MITSUBISHI MGF1801B

MITSUBISHI SEMICONDUCTOR GaAs FET
MGF1801B
MICROWAVE POWER GaAs FET
DESCRIPTION
The MGF1801B, medium-power GaAs FET with an N-channel
Schottky gate, is designed for use in S to X band amplifiers and
oscillators. The hermetically sealed metalceramic
Unit:millimeters
OUTLINE DRAWING
4MIN.
package
4MIN.
1
assures minimum parasitic losses, and has a configuration suitable
for microstrip circuits.
0.5±0.15
FEATURES
• High output power at 1dB gain compression
P1dB=23dBm(TYP.)
2
@f=8GHz
2
• High linear power gain
GLP=9dB(TYP.)
@f=8GHz
• High reliability and stability
0.5±0.15
3
APPLICATION
S to X band medium-power amplifiers and oscillators.
2.5±0.2
QUALITY GRADE
• IG
RECOMMENDED BIAS CONDITIONS
• VDS=6V
1 GATE
• ID=100mA
2 SOURCE
• Refer to Bias Procedure
3 DRAIN
GD-10
ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)
Symbol
VGDO
VGSO
ID
IGR
IGF
PT
Tch
Tstg
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation
Channel temperature
Storage temperature
*1
Ratings
-8
-8
250
-0.6
1.5
1.2
175
-65 to +175
Unit
V
V
mA
mA
mA
W
˚C
˚C
*1:TC=25˚C
ELECTRICAL CHARACTERISTICS (Ta=25˚C)
Symbol
V(BR)GDO
V(BR)GSO
IGSS
IDSS
VGS(off)
gm
GLP
P1dB
Rth(ch-c)
IG=-200µA
IG=-200µA
VGS=-3V,VDS=0V
VGS=0V,VDS=3V
VDS=3V,ID=100µA
VDS=3V,ID=100mA
VDS=6V,ID=100mA,f=8GHz
Min
-8
-8
–
150
-1.5
70
7
Limits
Typ
–
–
–
200
–
90
9
-4.5
–
–
V
V
µA
mA
V
mS
dB
VDS=6V,ID=100mA,f=8GHz
21.8
23.0
–
dBm
–
–
125
˚C/W
Parameter
Test conditions
Gate to drain breakdown voltage
Gate to source breakdown voltage
Gate to source leakage current
Saturated drain current
Gate source cut-off voltage
Transconductance
Linear power gain
Output power at 1dB gain
compression
Thermal resistance
*1
∆Vf method
Max
–
–
20
250
Unit
*1:Channel to ambient
June/2004
MITSUBISHI SEMICONDUCTOR GaAs FET
MGF1801B
MICROWAVE POWER GaAs FET
TYPICAL CHARACTERISTICS (Ta=25˚C)
ID vs. VDS
200
VGS=-0.5V/step
VGS=0V
100
0
4
2
0
6
10
8
DRAIN TO SOURCE VOLTAGE VDS(V)
PO vs. Pin
(f=8GHz)
30
PO vs. Pin
(f=12GHz)
Gain:10dB
ID=100mA
30
8
6
4 2
25
Gain:10dB
ID=100mA
8
6
4 2
25
20
PO
20
PO
15
15
10
10
5
5
VDS=6V
VDS=4V
0
-5
0
5
10
15
20
INPUT POWER Pin(dBm)
VDS=6V
VDS=4V
0
25
-5
0
5
10
15
20
25
INPUT POWER Pin(dBm)
June/2004
MITSUBISHI SEMICONDUCTOR GaAs FET
MGF1801B
MICROWAVE POWER GaAs FET
S11 ,S22 vs. f.
S21 ,S12 vs. f.
+90˚
+j50
+j25
+j100
S21
12.0GHz
0.5GHz
+j250
+j10
S12
0.5GHz
12.0GHz
25
0
50
100
250
±180˚
6
5
0.5GHz
12.0GHz
4
3
2
1
0
0˚
I S 21 I
12.0GHz
S22
-j10
-j250
0.1
0.5GHz
S11
-j25
-j100
-j50
Ta=25˚C
VDS=6V
ID=100mA
0.2
-90˚
S PARAMETERS (Ta=25˚C,VDS=6V,ID=100mA)
Freq.
(GHz)
Magn.
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
11.0
11.5
12.0
0.899
0.874
0.848
0.822
0.796
0.771
0.745
0.719
0.713
0.706
0.700
0.694
0.691
0.689
0.686
0.683
0.677
0.670
0.664
0.657
0.645
0.632
0.620
0.608
S11
Angle(deg.)
-56.8
-69.4
-82.1
-94.7
-107.4
-120.0
-132.7
-145.3
-153.3
-161.3
-169.3
-177.3
176.9
171.1
165.2
159.4
153.1
146.9
140.6
134.3
127.8
121.3
114.8
108.3
Magn.
6.115
5.682
5.248
4.815
4.382
3.949
3.515
3.082
2.863
2.645
2.426
2.207
2.090
1.973
1.856
1.739
1.671
1.602
1.534
1.466
1.413
1.360
1.308
1.255
S21
Angle(deg.)
140.3
130.4
120.5
110.6
100.6
90.8
80.9
71.0
63.3
55.6
47.9
40.2
33.9
27.5
21.2
14.8
8.5
2.1
-4.3
-10.6
-17.0
-23.4
-29.7
-36.1
Magn.
0.047
0.049
0.050
0.052
0.054
0.056
0.057
0.059
0.060
0.062
0.063
0.064
0.068
0.073
0.077
0.081
0.089
0.096
0.104
0.111
0.118
0.126
0.133
0.140
S12
Angle(deg.)
52.1
49.3
46.4
43.6
40.8
38.0
35.1
32.3
33.3
34.3
35.2
36.2
37.6
39.0
40.4
41.8
40.5
39.3
38.0
36.7
33.2
29.8
26.3
22.8
Magn.
0.471
0.462
0.452
0.442
0.432
0.422
0.413
0.403
0.412
0.421
0.431
0.440
0.458
0.476
0.494
0.512
0.530
0.549
0.567
0.585
0.601
0.618
0.635
0.651
S22
Angle(deg.)
-25.2
-32.7
-40.1
-47.5
-54.9
-62.4
-69.8
-77.2
-84.2
-91.1
-98.1
-105.0
-110.3
-115.5
-120.8
-126.0
-130.8
-135.5
-140.3
-145.0
-149.4
-153.9
-158.3
-162.7
K
MSG/MAG
(dB)
0.371
0.394
0.431
0.485
0.558
0.657
0.789
0.964
1.006
1.064
1.142
1.245
1.202
1.172
1.153
1.146
1.072
1.011
0.962
0.922
0.893
0.867
0.844
0.823
21.2
20.7
20.2
19.7
19.1
18.5
17.9
17.2
16.3
14.8
13.6
12.4
12.1
11.8
11.5
11.0
11.1
11.6
11.7
11.2
10.8
10.4
9.9
9.5
June/2004
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF1801B
MICROWAVE POWER GaAs FET
MITSUBISHI
ELECTRIC
June/2004