MITSUBISHI SEMICONDUCTORS <HVIC> M81725FP HIGH VOLTAGE HIGH SIDE DRIVER DESCRIPTION M81725FP is high voltage Power MOSFET and IGBT driver for high side applications. PIN CONFIGURATION (TOP VIEW) FEATURES ¡FLOATING SUPPLY VOLTAGE ................................. 600V ¡OUTPUT CURRENT ............................................ ±3A (typ) ¡UNDERVOLTAGE LOCKOUT ¡INPUT FILTER ¡SOP-8 PACKAGE 1. VCC 8. VB 2. IN 7. OUT 3. NC 6. VS 4. GND 5. NC APPLICATIONS MOSFET and IGBT driver for PDP,HID lamp, refrigerator, air-conditioner, washing machine, AC-servomotor and general purpose. Outline:8P2S NC: NO CONNECTION BLOCK DIAGRAM VCC 1 VREG HV LEVEL SHIFT UV DETECT FILTER 8 VB 7 OUT 6 VS POR R Q INTER LOCK IN GND 2 VREG/VCC LEVEL SHIFT FILTER R S PULSE GEN 4 Aug. 2009 1 MITSUBISHI SEMICONDUCTORS <HVIC> M81725FP HIGH VOLTAGE HIGH SIDE DRIVER ABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise specified) Symbol VB Parameter High Side Floating Supply Absolute Voltage Test conditions VS High Side Floating Supply Offset Voltage VBS High Side Floating Supply Voltage VOUT High Side Output Voltage VCC Low Side Fixed Supply Voltage VIN Logic Input Voltage IN Pd Package Power Dissipation Kq Linear Derating Factor Rth(j-c) Junction - Case Thermal Resistance Tj VBS = VB-VS Ratings –0.5 ~ 624 Unit V VB-24 ~ VB+0.5 V –0.5 ~ 24 V VS–0.5 ~ VB+0.5 V –0.5 ~ 24 V –0.5 ~ VCC+0.5 V Ta = 25°C , On Board 0.6 W Ta > 25°C , On Board 4.8 mW/°C 50 °C/W Junction Temperature –20 ~ 150* °C Topr Operation Temperature –20 ~ 125 °C Tstg Storage Temperature –40 ~ 150 °C TL Solder heat-proof(flow) 260(10s) °C For Pb Free * Please adjust the VS potential to 500V or less when the junction temperature (Tj) exceeds 125°C. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Test conditions Min. Limits Typ. Max. Unit VB High Side Floating Supply Absolute Voltage VS+10 — VS+20 V VS High Side Floating Supply Offset Voltage VB > 10V –5 — 500 V VBS High Side Floating Supply Voltage VBS = VB–VS 10 — 20 V VOUT High Side Output Voltage VS — VB V VCC Low Side Fixed Supply Voltage 10 — 20 V VIN Logic Input Voltage 0 — 7 V IN * For proper operation, the device should be used within the recommended conditions. THERMAL DERATING FACTOR CHARACTERISTIC (ABSOLUTE MAXIMUM RATINGS) 0.7 Power dissipation Pd (W) 0.6 0.5 0.4 0.3 0.2 0.1 0 0 25 50 75 100 125 150 Ambient Temparature Ta (°C) Aug. 2009 2 MITSUBISHI SEMICONDUCTORS <HVIC> M81725FP HIGH VOLTAGE HIGH SIDE DRIVER ELECTRICAL CHARACTERISTICS (Ta = 25°C, Vcc=VBS(=VB-VS)=15V, unless otherwise specified) Symbol Parameter Test conditions Min. Limits Typ.* Max. Unit IFS Floating Supply Leakage Current VB = VS = 600V — — 1.0 µA IBS VBS standby Current IN = 0V — 0.2 0.5 mA ICC Vcc standby Current IN = 0V 0.1 0.3 0.6 mA — V VOH High Level Output Voltage IO = 0A, LO, HO 13.8 14.4 VOL Low Level Output Voltage IO = 0A, LO, HO — — 0.1 V VIH High Level Input Threshold Voltage IN 4.0 — — V VIL Low Level Input Threshold Voltage IN — — 0.8 V IIH High Level Input Bias Current VIN = 5V — 17 40 µA IIL Low Level Input Bias Current VIN = 0V — 0 1 µA VBSuvr VBS Supply