TRIQUINT TGA2710

Advance Product Information
September 1, 2005
10.5 – 12GHz High Power Amplifier
TGA2710
Key Features
•
•
•
•
•
•
Frequency Range: 10.5 -12.0 GHz
38 dBm Nominal Output Power
19 dB Nominal Gain
Bias: 7-9V, 1.4A & 1.05A (~ 2A under RF drive)
0.25 um 3MI pHEMT Technology
Chip Dimensions 3.52 x 2.61 x 0.10 mm
(0.139 x 0.103 x 0.004 in)
Primary Applications
•
•
Point-to-Point Radio
Communications
Measured Fixtured Data
Product Description
The TriQuint TGA2710 is a High Power
Amplifier MMIC for 10.5 – 12GHz applications.
The part is designed using TriQuint’s 0.25um
3MI pHEMT production process.
The TGA2710 nominally provides 38 dBm
output power and 41% PAE for bias of 9V,
1.05A. The typical gain is 19dB.
CW Gain (dB)
24
18
17
10.4 10.6 10.8
The TGA2710 is 100% DC and RF tested onwafer to ensure performance compliance.
7V, 1.4A
8V, 1.4A
9V, 1.05A
11
11.2 11.4 11.6 11.8
12
Frequency (GHz )
CW Saturated Output Power (dBm)
Lead-Free & RoHS compliant.
20
19
16
15
14
The part is ideally suited for low cost markets
such as Point-to-Point Radio and
Communications.
The TGA2710 has a protective surface
passivation layer providing environmental
robustness.
23
22
21
40
39
38
37
36
35
34
33
32
31
30
10.4 10.6 10.8
7V, 1.4A
8V, 1.4A
9V, 1.05A
11
11.2 11.4 11.6 11.8
12
Frequency (GHz )
Note: Devices is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change
without notice
1
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
Advance Product Information
September 1, 2005
TGA2710
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
PARAMETER
VALUE
NOTES
10 V
2/
Vd
Drain Voltage
Vg
Gate Voltage Range
Id
Drain Current
3.85 A
2/ 3/
Ig
Gate Current
85 mA
3/
PIN
Input Continuous Wave Power
23 dBm
PD
Power Dissipation
11.3 W
-1 TO +0.5 V
0
TCH
Operating Channel Temperature
150 C
TM
Mounting Temperature (30 Seconds)
320 0C
TSTG
Storage Temperature
2/ 4/
5/
-65 to 150 0C
1/
These ratings represent the maximum operable values for this device.
2/
Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
3/
Total current for the entire MMIC.
4/
When operated at this power dissipation with a base plate temperature of 60 0C, the median life is
1.0E+6 hrs.
5/
Junction operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
2
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
Advance Product Information
September 1, 2005
TGA2710
TABLE II
ELECTRICAL CHARACTERISTICS
(Ta = 25 0C Nominal)
PARAMETER
TYPICAL
TYPICAL
UNITS
Frequency Range
10.5 - 12
10.5 - 12
GHz
Drain Voltage, Vd
7
9
V
Drain Current, Id
1.4
1.05
A
Gate Voltage, Vg
-0.6
-0.65
V
Small Signal Gain, S21
19.5
18
dB
Input Return Loss, S11
12
12
dB
Output Return Loss, S22
12
12
dB
CW Saturated Output Power @ 19 dBm Pin
Pulsed Saturated Output Power @ 19 dBm Pin
& 25% Duty Cycle
CW Power Added Eff. @ 19 dBm Pin
36.5
38
dBm
36.7
38.5
dBm
40
39
%
Pulsed Power Added Eff. @ 19 dBm Pin & 25%
Duty Cycle
38
36
%
-0.03
-0.03
dB/0C
TCH
(OC)
TJC
(qC/W)
TM
(HRS)
Small Signal Gain Temperature Coefficient
TABLE III
THERMAL INFORMATION
PARAMETER
TEST CONDITIONS
θJC Thermal Resistance
(channel to Case)
Vd = 7 V
Id = 1.4 A
Pdiss = 9.8W
Small Signal
140
7.1
2.4E+6
θJC Thermal Resistance
(channel to Case)
Vd = 7 V
Id = 1.7 A @ Psat
Pdiss = 7.2 W
Pout = 4.8 W (RF)
121
7.1
1.4E+7
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70oC baseplate temperature.
