Advance Product Information January 18, 2005 50 GHz Wideband Analog Attenuator TGL4203-EPU Key Features and Performance • • • • • • 0.25um 3MI MMW pHEMT Broadband Response DC to > 50 GHz 2dB typical Insertion Loss 17dB Variable Attenuation Range 15dB typical Return Loss Bias: -1V to 0V Primary Applications Chip Dimensions 1.7mm x 0.8 mm x 0.1mm • Point to Point Radio • Fiber Optic • Wideband Military & Space 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 A tte n u a tio n (d B ) In s e r tio n L o s s (d B ) Typical Electrical Characteristics 0 20 18 16 14 12 10 8 6 4 2 0 5 10 15 20 25 30 35 40 45 50 V1 / V2 0 5 10 15 20 25 30 35 40 45 50 0 -3 -6 -9 -12 -15 -18 -21 -24 -27 -30 Frequency (GHz) G r o u p D e la y (p s e c ) R e tu rn L o ss S 1 1 (d B ) Frequency (GHz) 0 5 10 15 20 25 30 35 40 45 50 Frequency (GHz) 40 35 30 25 20 15 10 5 0 0 5 REF 0.000 / -1.000 1dB -0.549 / -0.838 2dB -0.606 / -0.752 3dB -0.635 / -0.708 4dB -0.659 / -0.680 5dB -0.673 / -0.651 6dB -0.679 / -0.626 7dB -0.689 / -0.597 8dB -0.705 / -0.578 9dB -0.713 / -0.549 10dB -0.719 / -0.518 11dB -0.730 / -0.489 12dB -0.744 / -0.461 13dB -0.762 / -0.430 14dB -0.794 / -0.392 15dB -0.800 / -0.327 16dB -0.851 / -0.267 17dB -0.900 / -0.203 Bias Voltages Optimized for Flatness of Attenuation with respect 10 15 20 25 30 35 40 45 50 to Reference over Frequency Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 1 Advance Product Information January 18, 2005 TGL4203-EPU TABLE I MAXIMUM RATINGS 1/ SYMBOL PARAMETER VALUE Attenuation Control Voltage Range NOTES -5 to +1 V | IG1 | Gate 1 Supply Current 2.2 mA | IG2 | Gate 2 Supply Current 19.8 mA PIN Input Continuous Wave Power > 30dBm PD Power Dissipation TCH Operating Channel Temperature TM TSTG TBD 0 150 C 2/ 3/ 0 Mounting Temperature (30 Seconds) 320 C 0 Storage Temperature -65 to 150 C 1/ These ratings represent the maximum operable values for this device. 2/ Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 3/ These ratings apply to each individual FET. TABLE II ELECTRICAL CHARACTERISTICS (Ta = 25oC Nominal) PARAMETER TEST CONDITIONS TYP UNIT Attenuation Control Voltage DC ~ 50 GHz -1 to 0 V Insertion Loss DC ~ 50 GHz 2 dB Maximum Attenuation DC ~ 50 GHz 17 dB IRL Input Return Loss DC ~ 50 GHz 15 dB ORL Output Return Loss DC ~ 50 GHz 15 dB Pin1dB Input Power @ 1dB Atten. Change Group Delay Variation 5 to 25 GHz * dBm DC ~ 50 GHz +/-5 psec DC ~ 50 GHz 0.5 dB IL Max. Insertion Loss Ripple (peak to peak) * Pin1dB varies depending on Attenuation State and frequency. See graphs on page 3 for details Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 2 Advance Product Information January 18, 2005 TGL4203-EPU Typical Pin1dB vs Attenuation Ta = 250C Nominal Input Power @ 1dB Attenuation Change (dBm) 30 27 24 21 18 15 5 GHz 12 10 GHz 15 GHz 9 20 GHz 25 GHz 6 3 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Attenuation (dB) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 3 Advance Product Information January 18, 2005 TGL4203-EPU Typical Attenuator Input TOI vs. Attenuation 35 Pin = 0dBm 30 IIP3 (dBm) 25 20 15 0dB 3dB 6dB 10dB 17dB 10 5 0 0 5 10 15 20 25 30 35 40 45 50 Frequency (GHz) 35 Freq = 10GHz 30 IIP3 (dBm) 25 20 15 0dB 3dB 6dB 10dB 17dB 10 5 0 -10 -8 -6 -4 -2 0 2 4 6 8 10 Pin/tone (dBm) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 4 Advance Product Information January 18, 2005 TGL4203-EPU Typical Attenuator Input TOI vs. Attenuation 35 Freq = 20GHz 30 IIP3 (dBm) 25 20 15 0dB 3dB 6dB 10dB 17dB 10 5 0 -10 -8 -6 -4 -2 0 2 4 6 8 10 Pin/tone (dBm) 35 Freq = 30GHz 30 IIP3 (dBm) 25 20 15 0dB 3dB 6dB 10dB 17dB 10 5 0 -10 -8 -6 -4 -2 0 2 4 6 8 10 Pin/tone (dBm) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 5 Advance Product Information January 18, 2005 TGL4203-EPU Typical Measurement Over Temperature In p u t R e tu rn L o s s (d B ) A tte n u a tio n (d B ) 20 15 10 5 0 -5 0 5 10 15 20 25 30 35 40 45 50 Frequency (GHz) 0 -10 -20 -30 -40 -50 0 5 10 15 20 25 30 35 40 45 50 Frequency (GHz) G ro u p D e la y (p s e c ) 35 30 25 5 deg C 25 deg C 75 deg C 20 15 10 5 0 0 5 10 15 20 25 30 35 40 45 50 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 6 Advance Product Information January 18, 2005 TGL4203-EPU Mechanical Drawing GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 7 Advance Product Information January 18, 2005 TGL4203-EPU DC Schematic R1 R1 RFin RFout Q1 R4 R4 R4 Q2 Q2 R4 Q2 R4 Q2 R4 C1 R4 R4 R4 R4 R4 R4 R4 R4 R4 R4 Q2 R4 R4 R4 R4 R4 Q2 R4 Q2 Q2 R4 Q2 R4 Q2 Q2 Q2 Q2 R4 R4 Q2 Q2 Q2 Q2 Q2 R4 R4 Q1 R4 Q2 Q2 Q2 Q2 R4 Q2 Q2 Q2 R4 Q2 R4 Q2 Q2 Q2 Q2 R2 R3 R1 = 40 Ohms R3 = 400 Ohms R4 = 3k Ohms C1 = 1 pF C1 V1 R3 V2 V1 controls series FETs Q1 V2 controls shunt FETs Q2 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 8 Advance Product Information January 18, 2005 TGL4203-EPU Chip Assembly Diagram RF Ports must be DC Blocked GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 9 Advance Product Information January 18, 2005 TGL4203-EPU Assembly Process Notes Reflow process assembly notes: • • • • • Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: • • • • • • • Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: • • • • • Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200 C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 10