UV Reset Voltage 8.0 8.9 9.8 V VBSuvt VBS Supply UV Trip Voltage 7.4 8.2 9.0 V VBSuvh VBS Supply UV Hysteresis Voltage 0.3 0.7 — V tVBSuv VBS Supply UV Filter Time — 7.5 — µs VPonr Power-On Reset Voltage tPonr(FIL) Power-On Reset Filter Time — — 6.0 V 300 — — ns A IOH Output High Level Short Circuit Pulsed Current VO = 0V, VIN = 5V, PWD < 10µs 2.0 3.0 — IOL Output Low Level Short Circuit Pulsed Current VO = 15V, VIN = 0V, PWD < 10µs 2.0 3.0 — A ROH Output High Level On Resistance IO = –200mA, ROH = (VOH–VO)/IO — 10 20 Ω ROL Output Low Level On Resistance IO = 200mA, ROL = VO/IO — 2.5 3.0 Ω tdLH Turn-On Propagation Delay CL = 1000pF between OUT-Vs — 200 280 ns tdHL Turn-Off Propagation Delay CL = 1000pF between OUT-Vs — 180 260 ns tr Turn-On Rise Time CL = 1000pF between OUT-Vs — 25 45 ns tf Turn-Off Fall Time CL = 1000pF between OUT-Vs — 20 35 ns CONVEX PULSE : IN — 100 — ns CONCAVE PULSE : IN — 100 — ns IN(FIL) Input Filter Time * Typ. is not specified Aug. 2009 3 MITSUBISHI SEMICONDUCTORS <HVIC> M81725FP HIGH VOLTAGE HIGH SIDE DRIVER TIMING REQUIREMENT IN 50% tdLH 50% tr tdHL 90% OUT tf 90% 10% 10% FUNCTION TABLE IN VBS UV OUT H→L H L OUT = Low L→H H H OUT = High X L L OUT = Low, VBS UV tripped Behavioral state Note1 : “L” state of VBS UV, Vcc UV means that UV trip voltage. 2 : X (IN) : L→H or H→L. 3 : Output signal (HO) is triggered by the edge of input signal. IN HO Aug. 2009 4 MITSUBISHI SEMICONDUCTORS <HVIC> M81725FP HIGH VOLTAGE HIGH SIDE DRIVER Operation sequence Diagram VCC VBS UVTrip VBS VBS UVReset VBSuvr VBSuvt VPonrReset VPonr IN tPonr (FIL) tVBSuv OUT 1. Input/Output Timing HIGH ACTIVE (When input signal is “H”, then output signal is “H”.) 2. VBS Supply Under Voltage Lockout If VBS supply voltage drops below UV trip voltage (VBSuvt) for VBS supply UV filter time, output signal is shut down. As soon as VBS supply voltage rises over UV reset voltage, output signal HO becomes “H” at following “H” edge of input signal. Note: If the VBS drops below VPON, the filter time will become tPOR (FIL) instead of tVBSuv. 3. Allowable Supply Voltage Transient It is recommended to supply VCC firstly and supply VBS secondly. When shutting off supply voltage, please shut off VBS firstly and shut off VCC secondly. When applying VCC and VBS, power supply should be applied slowly. If it rises rapidly, output signal (HO or LO) may be malfunction. Note: If VCC is below its recommended value: 10V, output may not response input signals. Note: Please take enough evaluation in the case of power supply shut down and power supply applying after its shut-down. Aug. 2009 5 MITSUBISHI SEMICONDUCTORS <HVIC> M81725FP HIGH VOLTAGE HIGH SIDE DRIVER PACKAGE OUTLINE 5 E NOTE) 1. DIMENSIONS “*1” AND “*2” DO NOT INCLUDE MOLD FLASH. 2. DIMENSION “*3” DOES NOT INCLUDE TRIM OFFSET. *1 F 1 Index mark 4 c A2 A1 *2 D L A HE 8 *3 e bp y Detail F Reference Dimension in Millimeters Symbol Min Nom Max D E A2 A1 A bp c q HE e y L 4.8 4.2 – 0.05 – 0.35 0.13 0° 5.9 1.12 – 0.2 5.0 4.4 1.5 – – 0.4 0.15 – 6.2 1.27 – 0.4 5.2 4.6 – – 1.9 0.5 0.2 10° 6.5 1.42 0.1 0.6 Aug. 2009 6