.
3
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
Advance Product Information
September 1, 2005
TGA2710
Measured Data
24
23
22
Gain (dB)
21
20
19
18
17
16
7V, 1.4A
8V, 1.4A
9V, 1.05A
15
14
10.4
10.6
10.8
11
11.2
11.4
11.6
11.8
12
Frequency (GHz)
4
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
Advance Product Information
September 1, 2005
TGA2710
Measured Data
0
-2
Input Return Loss (dB)
-4
-6
-8
-10
-12
-14
-16
7V, 1.4A
-18
8V, 1.4A
9V, 1.05A
-20
10.4
10.6
10.8
11
11.2
11.4
11.6
11.8
12
Frequency (GHz)
0
-2
Output Return Loss (dB)
-4
-6
-8
-10
-12
-14
-16
7V, 1.4A
8V, 1.4A
-18
9V, 1.05A
-20
10.4
10.6
10.8
11
11.2
11.4
11.6
11.8
12
Frequency (GHz)
5
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
Advance Product Information
September 1, 2005
TGA2710
Measured Data
Pin = 19dBm, CW Power
40
CW Saturated Output Power (dBm)
39
38
37
36
35
34
33
32
7V, 1.4A
8V, 1.4A
31
9V, 1.05A
30
10.4
10.6
10.8
11
11.2
11.4
11.6
11.8
12
Frequency (GHz)
50
48
CW Power Added Eff. (%)
46
44
42
40
38
36
34
7V, 1.4A
8V, 1.4A
32
9V, 1.05A
30
10.4
10.6
10.8
11
11.2
11.4
11.6
11.8
12
Frequency (GHz)
6
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
Advance Product Information
September 1, 2005
TGA2710
Measured Data
Frequency @ 11GHz, CW Power
40
2.4
Vd = 7V, Id = 1.4A
2.3
36
2.2
34
2.1
32
2.0
Pout
30
1.9
28
1.8
26
1.7
Id
24
1.6
22
Id (A)
CW Pout (dBm) & Gain (dB)
38
1.5
20
1.4
Gain
18
1.3
16
1.2
Pout
Gain
14
1.1
Id
12
1.0
0
2
4
6
8
10
12
14
16
18
20
Pin (dBm)
40
2.4
2.3
Vd = 8V, Id = 1.4A
36
2.2
34
2.1
32
2.0
Pout
30
1.9
28
1.8
Id
26
1.7
24
1.6
22
1.5
20
1.4
Gain
18
16
1.3
1.2
Pout
Gain
14
Id (A)
CW Pout (dBm) & Gain (dB)
38
1.1
Id
12
1.0
0
2
4
6
8
10
12
14
16
18
20
Pin (dBm)
7
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
Advance Product Information
September 1, 2005
TGA2710
Measured Data
Frequency @ 11GHz, CW Power
40
2.4
2.3
Vd = 9V, Id = 1.05A
36
2.2
34
2.1
32
2.0
Pout
30
1.9
28
1.8
Id
26
1.7
24
1.6
22
1.5
20
Id (A)
CW Pout (dBm) & Gain (dB)
38
1.4
Gain
18
1.3
16
1.2
Pout
Gain
14
1.1
Id
12
1.0
0
2
4
6
8
10
12
14
16
18
20
Pin (dBm)
8
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
Advance Product Information
September 1, 2005
TGA2710
Measured Data
Pin = 19dBm, Pulsed Power, 25% DC
40
Pulsed Saturated Output Power (dBm)
39
38
37
36
35
34
33
32
7V, 1.4A
8V, 1.4A
9V, 1.05A
31
30
10.4
10.6
10.8
11
11.2
11.4
11.6
11.8
12
Frequency (GHz)
50
Pulsed Power Added Eff. (%)
48
46
44
42
40
38
36
34
7V, 1.4A
8V, 1.4A
32
9V, 1.05A
30
10.4
10.6
10.8
11
11.2
11.4
11.6
11.8
12
Frequency (GHz)
9
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
Advance Product Information
September 1, 2005
TGA2710
Measured Data
Frequency @ 11GHz, Pulsed Power, 25% DC
40
2.4
Vd = 7V, Id = 1.4A
2.3
36
2.2
34
2.1
32
2.0
Pout
30
1.9
28
1.8
26
1.7
24
1.6
Id
22
Id (A)
Pulsed Pout (dBm) & Gain (dB)
38
1.5
20
1.4
Gain
18
1.3
16
1.2
Pout
Gain
Id
14
1.1
12
1.0
