VISHAY TSHG6200

TSHG6200
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm,
GaAlAs Double Hetero
Description
TSHG6200 is a high speed infrared emitting diode in
GaAlAs double hetero (DH) technology, molded in a
clear, untinted plastic package.
The new technology combines high speed with high
radiant power at wavelength of 850 nm.
94 8390
Features
Applications
• High modulation bandwidth
• Extra high radiant power and radiant
intensity
e2
• Low forward voltage
• Suitable for high pulse current operation
• Standard package T-1¾ (∅ 5 mm)
• Angle of half intensity ϕ = ± 10°
• Peak wavelength λp = 850 nm
• High reliability
• Good spectral matching to Si photodetectors
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
• Infrared radiation source for CMOS cameras
(illumination). High speed IR data transmission.
Parts Table
Part
Remarks
TSHG6200
MOQ: 4000 pc
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Symbol
Value
Reverse voltage
Parameter
Test condition
VR
5
V
Forward current
IF
100
mA
200
mA
Peak forward current
tp/T = 0.5, tp = 100 µs
IFM
Surge forward current
tp = 100 µs
Unit
IFSM
1
A
Power dissipation
PV
250
mW
Junction temperature
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 85
°C
Storage temperature range
Tstg
- 40 to + 100
°C
Tsd
260
°C
RthJA
300
K/W
Soldering temperature
Thermal resistance junction/
ambient
Document Number 81078
Rev. 1.5, 28-Nov-06
t ≤ 5 sec, 2 mm from case
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TSHG6200
Vishay Semiconductors
Basic Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Forward voltage
Test condition
Symbol
Min
Typ.
Max
Unit
1.5
1.8
V
IF = 100 mA, tp = 20 ms
VF
IF = 1 A, tp = 100 µs
VF
2.3
V
TKVF
- 2.1
mV/K
Temp. coefficient of VF
IF = 100 mA
Reverse current
VR = 5 V
IR
Junction capacitance
VR = 0 V, f = 1 MHz, E = 0
Cj
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie
IF = 1 A, tp = 100 µs
Ie
10
μA
400
mW/sr
125
80
160
pF
1600
mW/sr
Radiant power
IF = 100 mA, tp = 20 ms
φe
50
mW
Temp. coefficient of φe
IF = 100 mA
TKφe
- 0.35
%/K
ϕ
± 10
deg
Peak wavelength
IF = 100 mA
λp
850
nm
Spectral bandwidth
IF = 100 mA
Δλ
40
nm
Temp. coefficient of λp
IF = 100 mA
TKλp
0.25
nm/K
Rise time
IF = 100 mA
tr
20
ns
Fall time
IF = 100 mA
tf
13
ns
Cut-off frequency
IDC = 70 mA, IAC = 30 mA pp
fc
20
MHz
∅
3.7
mm
Angle of half intensity
Virtual source diameter
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
200
175
250
200
RthJA
150
100
50
IF - Forward Current (mA)
PV - Power Dissipation (mW)
300
150
125
100
75
50
25
0
0
0
16647
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
Figure 1. Power Dissipation vs. Ambient Temperature
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RthJA
0
16964
10
20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
Figure 2. Forward Current vs. Ambient Temperature
Document Number 81078
Rev. 1.5, 28-Nov-06
TSHG6200
Vishay Semiconductors
1000
Tamb < 50°
tP/T = 0.01
1000
Radiant Power (mW)
IF - Forward Current (mA)
0.02
0.05
0.1
1
0.5
100
0.01
0.1
0.1
1.0
10
100
1
tP - Pulse Duration (ms)
16031
10
1000
Figure 6. Radiant Power vs. Forward Current
1.25
- Relative Radiant Power
1000
100
tP = 100 µs
tP/T = 0.001
e, rel
10
1.0
0.75
0.5
0.25
0
1
0
18873
1
3
2
VF - Forward Voltage (V)
4
800
900
850
- Wavelength (nm)
16972
Figure 7. Relative Radiant Power vs. Wavelength
Figure 4. Forward Current vs. Forward Voltage
4.6
4.4
15 899
1000
Ie - Radiant Intensity (mW/sr)
100
IF - Forward Current (mA)
16971
Figure 3. Pulse Forward Current vs. Pulse Duration
IF - Forward Current (mA)
10
e-
0.2
100
4.1
3.9
1.85
1.65
R=1.6
1.5
100
7.6
7.4
GND
16.3
15.7
8.9
8.7
VCC
10
OUT
1
0.45
0.35
5.3
5.1
0.1
1
16032
10
100
1000
2.05
1.95
8.1
7.9
Direction of Pulling Out
IF - Forward Current (mA)
Figure 5. Radiant Intensity vs. Forward Current
Document Number 81078
Rev. 1.5, 28-Nov-06
1.6
1.4
Figure 8. Relative Radiant Intensity vs. Angular Displacement
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TSHG6200
Vishay Semiconductors
Package Dimensions in mm
95 10917
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Document Number 81078
Rev. 1.5, 28-Nov-06
TSHG6200
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
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systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
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known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
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respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
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unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 81078
Rev. 1.5, 28-Nov-06
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Vishay
Notice
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Document Number: 91000
Revision: 08-Apr-05
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