MP4506 TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Four Darlington Power Transistors inOne) MP4506 Industrial Applications High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching • Package with heat sink isolated to lead (SIP 12 pins) • High collector power dissipation (4-device operation) Unit: mm : PT = 5 W (Ta = 25°C) • High collector current: IC (DC) = 5 A (max) • High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 3 A) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 5 V IC 5 ICP 8 IB PC DC Collector current Pulse Continuous base current Collector power dissipation (1-device operation) Collector power dissipation Ta = 25°C (4-device operation) Tc = 25°C Isolation voltage Junction temperature Storage temperature range JEDEC ― A JEITA ― 0.1 A TOSHIBA 3.0 W 2-32B1B Weight: 6.0 g (typ.) 5.0 PT W 25 VIsol 1000 V Tj 150 °C Tstg −55 to 150 °C Array Configuration 2 4 8 5 1 R1 R2 3 R1 ≈ 5 kΩ 9 6 11 12 7 10 R2 ≈ 200 Ω 1 2004-07-01 MP4506 Marking MP4506 JAPAN Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Thermal Characteristics Characteristics Thermal resistance from junction to ambient Symbol Max Unit ΣRth (j-a) 25 °C/W ΣRth (j-c) 5.0 °C/W TL 260 °C (4-device operation, Ta = 25°C) Thermal resistance from junction to case (4-device operation, Tc = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 100 V, IE = 0 A ― ― 10 µA Collector cut-off current ICEO VCE = 100 V, IB = 0 A ― ― 10 µA Emitter cut-off current IEBO VEB = 5 V, IC = 0 A 0.3 ― 2.0 mA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 A 100 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = 30 mA, IB = 0 A 100 ― ― V hFE (1) VCE = 3 V, IC = 0.5 A 1000 ― ― hFE (2) VCE = 3 V, IC = 3 A 1000 ― ― Collector-emitter VCE (sat) IC = 3 A, IB = 12 mA ― ― 2.0 Base-emitter VBE (sat) IC = 3 A, IB = 12 mA ― ― 2.5 fT VCE = 3 V, IC = 0.5 A 3 ― ― MHz VCB = 10 V, IE = 0 A, f = 1 MHz ― 40 ― pF ― 0.5 ― ― 3.0 ― ― 2.0 ― Saturation voltage Transition frequency Collector output capacitance Turn-on time Cob ton Input Storage time 20 µs tstg IB2 IB2 IB1 Switching time Fall time IB1 Output 10 Ω DC current gain ― V µs VCC = 30 V tf IB1 = −IB2 = 12 mA, duty cycle ≤ 1% 2 2004-07-01 MP4506 Emitter-Collector Diode Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Maximum forward current IFM ― ― ― 5 A Surge current IFSM t = 1 s, 1 shot ― ― 8 A IF = 1 A, IB = 0 A ― 1.2 1.8 V ― 1.0 ― µs ― 5 ― µC Forward voltage VF Reverse recovery time trr Reverse recovery charge Qrr IF = 3 A, VBE = −3 V, dIF/dt = −50 A/µs 3 2004-07-01 MP4506 IC – VCE 5 Common emitter Tc = 25°C 3 2 Common emitter VCE = 3 V 6 IC (A) 1.5 1 Collector current Collector current IC (A) 8 IC – VBE 8 0.7 4 0.5 IB = 0.3 mA 2 6 4 Tc = 100°C 25 −55 2 0 0 0 2 4 6 Collector-emitter voltage 8 0 0 10 VCE 0.8 (V) 1.6 2.4 Base-emitter voltage hFE – IC 3.2 VBE VCE – IB Common emitter (V) VCE 10000 5000 Tc = 100°C 3000 25 −55 1000 0.1 0.3 0.5 1 3 5 10 Tc = 25°C 5 1.6 IC = 8 A 3 1.2 1 0.8 0.1 0.4 ) 500 200 0.05 Common emitter 2.0 Collector-emitter voltage DC current gain hFE VCE = 3 V 20 0 0.1 Collector current IC (A) 0.3 0.5 1 3 5 Base current VCE (sat) – IC 30 50 100 300 IB (mA) 10 Common emitter Common emitter Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) 10 VBE (sat) – IC 10 IC/IB = 250 5 3 Tc = −55°C 1 25 0.3 0.1 (V) 2.4 30000 0.5 4.0 100 0.3 0.5 1 3 5 3 Tc = −55°C 1 Collector current IC (A) 25 100 0.5 0.3 0.1 10 IC/IB = 250 5 0.3 0.5 1 3 5 10 Collector current IC (A) 4 2004-07-01 MP4506 rth – tw Curves should be applied in thermal 100 Transient thermal resistance rth (°C/W) 300 limited area. (Single nonrepetitive pulse) The figure shows thermal resistance per device versus pulse width. (4) 30 (3) (2) 10 (1) 3 -No heat sink/Attached on a circuit board(1) 1-device operation (2) 2-device operation 1 (3) 3-device operation Circuit board (4) 4-device operation 0.3 0.001 0.01 0.1 1 10 Pulse width tw 100 1000 (s) Safe Operating Area PT – Ta 8 20 10 ms 1 ms 100 µs Total power dissipation 3 1 0.5 0.3 (2) 2-device operation (3) 3-device operation (4) (3) 4 (2) (1) 40 80 120 Ambient temperature 0.05 Curves must be derated linearly with VCEO max increase in temperature. 0.03 1 3 5 10 30 50 100 VCE 160 Ta 200 (°C) 200 (V) ∆Tj – PT 160 (°C) Collector-emitter voltage Circuit board 2 *: Single nonrepetitive pulse Tc = 25°C ∆Tj 0.1 (4) 4-device operation Attached on a circuit board 6 0 0 Junction temperature increase Collector current IC (A) 5 (1) 1-device operation (W) IC max (pulsed)* PT 10 (1) (2) (3) (4) 120 Attached on a circuit board 80 Circuit board (1) 1-device operation 40 (2) 2-device operation (3) 3-device operation (4) 4-device operation 0 0 2 4 6 Total power dissipation 5 8 PT 10 (W) 2004-07-01 MP4506 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 2004-07-01