STMICROELECTRONICS STE110NS20FD_06

STE110NS20FD
N-channel 200V - 0.022Ω - 110A - ISOTOP
MESH OVERLAY™ Power MOSFET
General features
Type
VDSS
RDS(on)
ID
STE110NS20FD
200V
<0.024Ω
110A
■
Extremely high dv/dt capability
■
100% avalanche tested
■
Gate charge minimized
■
± 20V gate to source voltage rating
■
Low intrinsic capacitance
■
Fast body-drain diode:low trr, Qrr
Description
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of Power MOSFETs with
outstanding performances. The new patented
STrip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(ON) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
ISOTOP
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number
Marking
Package
Packaging
STE110NS20FD
E110NS20FD
ISOTOP
Tube
May 2006
Rev 3
1/12
www.st.com
12
Contents
STE110NS20FD
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
................................................ 8
STE110NS20FD
1
Electrical ratings
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Value
Unit
Drain-source voltage (VGS = 0)
200
V
Drain-gate voltage (RGS = 20 kΩ)
200
V
Gate- source voltage
±20
V
ID
Drain current (continuos) at TC = 25°C
110
A
ID
Drain current (continuos) at TC = 100°C
69
A
Drain current (pulsed)
440
A
Total dissipation at TC = 25°C
500
W
Derating factor
4
W/°C
Peak diode recovery voltage slope
25
V/ns
2500
V
–65 to 150
°C
150
°C
Value
Unit
0.25
°C/W
30
°C/W
300
°C
Value
Unit
VDS
VDGR
VGS
IDM
(1)
PTOT
dv/dt
(2)
Parameter
VISO
Insulation winthstand voltage (AC-RMS)
Tstg
Storage temperature
Tj
Max. operating junction temperature
1. Pulse width limited by safe operating area
2. ISD <110A, di/dt < 200A/µs, VDD = 80% V(BR)DSS
Table 2.
Symbol
Thermal resistance
Parameter
Rthj-case Thermal resistance junction-case Max
Rthj-amb Thermal resistance junction-ambient Max
Tl
Table 3.
Symbol
Maximum lead temperature for soldering
purpose
Avalanche data
Parameter
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
110
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50V)
750
mJ
3/12
Electrical characteristics
2
STE110NS20FD
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
Symbol
On/off states
Parameter
Test condictions
Typ.
Max.
Unit
Drain-source breakdown
voltage
ID = 250µA, VGS = 0
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating
VDS = Max rating, @125°C
10
100
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ± 20V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250µA
3
4
V
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 50A
0.022
0.024
Ω
Typ.
Max.
Unit
V(BR)DSS
Table 5.
Symbol
gfs (1)
Ciss
Coss
Crss
Qg
Qgs
Qgd
200
2
V
Dynamic
Parameter
Test condictions
Forward transconductance
VDS > ID(on) x RDS(on)max,
ID = 50A
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 100V, ID = 100A,
VGS = 10V
(see Figure 13)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
4/12
Min.
Min.
30
S
7900
1500
460
pF
pF
pF
360
35
135
504
nC
nC
nC
STE110NS20FD
Electrical characteristics
Table 6.
Switching times
Symbol
Parameter
td(on)
tr
tr(Voff)
tf
tc
Table 7.
Symbol
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
Cross-over time
Test condictions
Min.
VDD = 100V, ID = 50A
RG = 4.7Ω VGS = 10V
(see Figure 12)
VDD = 100V, ID = 100A,
RG = 4.7Ω, VGS = 10V
(see Figure 12)
Typ.
Max. Unit
40
130
ns
ns
245
140
220
ns
ns
ns
Source drain diode
Max
Unit
Source-drain current
110
A
ISDM(1)
Source-drain current (pulsed)
440
A
VSD(2)
Forward on voltage
ISD = 100A, VGS = 0
1.6
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=100A, Tj=150°C
ISD
trr
Qrr
IRRM
Parameter
Test condictions
di/dt = 100A/µs,
VDD=160V, (see Figure 17)
Min
Typ.
225
1.35
12
ns
µC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
5/12
Electrical characteristics
STE110NS20FD
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Thermal impedance
Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
Figure 5.
Transconductance
Figure 6.
Static drain-source on resistance
6/12
STE110NS20FD
Electrical characteristics
Figure 7.
Gate charge vs gate-source voltage Figure 8.
Figure 9.
Normalized gate threshold voltage
vs temperature
Capacitance variations
Figure 10. Normalized on resistance vs
temperature
Figure 11. Source-drain diode forward
characteristics
7/12
Test circuit
3
STE110NS20FD
Test circuit
Figure 12. Switching times test circuit for
resistive load
Figure 13. Gate charge test circuit
Figure 14. Test circuit for inductive load
Figure 15. Unclamped inductive load test
switching and diode recovery times
circuit
Figure 16. Unclamped inductive waveform
8/12
Figure 17. Switching time waveform
STE110NS20FD
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at : www.st.com
9/12
Package mechanical data
STE110NS20FD
ISOTOP MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
A
11.8
12.2
0.466
TYP.
MAX.
0.480
B
8.9
9.1
0.350
0.358
C
1.95
2.05
0.076
0.080
D
0.75
0.85
0.029
0.033
E
12.6
12.8
0.496
0.503
F
25.15
25.5
0.990
1.003
G
31.5
31.7
1.240
1.248
H
4
J
4.1
4.3
0.161
0.157
0.169
K
14.9
15.1
0.586
0.594
L
30.1
30.3
1.185
1.193
M
37.8
38.2
1.488
1.503
N
4
O
7.8
0.157
8.2
0.307
0.322
A
G
B
O
H
J
K
L
M
10/12
C
F
E
D
N
STE110NS20FD
5
Revision history
Revision history
Table 8.
Revision history
Date
Revision
12-May-2006
3
Changes
New template
11/12
STE110NS20FD
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