DATA SHEET N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power (CW) with high linear gain, high efficiency and excellent distortion and as a driver amplifier for our NE6510179A and NE6510379A. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures. FEATURES • GaAs HJ-FET structure • High output power : Pout = +27.0 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, Pin = +13 dBm Pout = +27.0 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 1.9 GHz, Pin = +15 dBm Pout = +29.5 dBm TYP. @ VDS = 5.0 V, IDset = 50 mA, f = 1.9 GHz, Pin = +15 dBm • High linear gain : GL = 14.0 dB TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, Pin = 0 dBm GL = 12.0 dB TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 1.9 GHz, Pin = 0 dBm GL = 12.0 dB TYP. @ VDS = 5.0 V, IDset = 50 mA, f = 1.9 GHz, Pin = 0 dBm • High power added efficiency : 60 % TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, Pin = +13 dBm 60 % TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 1.9 GHz, Pin = +15 dBm 58 % TYP. @ VDS = 5.0 V, IDset = 50 mA, f = 1.9 GHz, Pin = +15 dBm ORDERING INFORMATION Part Number NE651R479A-T1 Package 79A Supplying Form • 12 mm wide embossed taping • Qty 1 kpcs/reel Remark To order evaluation samples, consult your NEC sales representative (Part number for sample order: NE651R479A). Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P13670EJ2V0DS00 (2nd edition) Date Published June 2000 NS CP(K) Printed in Japan The mark • shows major revised points. © 1998, 2000 NE651R479A ABSOLUTE MAXIMUM RATINGS (TA = +25 °C) Operation in excess of any one of these parameters may result in permanent damage. Parameter Symbol Ratings Unit Drain to Source Voltage VDS 8 V Gate to Source Voltage VGSO −4 V Drain Current ID 1.0 A Gate Forward Current IGF 10 mA Gate Reverse Current IGR 10 mA Total Power Dissipation Ptot 2.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg −65 to +150 °C RECOMMENDED OPERATING CONDITIONS Parameter Drain to Source Voltage Gain Compression Channel Temperature Symbol Test Conditions MIN. TYP. MAX. Unit VDS − 3.5 5.5 V Gcomp − − 5.0 Tch − − +110 °C MIN. TYP. MAX. Unit Note dB Note Recommended maximum Gain Compression is 3.0 dB at VDS > 4.2 V ELECTRICAL CHARACTERISTICS (TA = +25 °C, unless otherwise specified, using NEC standard test fixture.) Parameter Symbol Test Conditions Saturated Drain Current IDSS VDS = 2.5 V, VGS = 0 V − 0.7 − A Pinch-off Voltage Vp VDS = 2.5 V, ID = 14 mA −2.0 − −0.4 V Igd = 14 mA 12 − − V − 30 50 °C/W Gate to Drain Break Down Voltage BVgd Thermal Resistance Rth Channel to Case Output Power Pout f = 1.9 GHz, VDS = 3.5 V, 26.0 27.0 − dBm Drain Current ID Pin = +15 dBm, Rg = 1 kΩ, − 220 − mA ηadd IDset = 50 mA (RF OFF) 52 60 − % GL Note 2 − 12.0 − dB Power Added Efficiency Linear Gain Note 1 Notes 1. Pin = 0 dBm 2. DC performance is 100 % testing. RF performance is testing several samples per wafer. Wafer rejection criteria for standard devices is 1 reject for several samples. 2 Data Sheet P13670EJ2V0DS00 NE651R479A TYPICAL RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED) (TA = +25 °C, unless otherwise specified, using NEC standard test fixture.) