TOSHIBA TPCS8008-H

TPCS8008-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHⅡπ-MOSⅤ)
TPCS8008-H
High-Speed Switching Applications
Switching Regulator Applications
DC/DC Converter Applications
Unit: mm
•
Low drain-source ON-resistance: RDS (ON) = 0.48 Ω (typ.)
•
High forward transfer admittance: |Yfs| = 1.8 S (typ.)
•
Low leakage current: IDSS = 100 μA (max) (VDS = 250 V)
•
Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
1.2.3.
Source
4
Gate
5.6.7.8 Drain
Symbol
Rating
Unit
Drain-source voltage
VDSS
250
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
250
V
Gate-source voltage
VGSS
±20
V
(Note 1)
ID
1.7
Pulse (Note 1)
IDP
6.8
Drain power dissipation (t = 10 s)
(Note 2a)
PD
1.5
Drain power dissipation (t = 10 s)
(Note 2b)
PD
0.6
Single-pulse avalanche energy(Note3)
EAS
1.7
mJ
Avalanche current
IAR
1.7
A
Repetitive avalanche energy
(Note2a, Note 4)
EAR
0.15
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Drain current
DC
JEDEC
―
JEITA
―
TOSHIBA
2-3R1F
Weight: 0.036 g (typ.)
A
Circuit Configuration
W
Note: For Notes 1 to 4, refer to the next page.
8
7
6
5
1
2
3
4
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
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TPCS8008-H
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2a)
Rth (ch-a)
83.3
°C/W
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2b)
Rth (ch-a)
208
°C/W
Marking (Note 5)
Part No. (or abbreviation code)
S8008
*
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Note 1: The channel temperature should not exceed 150°C during use.
Note 2:
a)
Device mounted on a glass-epoxy board (a)
b)
Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
(a)
(b)
Note 3: VDD = 50 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = 1.7 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: ○ on the lower right of the marking indicates Pin 1.
* Weekly code: (Three digits)
Week of manufacture
(01 for first week of year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
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TPCS8008-H
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
⎯
⎯
±10
μA
Drain cutoff current
IDSS
VDS = 150 V, VGS = 0 V
⎯
⎯
100
μA
V (BR) DSS
ID = 10 mA, VGS = 0 V
250
⎯
⎯
V (BR) DSX
ID = 10 mA, VGS = −5 V
250
⎯
⎯
V (BR) DSX
ID = 10 mA, VGS = −20 V
200
⎯
⎯
Vth
VDS = 10 V, ID = 1 mA
2.0
⎯
4.0
V
Drain-source ON-resistance
RDS (ON)
VGS = 10 V, ID = 0.8 A
⎯
0.48
0.58
Ω
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 0.8 A
0.8
1.8
⎯
S
Input capacitance
Ciss
⎯
600
⎯
pF
Reverse transfer capacitance
Crss
⎯
20
⎯
pF
Output capacitance
Coss
⎯
220
⎯
pF
⎯
35
⎯
⎯
95
⎯
Gate threshold voltage
Rise time
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
VGS
Turn-on time
ton
Fall time
tf
Turn-off time
toff
Total gate charge
(gate-source plus gate-drain)
Qg
Gate-source charge
Qgs
Gate-drain (“Miller”) charge
Qgd
Gate switch charge
Qsw
0V
4.7 Ω
Switching time
ID = 0.8 A
VOUT
10 V
RL = 156 Ω
Drain-source breakdown voltage
V
ns
⎯
20
⎯
⎯
120
⎯
⎯
10
⎯
nC
⎯
