2V
50
%
VSWR Load Mismatch Tolerance
f = 500MHz
20:1
—
IDSS
IGSS
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
IDQ = 0.5A
Ciss
Input Capacitance
VDS = 0
Coss
Output Capacitance
VDS = 12.5V VGS = 0
Crss
Reverse Transfer Capacitance
VDS = 12.5V VGS = 0
* Pulse Test:
VGS = –5V f = 1MHz
40
120
pF
f = 1MHz
80
pF
f = 1MHz
8
pF
Pulse Duration = 300 µs , Duty Cycle ≤ 2%
THERMAL DATA
RTHj–case
Semelab plc.
Thermal Resistance Junction – Case
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website: http://www.semelab.co.uk
E-mail: [email protected]
Max. 3°C / W
Prelim. 7/99
D1213UK
10
P out
8
80
6
60
4
40
f = 500MHz
Idq = 0.5A
V ds = 7.2V
2
0
11
8
10
P out
0
0.5
1
1.5
P in W
f = 500MHz
Idq = 0.5A
V ds = 7.2V
6
Drain Efficiency
W
W
10
100
%
4
2
9
8
Gain
dB
7
20
0
0
0
2.5
2
0.5
1
1.5
2
6
2.5
P in W
Pout
Drain Efficiency
Pout
Gain
Figure 1 – Power Output and Efficiency
vs. Power Input.
Figure 2 – Power Output & Gain
vs. Power Input.
-15
-20
D1213UK
-25
OPTIMUM SOURCE AND LOAD IMPEDANCE
IMD3
dBc
f 1 = 500.0 MHz
f 2 = 500.1 MHz
V ds = 7.2V
Idq = 0.5A
-30
-35
-40
-45
0
2
4
6
8
10
Frequency
MHz
500
ZS
ZL
Ω
Ω
2.3 - j0.4 2.1 - j1.9
P out W PEP
Figure 3 – IMD vs. Output Power.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website: http://www.semelab.co.uk
E-mail: [email protected]
Prelim. 7/99
D1213UK
Typical S Parameters
!
VDS = 7.2V
IDQ = 0.2A
# MHZ S MA R 50
!Freq
MHz
70
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
Semelab plc.
S11
mag
0.69
0.74
0.82
0.86
0.89
0.90
0.91
0.92
0.93
0.93
0.93
0.93
0.93
0.92
0.92
0.91
0.92
0.94
0.95
0.93
ang
-147
-153
-161
-167
-172
-176
-179
178
174
171
168
164
162
158
155
153
151
148
144
140
S21
mag
6.8
4.5
2.5
1.6
1.2
1.0
0.7
0.6
0.5
0.5
0.4
0.4
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.4
ang
68
59
47
42
35
33
27
26
23
21
20
15
18
16
21
23
29
29
31
29
S12
mag
0.021
0.017
0.015
0.024
0.037
0.052
0.064
0.082
0.095
0.116
0.130
0.148
0.159
0.173
0.182
0.189
0.207
0.235
0.275
0.308
ang
-1
10
50
78
83
87
82
82
80
77
73
66
66
60
58
56
59
59
56
52
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website: http://www.semelab.co.uk
E-mail: [email protected]
S22
mag
0.77
0.79
0.84
0.87
0.89
0.90
0.91
0.92
0.93
0.93
0.94
0.94
0.95
0.94
0.95
0.96
0.96
0.95
0.93
0.92
ang
-160
-163
-167
-169
-171
-173
-175
-177
-178
-179
180
178
177
177
176
175
173
171
170
168
Prelim. 7/99