0
2
4
6
8
10
12
14
16
18
20
Pin (dBm)
40
2.4
Vd = 8V, Id = 1.4A
2.3
36
2.2
34
2.1
32
2.0
Pout
30
1.9
28
1.8
26
1.7
Id
24
1.6
22
Id (A)
Pulsed Pout (dBm) & Gain (dB)
38
1.5
20
1.4
Gain
18
1.3
16
1.2
Pout
Gain
Id
14
1.1
12
1.0
0
2
4
6
8
10
12
14
16
18
20
Pin (dBm)
10
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
Advance Product Information
September 1, 2005
TGA2710
Measured Data
Frequency @ 11GHz, Pulsed Power, 25% DC
40
2.4
Vd = 9V, Id = 1.05A
2.3
36
2.2
34
2.1
32
2.0
Pout
30
1.9
28
1.8
Id
26
1.7
24
1.6
22
Id (A)
Pulsed Pout (dBm) & Gain (dB)
38
1.5
Gain
20
1.4
18
1.3
16
1.2
Pout
Gain
14
1.1
Id
12
1.0
0
2
4
6
8
10
12
14
16
18
20
Pin (dBm)
11
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
Advance Product Information
September 1, 2005
TGA2710
Measured Data
Frequency @ 11GHz, CW TOI
45
44
CW TOI @ 11GHz (dBm)
43
42
41
40
39
38
37
7V, 1.4A
8V, 1.4A
9V, 1.05A
36
35
15
16
17
18
19
20
21
22
23
24
25
26
27
28
Output Pow er/T one (dBm)
70
7V, 1.4A
8V, 1.4A
9V, 1.05A
65
CW IMR3 @ 11GHz (dBc)
60
55
50
45
40
35
30
25
20
15
16
17
18
19
20
21
22
23
24
25
26
27
28
Output Pow er/T one (dBm)
12
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
Advance Product Information
September 1, 2005
TGA2710
Mechanical Drawing
0.172 0.238
(0.007) (0.009)
2.610
(0.103)
2.476
(0.097)
0.300
(0.012)
0.133
(0.005)
0
2.717
(0.107)
3.411
(0.134)
2.491
(0.098)
4
2
3
2.310
(0.091)
1.305
(0.051)
0.614
(0.024)
1
5
8
0 0.238
(0.009)
7
0.119
(0.005)
6
2.717
(0.107)
0.614
(0.024)
1.305
(0.051)
3.524
(0.139)
Units: Millimeters (inches)
Thickness: 0.10 (0.004)
Chip edge to bond pad dimensions are shown to center of bond pad
Chip size tolerance: +/- 0.05 (0.002)
GND IS BACKSIDE OF MMIC
Bond pad # 1
Bond pad # 2, 8
Bond pad # 3, 7
Bond pad # 4, 6
Bond pad # 5
(RF Input)
(Vg)
(Vd1)
(Vd2)
(RF Output)
0.150 x 0.300
0.120 x 0.120
0.120 x 0.290
0.250 x 0.140
0.125 x 0.300
(0.006 x 0.012)
(0.005 x 0.005)
(0.005 x 0.011)
(0.010 x 0.006)
(0.005 x 0.012)
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
13
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
Advance Product Information
September 1, 2005
TGA2710
Recommended Chip Assembly Diagram
Vd
Vg
1000pF
1000pF
1000pF
RF Out
RF In
1000pF
1000pF
1000pF
Vd
Vg
Vd = 7 to 9 V
Vg = -0.6 V Typical
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
14
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
Advance Product Information
September 1, 2005
TGA2710
Assembly Process Notes
Reflow process assembly notes:
•
•
•
•
•
0
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C (30 seconds max).
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
•
•
•
•
•
•
•
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
•
•
•
•
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
0
Maximum stage temperature is 200 C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
15
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com