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Output Power Pout f = 900 MHz, VDS = 3.5 V, − 27.0 − dBm Drain Current ID Pin = +13 dBm, Rg = 1 kΩ, − 230 − mA IDset = 50 mA (RF OFF) − 60 − % − 14.0 − dB MIN. TYP. MAX. Unit ηadd Power Added Efficiency Linear Gain Note GL Note Pin = 0 dBm TYPICAL RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED) (TA = +25 °C, unless otherwise specified, using NEC standard test fixture.) Parameter Symbol Test Conditions Output Power Pout f = 1.9 GHz, VDS = 5.0 V, − 29.5 − dBm Drain Current ID Pin = +15 dBm, Rg = 1 kΩ, − 350 − mA IDset = 50 mA (RF OFF) − 58 − % − 12.0 − dB ηadd Power Added Efficiency Linear Gain Note GL Note Pin = 0 dBm TYPICAL CHARACTERISTICS (TA = +25 °C) OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER 25 500 VDS = 3.5 V IDset = 50 mA (RF OFF) Rg = 1 kΩ, f = 1.9 GHz 400 Pout 300 20 15 200 ID 100 10 5 –5 Drain Current ID (mA) Output Power Pout (dBm) 30 0 5 10 15 20 0 25 Input Power Pin (dBm) Remark The graph indicates nominal characteristics. Data Sheet P13670EJ2V0DS00 3 NE651R479A S-PARAMETERS Test Conditions: VDS = 3.5 V, IDset = 50 mA (RF OFF) Frequency 4 S11 S21 S12 S22 GHz MAG. ANG. (deg.) MAG. ANG. (deg.) MAG. ANG. (deg.) MAG. ANG. (deg.) 600 0.868 −168.8 6.120 96.9 0.046 15.7 0.536 −170.3 700 0.866 −172.7 5.225 95.0 0.046 14.9 0.537 −173.9 800 0.864 −176.9 4.641 93.0 0.045 14.8 0.541 −177.1 900 0.863 −179.4 4.145 91.6 0.045 15.4 0.540 −179.6 1000 0.868 176.6 3.730 89.4 0.045 15.8 0.541 178.0 1100 0.862 173.6 3.359 88.3 0.045 16.6 0.542 175.5 1200 0.860 170.8 3.152 87.5 0.046 16.6 0.542 173.4 1300 0.861 168.3 2.894 85.8 0.047 15.7 0.535 171.9 1400 0.859 165.4 2.695 85.2 0.047 15.5 0.533 170.1 1500 0.861 162.2 2.527 84.2 0.046 16.1 0.533 167.8 1600 0.862 159.3 2.387 82.9 0.046 17.0 0.533 165.9 1700 0.857 156.7 2.261 82.8 0.047 17.1 0.532 163.8 1800 0.855 153.5 2.229 80.9 0.046 17.0 0.537 161.1 1900 0.856 150.0 2.093 77.8 0.046 16.6 0.538 158.4 2000 0.860 146.7 1.946 76.9 0.045 16.3 0.537 156.0 2100 0.860 142.9 1.884 75.5 0.045 16.9 0.533 154.0 2200 0.863 140.1 1.785 73.6 0.045 18.4 0.533 149.6 Data Sheet P13670EJ2V0DS00 NE651R479A APPLICATION CIRCUIT EXAMPLE f = 1.9 GHz (Unit: mm) VGS VDS Rg 1 000 p Tantalum Condenser Tantalum Condenser 100 µF 47 µF λ /4 LINE λ /4 OPEN STUB 12 2 C1 5 6 6 C2 3 3 INPUT λ /4 OPEN STUB 5 3 5 2 43 f = 1.9 GHZ VDS = 3.5 V IDset = 50 mA (RF OFF) C1 = 30 pF C2 = 30 pF 2 7 2 8 50 Ω LINE OUTPUT 12 GND Rg = 1 kΩ Substrate: Teflon glass (ε r = 2.6) t = 0.8 mm APPLICATION CIRCUIT EXAMPLE f = 900 MHz (Unit: mm) VGS VDS Rg 1 000 p Tantalum Condenser Tantalum Condenser 100 µF 47 µF λ /4 OPEN STUB λ /4 OPEN STUB λ /4 LINE 50 Ω LINE 2 5 C1 4 9 3 R2 C3 4 INPUT 4 4 3 2 9 2 C4 C5 f = 900 MHZ VDS = 3.5 V IDset = 50 mA (RF OFF) C1 = 30 pF C2 = 30 pF C3 = 1 000 pF C4 = 6 pF 5 3 R1 C5 = 3 pF C6 = 6 pF C7 = 1 pF 2 C7 C6 10 R1 = 5.1 Ω R2 = 30 Ω Rg = 1 kΩ Data Sheet P13670EJ2V0DS00 C2 3 3 13 5 9 OUTPUT 4 GND Substrate: Teflon glass (ε r = 2.6) t = 0.8 mm 5 NE651R479A 79A PACKAGE DIMENSIONS (Unit: mm) BOTTOM VIEW 4.2 MAX. 1.5±0.2 Source Drain 1.0 MAX. 1.2 MAX. Gate 4.4 MAX. X 8 Drain 0.8±0.15 H 0.6±0.15 5.7 MAX. Gate T Source 0.8 MAX. 0.4±0.15 5.7 MAX. 0.9±0.2 0.2±0.1 3.6±0.2 79A PACKAGE RECOMMENDED P.C.B. LAYOUT (Unit: mm) 4.0 1.7 Stop up the hole with a rosin or something to avoid solder flow. 1.0 Gate 0.5 1.2 5.9 Drain Source 0.5 0.5 6.1 6 Data Sheet P13670EJ2V0DS00 through hole φ 0.2 × 33 NE651R479A RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Soldering Conditions Infrared Reflow Package peak temperature: 235 °C or below, Time: 30 seconds or less (at 210 °C or higher), Count: 2 times or less, Note Exposure: limit: None Partial Heating Pin temperature: 260 °C or below, Time: 5 seconds or less (per pin row) Note Exposure: limit: None Recommended Condition Symbol IR35-00-2 − Note After opening the dry pack, store it at 25 °C or less and 65 % RH or less for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). Data Sheet P13670EJ2V0DS00 7 NE651R479A CAUTION The great care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal. • The information in this document is current as of June, 2000. 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