MITSUBISHI MGF1601B_1

MITSUBISHI SEMICONDUCTOR GaAs FET
MGF1601B
MICROWAVE POWER GaAs FET
DESCRIPTION
The MGF1601B, medium-power GaAs FET with an N-channel
Schottky gate, is designed for use in S to X band amplifiers and
oscillators. The hermetically sealed metalceramic
Unit:millimeters
OUTLINE DRAWING
4MIN.
package
4MIN.
1
assures minimum parasitic losses, and has a configuration suitable
for microstrip circuits.
0.5±0.15
FEATURES
• High output power at 1dB gain compression
P1dB=21.8dBm(TYP.)
2
@f=8GHz
2
• High linear power gain
GLP=8dB(TYP.)
@f=8GHz
0.5±0.15
APPLICATION
3
S to X band medium-power amplifiers and oscillators.
2.5±0.2
QUALITY GRADE
• GG
RECOMMENDED BIAS CONDITIONS
• VDS=6V
• ID=100mA
1 GATE
• Refer to Bias Procedure
2 SOURCE
3 DRAIN
GD-10
ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)
Symbol
VGDO
VGSO
ID
IGR
IGF
PT
Tch
Tstg
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation
Channel temperature
Storage temperature
Ratings
*1
-8
-8
250
-0.6
1.5
1.2
175
-65 to +175
Unit
V
V
mA
mA
mA
W
˚C
˚C
*1:TC=25˚C
ELECTRICAL CHARACTERISTICS (Ta=25˚C)
Symbol
V(BR)GDO
V(BR)GSO
IGSS
IDSS
VGS(off)
gm
GLP
P1dB
Rth(ch-c)
Parameter
Test conditions
Gate to drain breakdown voltage IG=-200µA
Gate to source breakdown voltage IG=-200µA
Gate to source leakage current
VGS=-3V,VDS=0V
VGS=0V,VDS=3V
Saturated drain current
Gate source cut-off voltage
VDS=3V,ID=100µA
Transconductance
VDS=3V,ID=100mA
VDS=6V,ID=100mA,f=8GHz
Linear power gain
Output power at 1dB gain
compression
Thermal resistance
VDS=6V,ID=100mA,f=8GHz
*1
∆Vf method
Min
-8
-8
–
150
-1.5
70
6
Limits
Typ
–
–
–
200
–
90
8
Max
–
–
20
250
-4.5
–
–
20.8
21.8
–
dBm
–
–
125
˚C/W
Unit
V
V
µA
mA
V
mS
dB
*1:Channel to ambient
Nov. ´97
MITSUBISHI SEMICONDUCTOR GaAs FET
MGF1601B
MICROWAVE POWER GaAs FET
TYPICAL CHARACTERISTICS (Ta=25˚C)
ID vs. VDS
200
VGS=-0.5V/step
VGS=0V
100
0
2
0
4
6
10
8
DRAIN TO SOURCE VOLTAGE VDS(V)
PO vs. Pin
(f=8GHz)
30
PO vs. Pin
(f=12GHz)
Gain:10dB
ID=100mA
25
30
8
6
4 2
Gain:10dB
ID=100mA
25
20
8
6
4 2
PO
20
PO
15
15
10
10
5
5
VDS=6V
VDS=4V
0
-5
0
5
10
INPUT POWER
15
20
Pin(dBm)
VDS=6V
VDS=4V
0
25
-5
0
5
10
INPUT POWER
15
20
25
Pin(dBm)
Nov. ´97
MITSUBISHI SEMICONDUCTOR GaAs FET
MGF1601B
MICROWAVE POWER GaAs FET
S11 ,S22 vs. f.
S21 ,S12 vs. f.
+90˚
+j50
+j25
+j100
S21
12.0GHz
0.5GHz
+j10
+j250
S12
0.5GHz
12.0GHz
25
0
50
100
250
±180˚
6
5
3
2
1
0
0˚
I S 21 I
0.5GHz
12.0GHz
4
12.0GHz
S22
-j10
-j250
0.1
0.5GHz
S11
-j25
-j100
-j50
Ta=25˚C
VDS=6V
ID=100mA
0.2
-90˚
S PARAMETERS (Ta=25˚C,VDS=6V,ID=100mA)
Freq.
(GHz)
Magn.
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
11.0
11.5
12.0
0.899
0.874
0.848
0.822
0.796
0.771
0.745
0.719
0.713
0.706
0.700
0.694
0.691
0.689
0.686
0.683
0.677
0.670
0.664
0.657
0.645
0.632
0.620
0.608
S11
Angle(deg.)
-56.8
-69.4
-82.1
-94.7
-107.4
-120.0
-132.7
-145.3
-153.3
-161.3
-169.3
-177.3
176.9
171.1
165.2
159.4
153.1
146.9
140.6
134.3
127.8
121.3
114.8
108.3
Magn.
6.115
5.682
5.248
4.815
4.382
3.949
3.515
3.082
2.863
2.645
2.426
2.207
2.090
1.973
1.856
1.739
1.671
1.602
1.534
1.466
1.413
1.360
1.308
1.255
S21
Angle(deg.)
140.3
130.4
120.5
110.6
100.6
90.8
80.9
71.0
63.3
55.6
47.9
40.2
33.9
27.5
21.2
14.8
8.5
2.1
-4.3
-10.6
-17.0
-23.4
-29.7
-36.1
Magn.
0.047
0.049
0.050
0.052
0.054
0.056
0.057
0.059
0.060
0.062
0.063
0.064
0.068
0.073
0.077
0.081
0.089
0.096
0.104
0.111
0.118
0.126
0.133
0.140
S12
Angle(deg.)
52.1
49.3
46.4
43.6
40.8
38.0
35.1
32.3
33.3
34.3
35.2
36.2
37.6
39.0
40.4
41.8
40.5
39.3
38.0
36.7
33.2
29.8
26.3
22.8
Magn.
0.471
0.462
0.452
0.442
0.432
0.422
0.413
0.403
0.412
0.421
0.431
0.440
0.458
0.476
0.494
0.512
0.530
0.549
0.567
0.585
0.601
0.618
0.635
0.651
S22
Angle(deg.)
-25.2
-32.7
-40.1
-47.5
-54.9
-62.4
-69.8
-77.2
-84.2
-91.1
-98.1
-105.0
-110.3
-115.5
-120.8
-126.0
-130.8
-135.5
-140.3
-145.0
-149.4
-153.9
-158.3
-162.7
K
MSG/MAG
(dB)
0.371
0.394
0.431
0.485
0.558
0.657
0.789
0.964
1.006
1.064
1.142
1.245
1.202
1.172
1.153
1.146
1.072
1.011
0.962
0.922
0.893
0.867
0.844
0.823
21.2
20.7
20.2
19.7
19.1
18.5
17.9
17.2
16.3
14.8
13.6
12.4
12.1
11.8
11.5
11.0
11.1
11.6
11.7
11.2
10.8
10.4
9.9
9.5
Nov. ´97
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF1601B
MICROWAVE POWER GaAs FET
MITSUBISHI
ELECTRIC