MSB92T1G PNP Silicon General Purpose High Voltage Transistor This PNP Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-59 package which is designed for low power surface mount applications. http://onsemi.com COLLECTOR 3 Features •This is a Pb-Free Device MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Collector‐Base Voltage V(BR)CBO -300 Vdc Collector‐Emitter Voltage V(BR)CEO -300 Vdc Emitter‐Base Voltage V(BR)EBO -5.0 Vdc IC 150 mAdc Collector Current - Continuous 2 BASE 1 EMITTER MARKING DIAGRAM THERMAL CHARACTERISTICS Symbol Max Unit Power Dissipation (Note 1) Rating PD 150 mW Junction Temperature TJ 150 °C Tstg -55X+150 °C Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a FR‐4 glass epoxy printed circuit board using the minimum recommended footprint. 3 2 1 SC-59 CASE 318D STYLE 1 J2D MG G J2D= Device Marking Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† MSB92T1G SC-59 (Pb-Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2007 August, 2007 - Rev. 0 1 Publication Order Number: MSB92T1G/D MSB92T1G ELECTRICAL CHARACTERISTICS Symbol Min Max Unit Collector‐Emitter Breakdown Voltage (IC = -1.0 mAdc, IB = 0) Characteristic V(BR)CEO -300 - Vdc Collector‐Base Breakdown Voltage (IC = -100 mAdc, IE = 0) V(BR)CBO -300 - Vdc Emitter‐Base Breakdown Voltage (IE = -100 mAdc, IE = 0) V(BR)EBO -5.0 - Vdc Collector‐Base Cutoff Current (VCB = -200 Vdc, IE = 0) ICBO - -0.25 mA Emitter-Base Cutoff Current (VEB = -3.0 Vdc, IB = 0) IEBO - -0.1 mA hFE1 hFE2 hFE3 25 40 25 - Collector‐Emitter Saturation Voltage (IC = -20 mAdc, IB = -2.0 mAdc) VCE(sat) - -0.5 Vdc Base-Emitter Saturation Voltage (IC = -20 mAdc, IB = -2.0 mAdc) VBE(sat) - -0.9 Vdc fT 50 - MHz Ccb - 6.0 pF DC Current Gain (Note 2) (VCE = -10 Vdc, IC = -1.0 mAdc) (VCE = -10 Vdc, IC = -10 mAdc) (VCE = -10 Vdc, IC = -30 mAdc) - SMALL SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = -10 mAdc, VCE = -20 Vdc, f = 20 MHz) Collector-Base Capacitance (VCB = -20 Vdc, IE = 0, f = 1.0 MHz) 2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. http://onsemi.com 2 MSB92T1G 120 hFE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125°C 100 80 25°C 60 40 -55°C 20 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain 100 C, CAPACITANCE (pF) Ceb @ 1MHz 10 1.0 0.1 0.1 Ccb @ 1MHz 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 Figure 2. Capacitance 1.4 V, VOLTAGE (VOLTS) 1.2 VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ -55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125°C, IC/IB = 10 VBE(sat) @ -55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ -55°C, VCE = 10 V 0.6 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 3. “ON” Voltages http://onsemi.com 3 MSB92T1G PACKAGE DIMENSIONS SC-59 CASE 318D-04 ISSUE G D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3 HE 2 E DIM A A1 b c D E e L HE 1 b e C A MILLIMETERS NOM MAX 1.15 1.30 0.06 0.10 0.43 0.50 0.14 0.18 2.90 3.10 1.50 1.70 1.90 2.10 0.40 0.60 2.80 3.00 MIN 0.039 0.001 0.014 0.003 0.106 0.051 0.067 0.008 0.099 INCHES NOM 0.045 0.002 0.017 0.005 0.114 0.059 0.075 0.016 0.110 MAX 0.051 0.004 0.020 0.007 0.122 0.067 0.083 0.024 0.118 STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR L A1 MIN 1.00 0.01 0.35 0.09 2.70 1.30 1.70 0.20 2.50 SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.4 0.094 1.0 0.039 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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