TLP137 TOSHIBA Photocoupler GaAs IRed & Photo−Transistor TLP137 Office Machine Programmable Controllers AC / DC−Input Module Telecommunication Unit in mm The TOSHIBA mini flat coupler TLP137 is a small outline coupler, suitable for surface mount assembly. TLP137 consists of a gallium arsenide infrared emitting diode, optically coupled to a photo transistor, and provides high CTR at low input current. TLP137 base terminal is for the improvement of speed, reduction of dark current, and enable operation. z z z z z Collector−emitter voltage: 80V(min.) Current transfer ratio: 100%(min.) Rank BV: 200%(min.) Isolation voltage: 3750Vrms(min.) UL recognized: UL1577, file No. E67349 Current transfer ratio Classi− fication TOSHIBA 11−4C2 Weight: 0.09 g Current Transfer Ratio (min.) Ta = 25°C Ta =−25~75°C IF = 0.5mA IF = 1mA IF = 1mA VCE = 0.5V VCE = 1.5V VCE = 0.5V Marking Of Classi− fication Rank BV 200% 100% 100% BV Standard 100% 50% 50% BV, Blank Pin Configurations (top view) 1 6 (Note) Application type name for certification test, please use standard product type name, i.e. TLP137 (BV): TLP137 5 3 4 1 : Anode 3 : Cathode 4 : Emitter 5 : Collector 6 : Base 1 2007-10-01 TLP137 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit IF 50 mA ΔIF / °C −0.7 mA / °C Peak forward current (100μs pulse, 100pps) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C Collector−emitter voltage VCEO 80 V Collector−base voltage VCBO 80 V Emitter−collector voltage VECO 7 V Emitter−base voltage VEBO 7 V Collector current IC 50 mA Peak collector current (10ms pulse, 100pps) ICP 100 mA Power dissipation PC 150 mW ΔPC / °C −1.5 mW / °C Forward current Detector LED Forward current derating (Ta ≥ 53°C) Power dissipation derating (Ta ≥ 25°C) Tj 125 °C Storage temperature range Junction temperature Tstg −55~125 °C Operating temperature range Topr −55~100 °C Lead soldering temperature (10s) Tsol 260 °C Total package power dissipation PT 200 mW ΔPT / °C −2.0 mW / °C BVS 3750 Vrms Total package power dissipation derating (Ta ≥ 25°C) Isolation voltage (AC, 1min., RH ≤ 60%) (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4, 5 and 6 shorted together. 2 2007-10-01 TLP137 Individual Electrical Characteristics (Ta = 25°C) LED Characteristic Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10mA 1.0 1.15 1.3 V Reverse current IR VR = 5V ― ― 10 μA Capacitance CT V = 0, f = 1MHz ― 30 ― pF V(BR)CEO IC = 0.5mA 80 ― ― V V(BR)ECO IE = 0.1mA 7 ― ― V Collector−base breakdown voltage V(BR)CBO IC = 0.1mA 80 ― ― V Emitter−base breakdown voltage V(BR)EBO IE = 0.1mA 7 ― ― V VCE = 48V ― 10 100 nA VCE = 48V, Ta = 85°C ― 2 50 μA Collector−emitter breakdown voltage Emitter−collector breakdown voltage Detector Symbol Collector dark current ICEO Collector dark current ICER VCE = 48V, Ta = 85°C RBE = 1MΩ ― 0.5 10 μA Collector dark current ICBO VCB = 10V ― 0.1 ― nA DC forward current gain hFE VCE = 5V, IC = 0.5mA ― 1000 ― ― Capacitance (collector to emitter) CCE V= 0, f = 1MHz ― 12 ― pF Unit Coupled Electrical Characteristics (Ta = 25°C) Characteristic Current transfer ratio Low input CTR Base photo−current Collector-emitter saturation voltage Off−state collector current Symbol IC / IF IC / IF(low) IPB VCE(sat) Test Condition Min. Typ. Max. IF = 1mA, VCE = 0.5V 100 ― 1200 200 ― 1200 50 ― ― 100 ― ― IF = 1mA, VCB = 5V ― 5 ― IC = 0.5mA, IF = 1mA ― ― 0.4 IC = 1mA, IF = 1mA ― 0.2 ― ― ― 0.4 ― ― 10 Rank BV IF = 0.5mA, VCE = 1.5V Rank BV Rank BV IC(off) V F = 0.7V, VCE = 48V 3 % % μA V μA 2007-10-01 TLP137 Coupled Electrical Characteristics (Ta = −25~75°C) Characteristic Symbol Current transfer ratio Test Condition IF = 1mA, VCE = 0.5V IC / IF Low input CTR Rank BV IF = 0.5mA, VCE = 1.5V IC / IF(low) Rank BV Min. Typ. Max. Unit 50 ― ― 100 ― ― ― 50 ― ― 100 ― Min. Typ. Max. Unit ― 0.8 ― pF ― Ω % % Isolation Characteristics (Ta = 25°C) Characteristic Symbol Capacitance (input to output) Test Condition CS Isolation resistance VS = 0, f = 1MHz RS V = 500V 5×10 AC, 1minute Isolation voltage BVS 10 10 14 3750 ― ― AC, 1second, in oil ― 10000 ― DC, 1 minute, in oil ― 10000 ― Vdc Min. Typ. Max. Unit Vrms Switching Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Rise time tr ― 8 ― Fall time tf ― 8 ― ― 10 ― ― 8 ― ― 10 ― ― 50 ― ― 300 ― ― 12 ― ― 30 ― ― 100 ― Turn−on time ton Turn−off time toff Turn−on time tON Storage time tS Turn-off time tOFF Turn−on time tON Storage time tS Turn-off time tOFF VCC = 10V, IC = 2mA RL = 100Ω (Fig.1) RL = 4.7 kΩ RBE = OPEN VCC = 5 V, IF = 1.6mA (Fig.1) RL = 4.7kΩ RBE = 470kΩ VCC = 5 V, IF = 1.6mA μs μs μs Fig. 1 Switching time test circuit IF VCC IF tS RL RBE VCE 4 VCE 4.5V 0.5V tON tOFF VCC 2007-10-01 TLP137 PC – Ta 200 80 160 Allowable collector power dissipation PC (mw) Allowable forward current IF (mA) IF – Ta 100 60 40 20 0 －20 0 40 20 80 60 80 40 0 －20 120 100 120 0 Ambient temperature Ta (°C) 40 20 PULSE WIDTH ≦ 100 μs (mA) IF 300 Forward current Pulse forward current IFP (mA) 500 100 50 30 3 10－2 10－1 3 Duty cycle ratio Ta = 25°C 50 1000 10－3 3 30 10 5 3 1 0.5 0.3 0.1 0.6 100 0.8 DR 1.0 1.2 Forward voltage ⊿ VF / ⊿Ta － IF 1.4 VF 1.6 1.8 (V) IFP – VFP 1000 －2.8 (mA) －2.4 IFP －3.2 Pulse forward current Forward voltage temperature coefficient ⊿VF / ⊿Ta(mV /ﾟ C) 120 IF – V F 100 Ta = 25°C 10 3 100 Ambient temperature Ta (°C) IFP – DR 3000 80 60 －2.0 －1.6 －1.2 －0.8 500 300 100 50 30 10 Pulse width ≦ 10 μs 5 Repetitive frequency 3 = 100 Hz Ta = 25°C －0.4 0.1 0.3 0.5 1 3 5 Forward current IF 10 1 0.6 30 50 1.0 1.4 1.8 Pulse forward voltage (mA) 5 2.2 VFP 2.6 3.0 (V) 2007-10-01 TLP137 IC – VCE 4 IC – VCE 4 Ta = 25°C (mA) 3 0.8mA Collector current IC Collector Current IC (mA) IF = 1.0mA 2 0.6mA 0.5mA 1 0.4mA Ta = 25°C IF = 1.0mA 3 0.8mA 2 0.6mA 0.5mA 1 0.4mA 0.2mA 0 0 2 4 6 Collector-emitter voltage 0.2mA 8 0 0 10 0.2 VCE(V) 0.4 Collector-emitter voltage IC / IF (%) 10 5 Current transfer ratio IC (mA) 1.0 VCE (V) 1000 30 Collector current 0.8 IC / IF – IF IC – IF 50 3 0.6 Sample A 1 Ta = 25°C 0.5 VCE = 5V 0.3 VCE = 1.5V Sample B VCE = 0.5V 0.1 Ta = 25°C 500 Sample A 300 Sample B 100 VCE = 5V VCE = 1.5V VCE = 0.5V 50 0.05 0.03 0.1 0.5 0.3 1 Forward current 3 IF 5 30 0.1 10 0.3 0.5 Forward current (mA) IC – IF at RBE (μA) VCC IF IPB IC (mA) 10 A RBE RBE Base photo current 3 Collector current 10 (mA) Ta=25°C VCE=5V 0.5 0.3 RBE=∞ 0.1 0.1 IF 5 IPB – IF Ta=25°C 1 3 300 30 5 1 500kΩ 0.3 0.5 100kΩ 50kΩ 1 Forward current 3 IF 5 100 30 VCB VCB=0V 10 VCB=5V A 3 1 0.3 0.1 0.1 10 IF 0.3 0.5 1 Forward current (mA) 6 3 IF 5 10 (mA) 2007-10-01 TLP137 VCE(sat) – Ta ICEO – Ta 101 0.16 IF = 1mA IC = 0.5mA Collector -emitter saturation voltage VCE (sat) (V) Collector dark current ID (ICEO) (μA) 0.14 100 24V VCE=48V 10V 10 -1 5V 10 -2 0.12 0.10 0.08 0.06 0.04 0.02 0 －40 0 －20 20 40 60 80 100 Ambient temperature Ta (°C) 10-3 10-4 0 20 40 60 100 80 120 Ambient temperature Ta (°C) Switching Time – RL IC – Ta 300 30 (μs) 10 tOFF VCE=0.5V IF = 2mA 5 Switching time Collector current IC (mA) VCE=1.5V 1mA 3 0.5mA 1 100 tS 50 30 tON 10 0.5 0.2mA 0.3 5 Ta = 25°C 3 IF=1.6mA VCC=5V 0.1 RBE=470kΩ 0.05 1 －20 0 20 40 60 Ambient temperature Ta 80 100 1 (°C) 3 5 10 Load resistance 7 30 RL 50 100 (kΩ) 2007-10-01 TLP137 Switching Time – RBE Switching time Ta = 25°C 3000 IF=1.6mA VCC=5V IF=1.6mA VCC=5V 300 RL=4.7kΩ tOFF (μs) (μs) 500 5000 Ta = 25°C 100 Swithing time 1000 Switching Time – RL tS N 50 30 tOFF 1000 500 300 tS N 100 tON 10 50 30 5 3 tON 10 1 100k ５ 300k 1M Base-emitter resistance 3M RBE 1 ∞ (Ω) 3 5 10 Load resistance 8 30 RL 50 100 (kΩ) 2007-10-01 TLP137 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 9 2007-10-01