MITSUBISHI SEMICONDUCTORS <HVIC> M63975FP IGBT MOSFET DRIVER DESCRIPTION M63975FP is Power MOSFET and IGBT module driver for half bridge applications. PIN CONFIGURATION (TOP VIEW) FEATURES 10 VCC 2 9 OUT FO 3 8 GS CFO 4 7 GND GND 5 6 CIN IN 1 ¡SUPPLY VOLTAGE ...................................................... 24V ¡OUTPUT CURRENT ............................................. ±600mA ¡LOW SIDE DRIVER ¡SOP-10 ¡BUILT-IN SOFT STOP FACILITY FOIN APPLICATION MOSFET and IGBT module inverter driver NC:NO INTERNAL CONNECTION Outline 10P2N BLOCK DIAGRAM 10 VCC IN 1 9 OUT 8 GS 7 GND 6 CIN R Q DQ FOIN 2 S T S DELAY FO 3 UV DETECT FILTER + R Q – S + CFO 4 – VREG GND 5 Mar. 2003 MITSUBISHI SEMICONDUCTORS <HVIC> M63975FP IGBT MOSFET DRIVER ABSOLUTE MAXIMUM RATINGS Symbol VCC VOUT IOUT VGS IGS VIN VFIN VCIN VFO IFO PD Kq Tj Topr Tstg Parameter Fixed Supply Voltage Conditions Output Voltage 1 Output Current 1 Output Voltage 2 Output Current 2 Input Voltage FOIN Input Voltage CIN Input Voltage FO Output Voltage FO Output Current Package Power Dissipation Linear Derating Factor Junction Temperature Operation Temperature Storage Temperature Ratings –0.5 ~ 24 –0.5 ~ VCC+0.5 Unit V V mA ±600 –0.5 ~ VCC+0.5 375 –0.5 ~ VCC+0.5 –0.5 ~ VCC+0.5 –0.5 ~ VCC+0.5 V mA V V 15 0.43 V V mA W –4.31 –20 ~ 125 –20 ~ 75 –40 ~ 125 mW/°C °C °C °C –0.5 ~ VCC+0.5 Ta = 25°C, Non Board Ta > 25°C, Non Board RECOMMENDED OPERATING CONDITIONS Symbol VCC VIN Parameter Test conditions Min. 13.5 0 Fixed Supply Voltage Input Voltage Limits Typ. — — Max. 16.5 5 Unit V V THERMAL DERATING FACTOR CHARACTERISTIC Package Power Dissipation PD (W) 1.5 1.0 Non Board 0.5 0.43 0.0 0 25 50 75 100 125 Temperature (°C) Mar. 2003 MITSUBISHI SEMICONDUCTORS <HVIC> M63975FP IGBT MOSFET DRIVER ELECTRICAL CHARACTERISTICS (Ta=25°C, VCC=15V, GND=0V unless otherwise specified) Symbol Parameter Test conditions Limits Typ.* 2.0 Max. 3.5 Unit ICC VCC Standby Current VIN=VCC Min. 1.0 VIH High Level Input Threshold Voltage VIL: Low Level Input Threshold Voltage 2.5 3.0 4.0 VINh Input Hysteresis Voltage VINh=VIH–VIL 0.5 1.6 3.2 V IIH IIL High Level Input Bias Current Low Level Input Bias Current VIN=VCC VIN=0V –0.1 — 50 — 100 200 µA µA VCCuvr VCC Supply UV Reset Voltage VCCuvt: VCC Supply UV Trip Voltage 11.2 12.0 12.8 V VCCuvh VCC Supply UV Hysteresis Voltage VCCuvh=VCCuvr–VCCuvt — 0.5 — V tVCCuv VFIH VCC Supply UV Filter Time FOIN High Level Input Threshold Voltage VFIL: Low Level Input Threshold Voltage — 2.5 10.0 3.0 — 4.0 µs V VFIh FOIN Input Hysteresis Voltage VFIh=VFIH–VFIL 0.5 1.6 3.2 V IFIH FOIN High Level Input Bias Current VFIN=VCC –0.1 — — µA IFIL FOIN Low Level Input Bias Current VFIN=0V VCIN tCIN CIN Input Threshold Voltage CIN Propagation Delay VCFH CFO Threshold Voltage ICFO CFO Source Current IFO FO Leak Current VFO=VCC VFO FO Output Saturation Voltage VOH High Level Output Voltage IFO=15mA IO=0mA VOL Low Level Output Voltage IO=0mA ROH Output High Level On Resistance ROL tdLH mA V 50 100 200 µA 0.40 — 0.50 0.5 0.60 0.8 µs V 2.6 3.0 3.4 V –40.0 –25.0 –15.0 µA — — 1.0 µA 0.7 13.3 1.2 V 14.0 2.0 — — — 0.1 V IO=–200mA, ROH=(VOH–VO)/IO 26.3 35.7 71.4 Ω Output Low Level On Resistance Turn-On Propagation Delay IO=200mA, ROH=VO/IO OUT–GND 13.0 19.0 300 28 — 900 Ω ns tdHL Turn-Off Propagation Delay OUT–GND VOth GSOUT Threshold Voltage VGS GS Output Saturation Voltage ISO tSO OUT Soft Cut-Off Sink Current OUT Soft Cut-Off Delay VCFO=0V V — 300 900 ns 1.5 2.5 3.8 V IGS=100mA 0.7 1.6 2.5 V VCIN=1V, VO=VCC — 2.0 20 — 5.5 9.0 mA µs * Typ. is not specified. Mar. 2003 MITSUBISHI SEMICONDUCTORS <HVIC> M63975FP IGBT MOSFET DRIVER TIMING DIAGRAM 1. SC IN 20mA sink OUT CIN VSCt Protection Status RESET VCFO CFO FO 2. UV IN OUT VCCuvt VCC VCCuvr tVCCuv Protection Status RESET VCFO CFO FO 3. FOIN IN OUT FOIN Protection Status FO RESET H Mar. 2003 MITSUBISHI SEMICONDUCTORS <HVIC> M63975FP IGBT MOSFET DRIVER PACKAGE OUTLINE 10P2N-A Plastic 10pin 300mil SOP EIAJ Package Code SOP010-P-300-1.27 Weight(g) 0.16 JEDEC Code – Lead Material Cu Alloy e b2 6 E Recommended Mount Pad Symbol F 1 5 A D G A2 b e x A1 M y L L1 HE e1 I2 10 c A A1 A2 b c D E e HE L L1 z Z1 x y z Z1 Detail G Detail F b2 e1 I2 Dimension in Millimeters Min Nom Max 2.1 – – 0.2 0.1 0 – 1.8 – 0.5 0.4 0.35 0.25 0.2 0.18 6.9 6.8 6.7 5.8 5.7 5.6 – 1.27 – 8.42 8.12 7.82 0.7 0.5 0.3 – 1.21 – – 0.86 – – – 1.01 – – 0.25 0.1 – – 0° – 8° – 0.76 – – 7.62 – – 1.27 – Mar. 2003