Advance Product Information December 9, 2004 19 - 38GHz Medium Power Amplifier TGA4036 Key Features • • • • • • • Frequency Range: 19 - 38 GHz 20 dB Nominal Gain 22 dBm Nominal Psat 30 dBm Nominal TOI Bias: 5 V, 160 mA (210mA @ P1dB) 0.25 um 3MI pHEMT Technology Chip Dimensions 1.69 x 0.75 x 0.10 mm (0.066 x 0.030 x 0.004 in) Product Description Primary Applications The TriQuint TGA4036 is a compact Medium Power Amplifier MMIC for Wide-band applications. The part is designed using TriQuint’s proven standard 0.25 um power pHEMT production process. • • • The TGA4036 provides a nominal 20 dB Gain from 19-36 GHz, with Saturated Output Power of 22 dBm. The TGA4036 is 100% DC and RF tested onwafer to ensure performance compliance. Evaluation boards are available. Measured Fixtured Data Bias Conditions: Vd = 5 V, Id = 160 mA 25 20 S-parameters (dB) The part is ideally suited for low cost emerging markets such as Point-to-Point Radio, Point-toMulti Point Communications, and Instrumentation. Point-to-Point Radio Point-to-Multipoint Communications Instrumentation GAIN 15 10 5 0 -5 ORL -10 -15 -20 -25 IRL 18 20 22 24 26 28 30 32 34 36 38 40 Frequency (GHz) 25 24 Power (dBm) 23 Psat 22 21 20 P1dB 19 18 17 16 15 18 20 22 24 26 28 30 32 34 36 38 40 Frequency (GHz) Note: Devices is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information December 9, 2004 TGA4036 TABLE I MAXIMUM RATINGS 1/ SYMBOL PARAMETER VALUE NOTES 7V 2/ Vd Drain Voltage Vg Gate Voltage Range Id Drain Current 400 mA 2/ 3/ Ig Gate Current 7 mA 3/ -1 TO +0.5 V PIN Input Continuous Wave Power 20 dBm PD Power Dissipation 1.54 W 0 TCH Operating Channel Temperature 150 C TM Mounting Temperature (30 Seconds) 320 0C TSTG 2/ 4/ 5/ 6/ -65 to 150 0C Storage Temperature 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. 3/ Total current for the entire MMIC. 4/ When operated at this bias condition with a base plate temperature of 700C, the median life is 1.0E+6 hrs. 5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 6/ These ratings apply to each individual FET. TABLE II DC PROBE TEST (TA = 25 qC r 5 qC) SYMBOL PARAMETER MINIMUM MAXIMUM UNIT Idss (Q1A) Saturated Drain Current 15 94 mA Gm (Q1A) Transconductance 33 106 mS Pinch-off Voltage -1.5 -0.5 V Breakdown Voltage Gate-Source -30 -8 V Breakdown Voltage Gate-Drain -30 -10 V Vp (Q1) BVGS (Q1A) BVGD (Q1A,Q1B) Q1A and Q1B are 150um Input FETs 2 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information December 9, 2004 TGA4036 TABLE III ELECTRICAL CHARACTERISTICS (Ta = 25 0C Nominal) PARAMETER TYPICAL UNITS Frequency Range 19 - 38 GHz Drain Voltage, Vd 5.0 V Drain Current, Id 160 mA Gate Voltage, Vg -0.6 V Small Signal Gain, S21 20 dB Input Return Loss, S11 11 dB Output Return Loss, S22 8 dB Output Power @ 1dB Gain compression, P1dB 21 dBm Saturated Output Power, Psat 22 dBm Output TOI @ Pin/tone = -10dBm 30 dBm 0.038 dB/0C Temperature Coefficient TABLE IV THERMAL INFORMATION PARAMETER θJC Thermal Resistance (channel to Case) TEST CONDITIONS Vd = 5 V Id = 160 mA Pdiss = 0.80 W TCH O ( C) RTJC (qC/W) TM (HRS) 112 51.9 3.4E+7 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo o Carrier at 70 C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. 3 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information December 9, 2004 TGA4036 Preliminary Measured Data Bias Conditions: Vd = 5 V, Idq = 160 mA 24 22 20 18 Gain (dB) 16 14 12 10 8 6 4 2 0 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 Frequency (GHz) 24 22 Gain Over Temperature (dB) 20 18 16 14 12 10 8 -40C -20C 0C 20C 40C 60C 80C 6 4 2 0 16 18 20 22 24 26 28 30 32 34 Frequency (GHz) 36 38 40 42 44 4 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information December 9, 2004 TGA4036 Preliminary Measured Data Bias Conditions: Vd = 5 V, Idq = 160 mA 0 -2 Input Return Loss (dB) -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 34 36 38 40 42 44 Frequency (GHz) 0 -2 Output Return Loss (dB) -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 16 18 20 22 24 26 28 30 32 Frequency (GHz) 5 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information December 9, 2004 TGA4036 Preliminary Measured Data Bias Conditions: Vd = 5 V, Idq = 160 mA 25 24 23 Psat Power (dBm) 22 21 P1dB 20 ‘ 19 18 17 16 15 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 Frequency (GHz) 24 260 22 Gain 20 240 18 230 16 220 Pout 14 210 Id 12 200 10 190 8 180 6 170 4 160 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 Id (mA) Power (dBm) & Gain (dB) 250 @ 29 GHz 8 Pin (dBm) 6 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information December 9, 2004 TGA4036 Preliminary Measured Data Bias Conditions: Vd = 5 V, Idq = 160 mA Output TOI @ Pin/tone = -10dBm (dBm) 40 35 30 25 20 15 10 5 0 16 18 20 22 24 26 28 30 32 34 36 38 40 14 15 42 Frequency (GHz) 60 50 IMD3 (dBc) 40 30 20 19GHz 25GHz 30GHz 36Ghz 10 0 4 5 6 7 8 9 10 11 12 13 16 Ouput Power/Tone (dBm) 7 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information December 9, 2004 TGA4036 Mechanical Drawing 0.593 (0.023) 0.085 (0.003) 1.328 (0.052) 0.750 (0.030) 0.445 (0.018) 1 0.085 (0.003) 0 4 0.389 (0.015) 5 6 0 0.665 (0.026) 3 2 0.299 (0.011) 1.065 (0.042) 1.603 1.688 (0.063) (0.066) Units: Millimeters (inches) Thickness: 0.100 (0.004) (Reference Only) Cip edge to bond pad dimensions are shown to center of bond pad Chip size tolerance: +/- 0.051 (0.002) RF Ground is backside of MMIC Bond pad #1: Bond pad #2, #3: Bond pad #4: Bond pad #5, #6: (RF In) (Vd) (RF Out) (Vg) 0.080 x 0.150 0.080 x 0.080 0.080 x 0.150 0.080 x 0.080 (0.003 x 0.006) (0.003 x 0.003) (0.003 x 0.006) (0.003 x 0.003) GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 8 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information December 9, 2004 TGA4036 Recommended Chip Assembly Diagram Vd = 5V RF IN RF OUT Ribbon Ribbon Vg~-0.6V Adjust Vg to get Id = 160mA GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 9 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information December 9, 2004 TGA4036 Assembly Process Notes Reflow process assembly notes: • • • • • 0 Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: • • • • • • • Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: • • • • Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. 0 Maximum stage temperature is 200 C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 10 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com