RF2126 RF2126High Power Linear Amplifier HIGH POWER LINEAR AMPLIFIER Features Single 3V to 6.0V Supply 1.3W Output Power 12dB Gain 45% Efficiency Power Down Mode 400MHz to 2700MHz Operation RF IN 1 8 RF OUT RF IN 2 7 RF OUT PC 3 VCC 4 5 RF OUT PACKAGE BASE GND Applications 6 RF OUT BIAS CIRCUIT 2.5GHz ISM Band Applications Digital Communication Systems PCS Communication Systems Commercial and Consumer Systems Portable Battery-Powered Equipment Functional Block Diagram Product Description The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 2.45 GHz ISM applications such as WLAN and POS terminals. The part will also function as the final stage in transmitters requiring linear amplification operating between 400MHz and 2700MHz. The device is packaged in an 8-lead plastic package with a backside ground. The device is self-contained with the exception of the output matching network and power supply feed line. It produces a typical output power level of 1W. Ordering Information RF2126 RF2126PCK 9GaAs HBT GaAs MESFET InGaP HBT High Power Linear Amplifier Fully Assembled Evaluation Board Optimum Technology Matching® Applied SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Rev A14 DS070511 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 2 POWER AMPLIFIERS RoHS Compliant & Pb-Free Product Package Style: SOIC-8 Slug 2-3 RF2126 POWER AMPLIFIERS 2 Absolute Maximum Ratings Parameter Rating Unit Supply Voltage (VCC) -0.5 to +6.5 VDC Power Control Voltage (VPC) -0.5 to +5V V DC Supply Current 450 (see Note) mA Input RF Power +20 dBm Output Load VSWR 20:1 Operating Ambient Temperature -40 to +85 °C Storage Temperature -40 to +125 °C Parameter Min. Specification Typ. Max. Caution! ESD sensitive device. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RoHS status based on EUDirective2002/95/EC (at time of this document revision). Unit T=25 °C, VCC =6.0V, VPC =3.0V, ZLOAD =12Ω, Pin = 0dBm, Freq=2450MHz, Idle current=180mA Overall Frequency Range Condition 1800 2500 MHz Maximum Output Power +27.0 dBm VCC =3.6V, PIN =+19dBm Maximum Output Power +29 dBm VCC =4.8V, PIN =+19dBm VCC =6.0V, PIN =+19dBm Maximum Output Power +31.0 dBm Total Power Added Efficiency +30.0 45 % Maximum output, VCC =3.6V Total Power Added Efficiency 45 % Maximum output, VCC =4.8V Total Power Added Efficiency 45 % Maximum output, VCC =6.0V Small-signal Gain 12 dB Second Harmonic -55 dBc Third Harmonic -60 dBc Input VSWR 1.5:1 See Application Schematic, PIN =+17dBm With external matching network; see application schematic Two-tone Specification Average Two-Tone Power +27 dBm PEP-3dB -25 dBc POUT =+24dBm for each tone IM5 -35 dBc POUT =+24dBm for each tone IM7 -55 dBc POUT =+24dBm for each tone V To obtain 180mA idle current V Threshold voltage at device input IM3 -24 Power Control VPC 1.5 3.0 Power Control “OFF” 0.2 0.5 2-4 3.5 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. Rev A14 DS070511 RF2126 Min. Specification Typ. Max. Unit Condition 2 Power Supply Power Supply Voltage 3.0 6.5 Supply Current 350 Power Down Current 0.5 10 V mA POUT =+30dBm, VCC =6.0V μA VPC =0.2V Note: For infrastructure class operation, the maximum allowable current over all operating conditions is 260mA. This implies the need for an external active bias control network to control ICC over temperature and normal process variation. The RF5187 datasheet provides an example of a recommended active bias control circuit. For consumer systems with typical ambient operating temperature requirements below +50°C, the customer may exceed this 260mA ICC limit. However, for best reliability in all applications, the maximum continuous dissipated power (ICC *VCC -PRF) for this part is 1.3W. Rev A14 DS070511 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 2-5 POWER AMPLIFIERS Parameter RF2126 Function RF IN 2 3 RF IN PC 4 VCC 5 RF OUT 6 7 8 Pkg Base RF OUT RF OUT RF OUT GND POWER AMPLIFIERS 2 Pin 1 Description Interface Schematic RF input. This input is DC coupled, so an external blocking capacitor is required if this pin is connected to a DC path. An optimum match to 50Ω is obtained by providing an external series