TSMF3710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSMF3710 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant power at wavelength of 870 nm. Features • • • • • 94 8553 High radiant power High speed tr = 30 ns High modulation band width fc = 12 MHz Peak wavelength λp = 870 nm High reliability e3 • • • • • • Low forward voltage Suitable for high pulse current application Wide angle of half intensity Compatible with automatic placement equipment EIA and ICE standard package Suitable for infrared, vapor phase and wavesolder process • 8mm tape and reel standard: GS08 or GS18 • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications • High speed IR data transmission • High power emitter for low space applications • High performance transmissive or reflective sensors Parts Table Part Ordering code Remarks TSMF3710-GS08 TSMF3710-GS08 MOQ: 7500 pc TSMF3710-GS18 TSMF3710-GS18 MOQ: 8000 pc Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Symbol Value Reverse voltage Parameter Test condition VR 5 Unit V Forward current IF 100 mA Peak forward current tp/T = 0.5, tp = 100 µs IFM 200 mA Surge forward current tp = 100 µs IFSM 1 A Power dissipation PV 170 mW Junction temperature Tj 100 °C Tamb - 40 to + 85 °C Tstg - 40 to + 100 °C Tsd 260 °C RthJA 450 K/W Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ ambient Document Number 81088 Rev. 1.3, 21-Feb-07 t ≤ 10 sec www.vishay.com 1 TSMF3710 Vishay Semiconductors Basic Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Forward voltage Typ. Max IF = 100 mA, tp = 20 ms Symbol VF Min 1.5 1.8 IF = 1 A, tp = 100 µs VF 2.3 V TKVF -2.1 mV/K Temp. coefficient of VF IF = 100 mA Reverse current VR = 5 V IR Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj 125 Radiant intensity IF = 100 mA, tp = 20 ms Ie 10 Unit V 10 µA 22 mW/sr pF IF = 1 A, tp = 100 µs Ie 100 Radiant power IF = 100 mA, tp = 20 ms φe 40 mW Temp. coefficient of φe IF = 100 mA TKφe -0.35 %/K ϕ ±60 deg Peak wavelength IF = 100 mA λp 870 nm Spectral bandwidth IF = 100 mA Δλ 40 nm Temp. coefficient of λp IF = 100 mA TKλp 0.25 nm/K Rise time IF = 100 mA tr 30 ns Fall time IF = 100 mA tf 30 ns ∅ 0.44 mm Angle of half intensity Virtual source size mW/sr Typical Characteristics Tamb = 25 °C, unless otherwise specified 125 I F - Forward Current (mA) P V - Power Dissipation (mW) 200 150 R thJA 100 50 100 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Figure 1. Power Dissipation vs. Ambient Temperature www.vishay.com 2 50 25 0 0 14846 R thJA 75 0 14847 20 40 60 80 100 Tamb - Ambient Temperature (°C) Figure 2. Forward Current vs. Ambient Temperature Document Number 81088 Rev. 1.3, 21-Feb-07 TSMF3710 Vishay Semiconductors 10000 1.25 I F - Forward Current (mA) Φe rel - Relative Radiant Power Tamb < 60 °C t p /T = 0.005 0.01 1000 0.02 0.05 100 0.2 0.5 DC 10 0.1 1 0.01 0.1 1 0.75 0.5 0.25 I F = 100 mA 0 820 100 10 Figure 3. Pulse Forward Current vs. Pulse Duration Figure 6. Relative Radiant Power vs. Wavelength 0° 1000 10° 20° 30° I e rel - Relative Radiant Intensity IF - Forward Current (mA) 920 870 λ - Wavelength (nm) 15821 t p - Pulse Length (ms) 95 9985 1.0 100 tP = 100 µs tP/T = 0.001 10 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 1 1 3 2 VF - Forward Voltage (V) 0 18873 4 0.6 0.4 0.2 0 0.2 0.4 0.6 94 8013 Figure 4. Forward Current vs. Forward Voltage Figure 7. Relative Radiant Intensity vs. Angular Displacement I e - Radiant Intensity (mW/sr) 100 10 t p = 100 µs 1 0.1 1 18874 10 100 1000 I F - Forward Pulse Current (mA) Figure 5. Radiant Intensity vs. Forward Pulse Current Document Number 81088 Rev. 1.3, 21-Feb-07 www.vishay.com 3 TSMF3710 Vishay Semiconductors Package Dimensions in mm 3.5 ± 0.2 0.9 1.75 ± 0.10 technical drawings according to DIN specifications Mounting Pad Layout Pin identification area covered with solder resist 4 2.6 (2.8) A 2.8 C 2.2 + 0.15 1.2 4 1.6 (1.9) Ø 3 2.4 + 0.15 Drawing-No.: 6.541-5025.01-4 Issue: 8; 22.11.05 95 11314-1 www.vishay.com 4 Document Number 81088 Rev. 1.3, 21-Feb-07 TSMF3710 Vishay Semiconductors Temperature - Time Profile 948625 300 max. 240 °C 10 s ca. 230 °C Temperature (°C) 250 Adhesive Tape 200 215 °C 150 100 Blister Tape max 40s max. 160 °C 90 s - 120 s Lead Temperature 50 full line dotted 2 K/s - 4 K/s : typical :process limits 0 0 50 100 150 200 250 Component Cavity Time (s) Figure 8. Lead Tin (SnPb) Reflow Solder Profile 94 8670 Figure 9. Blister Tape Drypack Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. 2.2 2.0 3.5 3.1 5.75 5.25 Floor Life Floor life (time between soldering and removing from MBB) must not exceed the time indicated in J-STD-020. TSM... is released for: Moisture Sensitivity Level 2, according to JEDEC, J-STD-020 Floor Life: 1 year Conditions: Tamb < 30 °C, RH < 60 % 3.6 3.4 4.0 3.6 8.3 7.7 1.85 1.65 1.6 1.4 4.1 3.9 4.1 3.9 0.25 2.05 1.95 94 8668 Figure 10. Tape Dimensions in mm for PLCC-2 Drying In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or Label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 % Document Number 81088 Rev. 1.3, 21-Feb-07 www.vishay.com 5 TSMF3710 Vishay Semiconductors Missing Devices Cover Tape Removal Force A maximum of 0.5 % of the total number of components per reel may be missing, exclusively missing components at the beginning and at the end of the reel. A maximum of three consecutive components may be missing, provided this gap is followed by six consecutive components. The removal force lies between 0.1 N and 1.0 N at a removal speed of 5 mm/s. In order to prevent components from popping out of the bliesters, the cover tape must be pulled off at an angle of 180° with regard to the feed direction. De-reeling direction 94 8158 > 160 mm Tape leader 40 empty compartments min. 75 empty compartments Carrier leader Carrier trailer Figure 11. Beginning and End of Reel The tape leader is at least 160 mm and is followed by a carrier tape leader with at least 40 empty compartements. The tape leader may include the carrier tape as long as the cover tape is not connected to the carrier tape. The least comoponent is followed by a carrier tape trailer with a least 75 empty compartements and sealed with cover tape. 10.0 9.0 120° 4.5 3.5 2.5 1.5 13.00 12.75 63.5 60.5 Identification Label: Vishay Type Group Tape Code Production Code Quantity 180 178 14.4 max. 94 8665 Figure 12. Dimensions of Reel www.vishay.com 6 Document Number 81088 Rev. 1.3, 21-Feb-07 TSMF3710 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 81088 Rev. 1.3, 21-Feb-07 www.vishay.com 7 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1