TLP321,TLP321-2,TLP321-4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP321, TLP321-2, TLP321-4 Unit in mm Programmable Controllers DC−Output Module Telecommunication The TOSHIBA TLP321, −2 and −4 consist of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode. The TLP321−2 offers two isolated channels in an eight lead plastic DIP package, while the TLP321−4 provides four isolated channels in a sixteen plastic DIP package. TLP321 / −2 / −4 have high VCEO voltage (VCEO = 80V). · Collector−emitter voltage: 80V (min.) · Current transfer ratio: 50% (min.) TOSHIBA 11−5B2 Weight: 0.26g Rank GB: 100% (min.) · Isolation voltage: 5000Vrms (min.) · UL recognized: UL1577, file no. E67349 Pin Configurations (top view) TLP321-4 TLP321-2 TLP321 1 4 1 8 1 16 2 3 2 7 2 15 3 6 3 14 4 5 4 13 5 12 6 11 7 10 8 9 1 : ANODE 2 : CATHODE 3 : EMITTER 4 : COLLECTOR TOSHIBA 11−10C4 Weight: 0.54g 1,3 : ANODE 2,4 : CATHODE 5,7 : EMITTER 6,8 : COLLECTOR 1,3,5,7 : ANODE 2,4,6,8 : CATHODE 9,11,13,15 : EMITTER 10,12,14,16 : COLLECTOR TOSHIBA 11−20A3 Weight: 1.1g 1 2002-09-25 TLP321,TLP321-2,TLP321-4 Current Transfer Ratio Current Transfer Ratio (%) (IC / IF) Type TLP321 TLP321-2 TLP321-4 Classification *1 IF = 5mA, VCE = 5V, Ta = 25°C Marking Of Classification Min. Max. (None) 50 600 BLANK, Y, Y■, G, G■, B, B■, GB Rank Y 50 150 Y, Y■ Rank GR 100 300 G, G■ Rank BL 200 600 B, B■ Rank GB 100 600 G, G■, B, B■, GB (None) 50 600 BLANK, GR, BL, GB Rank GB 100 600 GR, BL, GB *1: Ex. Rank GB: TLP321 (GB) (Note) Application type name for certification test, please use standard product type name, i. e. TLP321 (GB): TLP321 TLP321-2 (GB): TLP321-2 2 2002-09-25 TLP321,TLP321-2,TLP321-4 Maximum Ratings (Ta = 25°C) Rating Characteristic Symbol Forward current Detector LED Forward current derating Unit TLP321-1 TLP321-2 TLP321-4 IF 60 50 mA ∆IF / °C -0.7 (Ta ≥ 39°C) -0.5 (Ta ≥ 25°C) mA / °C Pulse forward current IFP 1 (100µs pulse, 100pps) A Reverse voltage VR 5 V Junction temperature Tj 125 °C Collector-emitter voltage VCEO 80 V Emitter-collector voltage VECO 7 V Collector current IC 50 mA Collector power dissipation (1 Circuit) PC 150 100 mW ∆PC / °C -1.5 -1.0 mW / °C Collector power dissipation derating (1 Circuit, Ta ≥ 25°C) Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C Operating temperature range Topr -55~100 °C Lead soldering temperature Tsol 260 (10s) °C Total package power dissipation RT 250 150 mW Total package power dissipation derating (Ta ≥ 25°C) ∆PT / °C -2.5 -1.5 mW / °C Isolation voltage (Note 1) BVS 5000 (AC, 1min., RH ≤ 60%) Vrms (Note 1) Device considered a two terminal device: LED side pins shorted together and detector side pins shorted together. 3 2002-09-25 TLP321,TLP321-2,TLP321-4 Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VCC ― 12 48 V Forward current IF ― 16 20 mA Collector current IC ― 1 10 mA Topr -25 ― 85 °C Operating temperature Individual Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Condition Min. Typ. Max. Unit Forward voltage VF IF =10 mA 1.0 1.15 1.3 V Reverse current IR VR =5 V — — 10 µA Capacitance CT V = 0, f = 1MHz — 30 — pF Collector-emitter breakdown voltage V(BR) CEO IC = 0.5mA 80 — — V Emitter-collector breakdown voltage V(BR) ECO IE = 0.1mA 7 — — V VCE = 48V — 10 100 nA VCE = 48V, Ta = 85°C — 2 50 µA V = 0, f = 1MHz — 10 — pF MIn. Typ. Max. Unit 50 — 600 100 — 600 Collector dark current ICEO Capacitance (collector to emitter) CCE Coupled Electrical Characteristics (Ta = 25°C) Characteristic Current transfer ratio Saturated CTR Collector-emitter saturation voltage Symbol Condition IC / IF IF = 5mA, VCE = 5V Rank GB IC / IF (sat) IF = 1mA, VCE = 0.4V Rank GB — 60 — 30 — — IC = 2.4mA, IF = 8mA — — 0.4 IC = 0.2mA, IF = 1mA Rank GB — 0.2 — — — 0.4 VCE (sat) 4 % % V 2002-09-25 TLP321,TLP321-2,TLP321-4 Isolation Characteristics (Ta = 25°C) Characteristic Symbol Capacitance (input to output) CS Isolation resistance RS Test Condition VS = 0, f = 1MHz BVS Typ. Max. Unit — 0.8 — pF 14 — Ω 10 VS = 500V, R.H. ≤ 60% 5×10 AC, 1 minute Isolation voltage Min. 10 5000 — — AC, 1 second, in oil — 10000 — DC, 1 minute, in oil — 10000 — Vdc Min. Typ. Max. Unit — 2 — — 3 — — 3 — — 3 — — 2 — — 15 — — 25 — Vrms Switching Characteristics (Ta = 25°C) Characteristic Symbol Rise time tr Fall time tf Turn-on time ton Turn-off time toff Turn-on time tON Storage time ts Turn-off time tOFF Test Condition VCC = 10V IC = 2mA RL = 100Ω RL = 1.9kΩ (Fig.1) VCC = 5V, IF = 16mA µs µs Fig. 1 Switching time test circuit RL IF VCC tS VCE VCE VCC 4.5V 0.5V tON 5 tOFF 2002-09-25 TLP321,TLP321-2,TLP321-4 100 100 80 80 Allowable forward current IF (mA) Allowable forward current IF (mA) TLP321-2 TLP321-4 IF – Ta TLP321 60 40 20 0 -20 0 20 40 60 80 100 60 40 20 0 -20 120 0 Ambient temperature Ta (°C) TLP321-2 TLP321-4 240 120 200 100 Allowable collector power dissipation PC (mW) Allowable collector power dissipation PC (mW) 20 40 180 120 80 40 100 120 100 120 PC – Ta 80 60 40 0 20 40 60 80 100 0 -20 120 0 Ambient temperature Ta (°C) 3000 20 40 60 80 Ambient temperature Ta (°C) TLP321-2 TLP321-4 IFP – DR TLP321 IFP – DR 3000 Pulse width ≤100µs Pulse width ≤100µs Ta = 25°C Ta = 25°C 1000 Allowable pulse forward current IFP (mA) 1000 Allowable pulse forward current IFP (mA) 80 20 0 -20 500 300 100 50 30 10 60 Ambient temperature Ta (°C) PC – Ta TLP321 IF – Ta 3 10-3 3 10 -2 3 10-1 3 500 300 100 50 30 10 100 Duty cycle ratio DR 3 10-3 3 10 -2 3 10-1 3 100 Duty cycle ratio DR 6 2002-09-25 TLP321,TLP321-2,TLP321-4 IF – VF 100 ∆VF /∆Ta – IF Ta = 25°C -2.8 Forward voltage temperature coefficient ΔVF /ΔTa (mV / °C) Forward current IF (mA) 50 30 10 5 3 1 0.5 0.3 0.1 0.4 0.6 0.8 1.0 1.2 Forward voltage VF -2.0 -1.6 -1.2 -0.8 -0.4 0.1 1.6 1.4 -2.4 0.3 0.5 (V) 1 Forward current IFp – VFp Ta = 25°C 100 50 30 10 5 3 0.8 1.6 1.2 2.0 (μA) 300 = 100Hz 100 Collector dark current ID (mA) IFP Pulse forward current IF 10 30 50 (mA) 101 Pulse width ≤10µs 500 Repetitive frequency 0.4 5 ID – Ta 1000 1 0 3 10-1 10-2 VCE=48V 5V 10-4 10-5 0 2.4 24V 10V 10-3 20 40 60 80 100 Ambient temperature Ta (°C) Pulse forward voltage VFP (V) IC – VCE IC – VCE 50 50 Ta = 25°C 50mA Ta = 25°C 15mA 30 PC MAX. 20 40 50mA 40mA IC 10mA Collector current Collector current (mA) 20mA 40 IC (mA) 30mA IF = 5mA 10 30 30mA 20mA 20 10mA 5mA 10 IF = 2mA 0 0 2 4 6 Collector-emitter voltage 8 VCE 0 10 (V) 0 0.2 0.4 0.6 Collector-emitter voltage 7 0.8 VCE 1 (V) 2002-09-25 TLP321,TLP321-2,TLP321-4 IC – IF IC / IF – IF 100 1000 5 0.4V 3 SAMPLE A 1 SAMPLE B 0.5 0.3 Ta = 25°C 0.1 0.1 0.3 1 3 10 Forward current IF 30 (%) 5V 10 500 300 Current transfer ratio (mA) IC Collector current 30 IC / IF VCE = 10V 50 Ta = 25°C VCE = 10V SAMPLE A 100 50 0.4V 10 0.1 100 0.3 (mA) 1 10 IF 30 100 (mA) Switching Time – RL Ta = 25°C IF = 5mA IF = 16mA IC = 1mA VCC = 5V 1000 500 0.1 300 tOFF 0 -40 -20 0 20 40 60 80 Switching time (µs) Collector-emitter saturation voltage VCE (sat) (V) 3 Forward current VCE (sat) – Ta 0.2 5V SAMPLE B 30 100 Ambient temperature Ta (°C) 100 tS 50 30 10 5 IC – Ta 3 IF = 25mA Collector current IC (mA) 50 30 tON 10mA 10 1 1 5mA 3 10 30 100 Load resistance RL (kΩ) 5 3 1mA 1 0.5mA 0.5 0.3 V = 5V CE 0.1 -20 0 40 60 Ambient temperature Ta (°C) 8 2002-09-25 TLP321,TLP321-2,TLP321-4 RESTRICTIONS ON PRODUCT USE 000707EBC · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. · The products described in this document are subject to the foreign exchange and foreign trade laws. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 9 2002-09-25