STB20NM60D N-channel 600V - 0.26Ω - 20A - D2PAK FDmesh™ Power MOSFET General features Type VDSS RDS(on) ID Pw STB20NM60D 600V <0.29Ω 20A 45W ■ High dv/dt and avalanche capabilities ■ 100% Avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Tight process control and high manufacturing yields 3 1 D²PAK Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STB20NM60D B20NM60D D²PAK Tape & reel June 2006 Rev 1 1/13 www.st.com 13 Contents STB20NM60D Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 ................................................ 8 STB20NM60D 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol VDS VDGR VGS Parameter Value Unit Drain-source voltage (VGS = 0) 600 V Drain-gate voltage (RGS = 20 kΩ) 600 V Gate- source voltage ± 30 V ID Drain current (continuous) at TC = 25°C 20 A ID Drain current (continuous) at TC = 100°C 12.6 A Drain current (pulsed) 80 A Total dissipation at TC = 25°C 192 W Derating factor 1.20 W/°C 20 V/ns – 65 to 150 °C °C Value Unit Rthj-case Thermal resistance junction-case Max 0.65 °C/W Rthj-amb Thermal resistance junction-ambient Max 62.5 °C/W 300 °C Value Unit IDM (1) PTOT dv/dt (2) Tj Tstg Peak diode recovery voltage slope Operating junction temperature Storage temperature 1. Pulse width limited by safe operating area 2. ISD < 20A, di/dt < 400A/µs, VDD = 80%V(BR)DSS Table 2. Symbol Tl Table 3. Symbol Thermal resistance Parameter Maximum lead temperature for soldering purpose Avalanche data Parameter IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 10 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 35 V) 700 mJ 3/13 Electrical characteristics 2 STB20NM60D Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol On/off states Parameter Test condictions Min Typ Max Unit Drain-source breakdown voltage ID = 250µA, VGS = 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, TC = 125 °C 1 10 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ±30V ±10 0 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA 5 V RDS(on) Static drain-source on resistance VGS = 10V, ID = 10A V(BR)DSS Table 5. Symbol 600 3 V 4 0.26 0.29 Dynamic Parameter Test condictions gfs (1) Forward transconductance VDS > ID(on) x RDS(on)max, ID = 10A Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance Coss eq. (2) Equivalent output capacitance Min Typ Max Unit 9 S VDS = 25V, f = 1 MHz, VGS = 0 1300 500 35 pF pF pF VGS = 0V, VDS = 0V to 480V 190 pF Ω RG Gate input resistance f=1 MHz Gate DC Bias = 0 Test signal level = 20mV open drain 2.7 Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 480V, ID = 20A, VGS = 10V (see Figure 13) 37 10 17 52 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% 4/13 Ω nC nC nC STB20NM60D Electrical characteristics Table 6. Symbol Switching times Parameter Test condictions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD = 300V, ID = 10A RG = 4.7Ω VGS = 10V (see Figure 12) 25 12 ns ns tr(Voff) tf tc Off-voltage rise time Fall time Cross-over time VDD = 480 V, ID = 20A, RG = 4.7Ω, VGS = 10V (see Figure 12) 8 22 30 ns ns ns Table 7. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Test condictions Min Typ. Source-drain current Source-drain current (pulsed) Max Unit 20 80 A A 1.5 V Forward on voltage ISD = 20 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 20 A, Tj = 25°C di/dt =100A/µs,VDD=60V (see Figure 17) 240 1800 16 ns nC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 20 A, Tj = 150°C di/dt =100A/µs,VDD=60V (see Figure 17) 396 2960 20 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 5/13 Electrical characteristics STB20NM60D 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/13 STB20NM60D Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics 7/13 Test circuit 3 STB20NM60D Test circuit Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load Figure 15. Unclamped inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform 8/13 Figure 17. Switching time waveform STB20NM60D 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/13 Package mechanical data STB20NM60D D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MAX. MIN. A MIN. 4.4 TYP 4.6 0.173 TYP. 0.181 MAX. A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 D1 E 8 10 10.4 0.393 4.88 5.28 0.192 0.208 E1 G 0.368 0.315 8.5 0.334 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.4 0º 0.015 4º 3 V2 1 10/13 STB20NM60D 5 Packaging mechanical data Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 11/13 Revision history 6 STB20NM60D Revision history Table 8. 12/13 Revision history Date Revision 08-Jun-2006 1 Changes First release STB20NM60D Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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