TOSHIBA MP4104

MP4104
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type
(Four Darlington Power Transistors in One)
MP4104
Industrial Applications
High Power Switching Applications
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching
•
Small package by full molding (SIP 10 pins)
•
High collector power dissipation (4-device operation)
•
High collector current: IC (DC) = 4 A (max)
•
High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1.5 A)
Unit: mm
: PT = 4 W (Ta = 25°C)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEO
100
V
Emitter-base voltage
VEBO
6
V
DC
IC
4
Pulse
ICP
6
IB
Collector current
Continuous base current
Collector power dissipation
(1-device operation)
Collector power dissipation
(4-device operation)
Junction temperature
Storage temperature range
JEDEC
―
A
JEITA
―
0.5
A
TOSHIBA
PC
2.0
W
PT
4.0
W
Tj
150
°C
Tstg
−55 to 150
°C
2-25A1A
Weight: 2.1 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Array Configuration
3
5
4
2
7
6
9
8
1
10
R1 R2
R1 ≈ 4.5 kΩ
R2 ≈ 300 Ω
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MP4104
Marking
MP4104
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Thermal Characteristics
Characteristics
Thermal resistance from junction to
ambient
Symbol
Max
Unit
ΣRth (j-a)
31.3
°C/W
TL
260
°C
(4-device operation, Ta = 25°C)
Maximum lead temperature for
soldering purposes
(3.2 mm from case for 10 s)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 120 V, IE = 0 A
―
―
10
μA
Collector cut-off current
ICEO
VCE = 100 V, IB = 0 A
―
―
10
μA
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0 A
0.5
―
2.5
mA
Collector-base breakdown voltage
V (BR) CBO
IC = 1 mA, IE = 0 A
120
―
―
V
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0 A
100
―
―
V
hFE (1)
VCE = 2 V, IC = 1.5 A
2000
―
15000
hFE (2)
VCE = 2 V, IC = 3.0 A
1000
―
―
Collector-emitter
VCE (sat)
IC = 1.5 A, IB = 3 mA
―
―
1.5
Base-emitter
VBE (sat)
IC = 1.5 A, IB = 3 mA
―
―
2.0
fT
VCE = 2 V, IC = 0.5 A
―
60
―
MHz
VCB = 10 V, IE = 0 A, f = 1 MHz
―
30
―
pF
―
0.3
―
―
2.0
―
―
0.4
―
Saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Cob
ton
Input
Storage time
20 μs
tstg
IB2
IB2
IB1
Switching time
IB1
Fall time
tf
Output
20 Ω
DC current gain
―
V
μs
VCC = 30 V
IB1 = −IB2 = 3 mA
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MP4104
IC – VCE
IC – VBE
6
6
10
3
Common emitter
1
5
(A)
(A)
0.3
4
Collector current IC
Collector current IC
5 VCE = 2 V
0.5
0.2
3
2
IB = 0.15 mA
1
Common emitter
Ta = 25°C
1
2
3
4
Collector-emitter voltage
5
6
3
2
Ta = 100°C
1
0
0
0
4
0
0
7
0.4
VCE (V)
0.8
1.2
VCE (V)
25
−55
1000
500
0.1
VBE (V)
0.3
0.5
1
Collector current IC
3
5
10
Ta = 25°C
2.0
IC = 6 A
1.6
5
4
3
2
1.2
1
0.8
0.1
0.4
0.5
)
300
0.05
2.8
Common emitter
Ta = 100°C
3000
2.4
VCE – IB
Common emitter
VCE = 2 V
5000
2.0
2.4
Collector-emitter voltage
DC current gain hFE
10000
1.6
Base-emitter voltage
hFE – IC
20000
−55
25
0
0.1
(A)
0.3
1
3
10
30
100
300 500
Base current IB (mA)
VCE (sat) – IC
VBE (sat) – IC
10
Common emitter
Base-emitter saturation voltage
VBE (sat) (V)
Collector-emitter saturation voltage
VCE (sat) (V)
10
IC/IB = 500
5
3
1
Ta = −55°C
0.5
100
0.3
0.1
0.3
25
0.5
1
Collector current IC
3
5
Common emitter
3
Ta = −55°C
1
(A)
25
100
0.5
0.3
0.1
10
IC/IB = 500
5
0.3
0.5
1
Collector current IC
3
3
5
10
(A)
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MP4104
rth – tw
Transient thermal resistance rth (°C/W)
300
100
30
Curves should be applied in thermal
(4)
limited area.
(Single nonrepetitive pulse)
The figure shows thermal resistance per
device versus pulse width.
(1)
(3)
(2)
10
3
-No heat sink/Attached on a circuit board(1) 1-device operation
(2) 2-device operation
(3) 3-device operation
Circuit board
(4) 4-device operation
1
0.3
0.001
0.01
0.1
1
Pulse width
10
100
tw (s)
Safe Operating Area
ΔTj – PT
160
Transient thermal resistance rth (°C/W)
10
IC max (pulsed)*
5
1 ms*
100 μs*
10 ms*
1
0.5
0.3
0.1
*: Single nonrepetitive pulse
Ta = 25°C
0.05 Curves must be derated linearly
with increase in temperature.
0.03
3
5
10
1
(1)
50
(3)
Circuit board
-Circuit board40
(1) 1-device operation
(2) 2-device operation
(3) 3-device operation
(4) 4-device operation
1
2
3
Total power dissipation
100
(4)
80
VCEO max
30
(2)
120
0
0
4
PT
5
(W)
200
Collector-emitter voltage VCE (V)
PT – Ta
PT (W)
8
Total power dissipation
Collector current IC
(A)
3
1000
-Attached on a circuit board(1) 1-device operation
(2) 2-device operation
(3) 3-device operation
(4) 4-device operation
6
4
(4)
Circuit board
(3)
(2)
2
0
0
(1)
40
80
120
160
200
Ambient temperature Ta (°C)
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MP4104
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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