MP6301 TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Six Darlington Power Transistors inOne) MP6301 Industrial Applications High Power Switching Applications 3-Phase Motor Drive and Bipolar Drive of Pulse Motor • Small package by full molding (SIP 12 pins) • High collector power dissipation (6-device operation) : PT = 4.4 W (Ta = 25°C) • High collector current: IC (DC) = ±3 A (max) • High DC current gain: hFE = 2000 (min) (VCE = ±2 V, IC = ±1 A) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Rating Symbol NPN PNP Unit Collector-base voltage VCBO 100 −100 V Collector-emitter voltage VCEO 80 −80 V Emitter-base voltage VEBO 8 −8 V DC IC 3 −3 Pulse ICP 5 −5 Continuous base current IB 0.5 −0.5 Collector power dissipation (1-device operation) PC Collector power dissipation (6-device operation) Junction temperature Collector current Storage temperature range A JEDEC ― A JEITA ― 2.0 W TOSHIBA PT 4.4 W Tj 150 °C Tstg −55 to 150 °C 2-32C1F Weight: 3.9 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Array Configuration 12 R1 R2 4 2 7 10 3 6 5 8 9 R1 R2 1 R1 ≈ 4.5 kΩ, R2 ≈ 300 Ω 11 1 2006-10-27 MP6301 Marking MP6301 JAPAN Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Thermal Characteristics Characteristics Thermal resistance from junction to ambient Symbol Max Unit ΣRth (j-a) 28.4 °C/W TL 260 °C (6-device operation, Ta = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) Electrical Characteristics (Ta = 25°C) (NPN transistor) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 100 V, IE = 0 A ― ― 20 μA Collector cut-off current ICEO VCE = 80 V, IB = 0 A ― ― 20 μA Emitter cut-off current IEBO VEB = 8 V, IC = 0 A 0.8 ― 4.0 mA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 A 100 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 A 80 ― ― V hFE (1) VCE = 2 V, IC = 1 A 2000 ― ― hFE (2) VCE = 2 V, IC = 2 A 1000 ― ― Collector-emitter VCE (sat) IC = 2 A, IB = 4 mA ― ― 1.8 Base-emitter VBE (sat) IC = 2 mA, IB = 4 mA ― ― 2.3 fT VCE = 2 V, IC = 0.5 A ― 100 ― MHz VCB = 10 V, IE = 0 A, f = 1 MHz ― 20 ― pF ― 0.4 ― ― 3.0 ― ― 0.6 ― Saturation voltage Transition frequency Collector output capacitance Turn-on time Cob ton Input Storage time 20 μs tstg IB2 IB2 IB1 Switching time Fall time IB1 Output 15 Ω DC current gain ― V μs VCC = 30 V tf IB1 = −IB2 = 4 mA, duty cycle ≤ 1% 2 2006-10-27 MP6301 Emitter-Collector Diode Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Forward current IFM ― ― ― 3 A Surge current IFSM t = 1 s, 1 shot ― ― 5 A IF = 1 A, IB = 0 A ― ― 2.0 V ― 1 ― μs ― 5 ― μC Min Typ. Max Unit Forward voltage VF Reverse recovery time trr Reverse recovery charge Qrr IF = 3 A, VBE = −3 V, dIF/dt = −50 A/μs Electrical Characteristics (Ta = 25°C) (PNP transistor) Characteristics Symbol Test Condition Collector cut-off current ICBO VCB = −100 V, IE = 0 A ― ― −20 μA Collector cut-off current ICEO VCE = −80 V, IB = 0 A ― ― −20 μA Emitter cut-off current IEBO VEB = −8 V, IC = 0 A −0.8 ― −4.0 mA Collector-base breakdown voltage V (BR) CBO IC = −1 mA, IE = 0 A −100 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 A −80 ― ― V hFE (1) VCE = −2 V, IC = −1 A 2000 ― ― hFE (2) VCE = −2 V, IC = −2 A 1000 ― ― Collector-emitter VCE (sat) IC = −2 A, IB = −4 mA ― ― −1.8 Base-emitter VBE (sat) IC = −2 A, IB = −4 mA ― ― −2.3 VCE = −2 V, IC = −0.5 A ― 50 ― MHz VCB = −10 V, IE = 0 A, f = 1 MHz ― 30 ― pF ― 0.4 ― ― 1.8 ― ― 0.4 ― Saturation voltage Transition frequency Collector output capacitance Turn-on time fT Cob ton Storage time tstg IB1 IB1 Switching time IB2 Input Output IB2 15 Ω DC current gain V μs VCC = −30 V 20 μs Fall time ― tf −IB1 = IB2 = 4 mA, duty cycle ≤ 1% Emitter-Collector Diode Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Forward current IFM ― ― ― 3 A Surge current IFSM t = 1 s, 1 shot ― ― 5 A IF = 1 A, IB = 0 A ― ― 2.0 V ― 500 ― μs ― 2.7 ― μC Forward voltage VF Reverse recovery time trr Reverse recovery charge Qrr IF = 3 A, VBE = 3 V, dIF/dt = −50 A/μs 3 2006-10-27 MP6301 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 4 2006-10-27