7.5
⎯
nC
⎯
2.5
⎯
nC
⎯
3.3
⎯
nC
VDD ∼
− 125 V
Duty <
= 1%, tw = 10 μs
VDD ∼
− 200V, VGS = 10 V,
ID = 1.7 A
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Drain reverse current (pulse)
Forward voltage (diode)
(Note 1)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDRP
⎯
⎯
⎯
6.8
A
⎯
⎯
−2.0
V
VDSF
IDR = 1.7 A, VGS = 0 V
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TPCS8008-H
ID – VDS
6
4
4.8
5.5
ID
5.2
2
Drain current
4.6
4.4
1
4.2
VGS = 4 V
0
0
0.4
0.8
1.2
Drain-source voltage
Common source
Ta = 25°C
Pulse test
5
8
(A)
ID
Drain current
ID – VDS
5
10
Common source
Ta = 25°C
Pulse test
1.6
VDS
4.8
2
4.6
4.4
1
4.2
VGS = 4 V
0
1
(V)
2
(V)
(V)
Common source
Ta = 25°C
Pulse test
1.6
VDS
3
25
Drain-source voltage
(A)
VDS
5
VDS – VGS
Common source
ID
Drain current
4
2.0
2
Ta = −55°C
100
1
0
2
4
6
Gate-source voltage
8
VGS
100
1
Drain current
10
ID
0
4
8
12
16
VGS
20
(V)
RDS (ON) − ID
25
1
0.4
10
10
0.1
0.1
0.8
0.4
Gate-source voltage
Common source
VDS = 10 V
Pulse test
Ta = −55°C
ID = 1.7 A
0.8
(V)
Drain-source ON-resistance
RDS (ON) (Ω)
|Yfs|
100
1.2
0
10
⎪Yfs⎪ − ID
(S)
3
Drain-source voltage
Pulse test
Forward transfer admittance
5.2
5
0
2.0
VDS = 10 V
0
5.5
6
3
ID – VGS
4
10
8
(A)
3
Common source
Ta = 25°C
Pulse test
1
VGS = 10 V
0.1
0.1
100
(A)
Drain current
4
10
1
ID
(A)
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TPCS8008-H
RDS (ON) − Ta
1.6
IDR − VDS
10
Common source
Common source
Ta = 25°C
Pulse test
(A)
Pulse test
IDR
1.2
0.8
ID = 1.7 A
Drain reverse current
Drain-source ON-resistance
RDS (ON) (Ω)
VGS = 10 V
0.8
0.4
0.4
0
−80
−40
0
40
80
Ambient temperature
Ta
10
5
3
−0.2
0
(°C)
−0.4
4
Vth (V)
Ciss
100
Coss
Gate threshold voltage
(pF)
−0.8
VDS
−1.0
(V)
Vth − Ta
C
Capacitance
−0.6
Drain-source voltage
Capacitance – VDS
1000
10
VGS = 0 V
1
0.1
160
120
1
Crss
Common source
VGS = 0 V
f = 1 MHz
Common source
VDS = 10 V
ID = 1mA
Pulse test
3
2
1
Ta = 25°C
10
VDS
−40
(V)
300
1.2
VDS
Drain-source voltage
(1)
(V)
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
ｔ＝10s
(W)
PD
Drain power dissipation
1.6
0.8
(2)
0.4
0
0
40
80
120
Ambient temperature
40
80
120
Ta
160
(°C)
Dynamic input/output
characteristics
PD – Ta
2.0
0
Ambient temperature
160
Ta
200
VDS
16
100
50
8
VGS
5
Total gate charge
(°C)
5
VDS = 200 V
100
0
0
200
24
Common source
ID = 1.7 A
Ta = 25°C
Pulse test
(V)
Drain-source voltage
0
−80
100
0
15
10
Qg
VGS
1
Gate-source voltage
1
0.1
(nC)
2006-11-21
TPCS8008-H
rth − tw
500
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
Transient thermal impedance
rth (°C/W)
100
(1)
10
1
Single - pulse
0.1
0.001
0.01
0.1
1
Pulse width
10
tw
100
1000
(s)
Safe operating area
10
ID max (pulse) *
Drain current
ID
(A)
100
t =1 ms *
10 ms *
1
*Single - pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
0.1
1
VDSS max
10
Drain-source voltage
100
VDS
1000
(V)
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TPCS8008-H
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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