capacitor of 1.8pF and then a shunt capacitor of 1.3pF; see the Application Schematic. Those values are typical for 2450MHz; other values may be required for other frequencies. Same as pin 1. Power control pin. For obtaining maximum performance the voltage on this pin can be used to set correct bias level. In a typical application this is implemented by a feedback loop. The feedback can be based on the actual supply current of the device, i.e. maintaining a fixed current level, or it can be based on the RF output power level to maintain a fixed RF power level (Automatic Level Control loop). A voltage of 0.5V or lower brings the part into power down state. Power supply pin for the bias circuits. External low frequency bypass capacitors should be connected if no other low frequency decoupling is nearby. RF output and bias for the output stage. The power supply for the output transistor needs to be supplied to this pin. This can be done through a quarter-wavelength microstrip line that is RF grounded at the other end, or through an RF inductor that supports the required DC currents. Optimum load impedance is achieved by providing a shunt capacitor of 1.8pF and a series capacitor of 3.3pF; see the Application Schematic. Those values are typical for 2450MHz; other values may be required for other frequencies. Since there are several output pins available, which are internally connected, one pin can be used for connecting the bias, another for connecting a (third) harmonic trap filter, and the other pins for the RF output. Same as pin 5. Same as pin 5. Same as pin 5. Ground connection. The backside of the package should be connected to the ground plane through a short path, i.e., vias under the device may be required. Package Drawing 0.157 0.150 0.196 0.189 0.0192 0.0138 0.004 0.002 -A- 0.050 0.244 0.230 Shaded lead is pin 1. 0.065 0.055 EXPOSED HEATSINK 8° MAX 0° MIN 0.123 0.107 0.035 0.016 0.0098 0.0075 0.087 0.071 2-6 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. Rev A14 DS070511 RF2126 Application Schematic 2450MHz Operation POWER AMPLIFIERS 2 1.8 pF RF IN 1 8 2 7 3 6 1.3 pF 3.3 pF VPD 1.8 pF 1000 pF BIAS CIRCUIT 5 4 PACKAGE BASE VCC 1000 pF Rev A14 DS070511 RF OUT 4.7 nH 33 pF 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 2-7 RF2126 Application Schematic 433MHz Operation POWER AMPLIFIERS 2 15 Ω RF IN 15 nH VPD 1000 pF 6.8 nH 2 7 3 6 BIAS CIRCUIT PACKAGE BASE 1000 pF 100 pF RF OUT 15 pF 5 4 VCC 2-8 8 1 56 nH 33 pF 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. Rev A14 DS070511 RF2126 Evaluation Board Schematic 2450 MHz Operation POWER AMPLIFIERS 2 P1 P1-1 P1-3 C1 1.3 pF VPD 1 8 2 7 3 C6 1000 pF BIAS CIRCUIT 4 2 GND 3 VPC C8 1 uF C7 1000 pF 6 C4 3.3 pF C3 1.8 pF 50 Ω μstrip J2 RF OUT 5 PACKAGE BASE VCC Rev A14 DS070511 VCC C2 1.8 pF 50 Ω μstrip J1 RF IN 1 L1 4.7 nH C5 33 pF 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 2-9 RF2126 Evaluation Board Layout 1.5” x 1.0” 2 POWER AMPLIFIERS Board Thickness 0.031”, Board Material FR-4 2-10 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. Rev A14 DS070511 RF2126 RoHS* Banned Material Content Yes Package total weight in grams (g): 0.091 Compliance Date Code: 0506 Bill of Materials Revision: - Pb Free Category: B i l l o f Ma te r i a l s POWER AMPLIFIERS RoHS Compliant: 2 e3 Pa r ts Pe r Mi l l i o n (PPM ) Pb Cd Hg Cr VI PB B PB DE Di e 0 0 0 0 0 0 Mo l di ng Co mp o und 0 0 0 0 0 0 Le a d F r a me 0 0 0 0 0 0 Di e Atta ch Ep o x y 0 0 0 0 0 0 Wi r e 0 0 0 0 0 0 So l de r Pl a ti ng 0 0 0 0 0 0 Thi s R o HS b a nne d ma te r i a l co nte nt de cl a r a ti o n wa s pr e p a r e d so l e l y o n i nfo r ma ti o n, i ncl udi ng a na l y ti ca l da ta , pr o vi de d to R F M D by i ts sup pl i e r s, a nd a p p l i e s to the B i l l o f Ma te r i a l s (B OM ) r e vi si o n no te d * DIRECTIVE 2002/95/EC OF THE EUROPEAN PARLIAMENT AND OF THE COUNCIL of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment Rev A14 DS070511 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 2-11 RF2126 POWER AMPLIFIERS 2 2-12 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. Rev A14 DS070511