VISHAY VSMF3710-GS08

VSMF3710
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm
RoHS Compliant, Released for Lead (Pb)-free Solder Process
Description
VSMF3710 is a high speed infrared emitting diode in
GaAlAs double hetero (DH) technology in a miniature
PLCC-2 SMD package.
DH technology combines high speed with high radiant
power at wavelength of 890 nm.
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
94 8553
High radiant power
High speed: tr = 30 ns
High modulation band width: fc = 12 MHz
e3
Peak wavelength: λp = 890 nm
High reliability
Low forward voltage
Suitable for high pulse current application
Wide angle of half intensity
Compatible with automatic placement equipment
EIA and ICE standard package
8 mm tape and reel standard: GS08 or GS18
Lead (Pb)-free reflow soldering
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
• High speed IR data transmission
• High power emitter for low space applications
• High performance transmissive or reflective
sensors
Order Instructions
Part
Ordering code
Remarks
VSMF3710
VSMF3710-GS08
MOQ: 7500 pcs, 1500 pcs per reel
VSMF3710
VSMF3710-GS18
MOQ: 8000 pcs, 8000 pcs per reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Symbol
Value
Reverse voltage
Parameter
Test condition
VR
5
Unit
V
Forward current
IF
100
mA
mA
Peak forward current
tp/T = 0.5, tp = 100 µs
IFM
200
Surge forward current
tp = 100 µs
IFSM
1
A
Power dissipation
PV
170
mW
Junction temperature
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 85
°C
Storage temperature range
Tstg
- 40 to + 100
°C
Tsd
260
°C
RthJA
400
K/W
Soldering temperature
Thermal resistance
junction / ambient
Document Number 81241
Rev. 1.5, 25-Jan-07
acc. figure 8, J-STD-020B
www.vishay.com
1
VSMF3710
Vishay Semiconductors
120
160
I F - Forward Current (mA)
Pv - Power Dissipation (mW)
180
R thJA = 400 K/W
140
120
100
80
60
40
100
R thJA = 400 K/W
80
60
40
20
20
0
0
10
20140
20
30
40
50
60
70
80
0
0
90 100
Tamb- Ambient Temperature (°C)
Figure 1. Power Dissipation Limit vs. Ambient Temperature
10
20
30
40
50
60
70
80
90 100
Tamb- Ambient Temperature (°C)
20141
Figure 2. Forward Current Limit vs. Ambient Temperature
Basic Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Max
Unit
1.4
1.6
V
IF = 100 mA, tp = 20 ms
Temp. coefficient of VF
IF = 100 mA
Reverse current
VR = 5 V
IR
Junction capacitance
VR = 0 V, f = 1 MHz, E = 0
Cj
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie
IF = 1 A, tp = 100 µs
Ie
100
Radiant power
IF = 100 mA, tp = 20 ms
φe
40
mW
Temp. coefficient of φe
IF = 100 mA
TKφe
- 0.35
%/K
ϕ
± 60
deg
Peak wavelength
IF = 100 mA
λp
890
nm
Spectral bandwidth
IF = 100 mA
Δλ
40
nm
Temp. coefficient of λp
IF = 100 mA
TKλp
0.25
nm/K
Rise time
IF = 100 mA
tr
30
ns
Fall time
IF = 100 mA
tf
30
ns
∅
0.44
mm
IF = 1 A, tp = 100 µs
Angle of half intensity
Virtual source size
www.vishay.com
2
VF
Typ.
Forward voltage
VF
2.3
V
TKVF
- 2.1
mV/K
10
µA
22
mW/sr
125
6
10
pF
mW/sr
Document Number 81241
Rev. 1.5, 25-Jan-07
VSMF3710
Vishay Semiconductors
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
10000
1.25
I F - Forward Current (mA)
Φe, rel - Relative Radiant Power
Tamb < 60 °C
t p /T = 0.005
0.01
1000
0.02
0.05
100
0.2
0.5
DC
10
0.1
1
0.01
0.1
1
0.75
0.5
0.25
0
800
100
10
t p - Pulse Length (ms)
95 9985
1.0
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure 6. Relative Radiant Power vs. Wavelength
0°
1000
10°
20°
30°
I e rel - Relative Radiant Intensity
I F - Forward Current (mA)
1000
900
λ - Wavelength (nm)
20082
100
t p = 100 µs
t p / T = 0.001
10
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
1
0
1
2
3
4
0.6
0.4
0.2
0
0.2
0.4
0.6
94 8013
VF - Forward Voltage (V)
18873_1
Figure 4. Forward Current vs. Forward Voltage
Figure 7. Relative Radiant Intensity vs. Angular Displacement
I e - Radiant Intensity (mW/sr)
100
10
t p = 100 µs
1
0.1
1
18874
10
100
1000
I F - Forward Pulse Current (mA)
Figure 5. Radiant Intensity vs. Forward Pulse Current
Document Number 81241
Rev. 1.5, 25-Jan-07
www.vishay.com
3
VSMF3710
Vishay Semiconductors
Package Dimensions
Mounting Pad Layout
1.2
4
2.6 (2.8)
area covered with
solder resist
4
1.6 (1.9)
20541_1
www.vishay.com
4
Document Number 81241
Rev. 1.5, 25-Jan-07
VSMF3710
Vishay Semiconductors
Solder Profile
Tape and Reel
300
Temperature (°C)
max. 260 °C
245 °C
255
255°C°C
240 °C
217 °C
250
PLCC-2 components are packed in antistatic blister
tape (DIN IEC (CO) 564) for automatic component
insertion. Cavities of blister tape are covered with
adhesive tape.
200
max. 30 s
150
max. 100 s
max. 120 s
Adhesive Tape
100
max. Ramp Down 6 °C/s
max. Ramp Up 3 °C/s
50
0
0
50
100
150
250
200
Blister Tape
300
Time (s)
19841
Figure 8. Lead (Pb)-free Reflow Solder Profile acc. J-STD-020B
for Preconditioning acc. to JEDEC, Level 2a
TTW Soldering
300
948626-1
(acc. to CECC00802)
5s
Component Cavity
Lead Temperature
Figure 10. Blister Tape
Temperature (°C)
250
200
second
wave
235 °C...260 °C
first wave
94 8670
full line: typical
dotted line: process limits
ca. 2 K/s
ca. 200 K/s
150
100 °C...130 °C
100
2.2
2.0
3.5
3.1
ca. 5 K/s
2 K/s
50
forced cooling
0
0
50
100
150
200
5.75
5.25
250
4.0
3.6
Time (s)
3.6
3.4
Figure 9. Double Wave Solder Profile for Opto Components
Drypack
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
Floor Life
8.3
7.7
1.85
1.65
1.6
1.4
4.1
3.9
4.1
3.9
0.25
2.05
1.95
94 8668
Figure 11. Tape Dimensions in mm for PLCC-2
Floor life (time between soldering and removing from
MBB) must not exceed the time indicated on MBB
label:
Floor Life: 4 weeks
Conditions: Tamb < 30 °C, RH < 60 %
Moisture Sensitivity Level 2a, acc. to J-STD-020B.
Drying
In case of moisture absorption devices should be
baked before soldering. Conditions see J-STD-020 or
Label. Devices taped on reel dry using recommended
conditions 192 h at 40 °C (+ 5 °C), RH < 5 %.
Document Number 81241
Rev. 1.5, 25-Jan-07
www.vishay.com
5
VSMF3710
Vishay Semiconductors
Missing Devices
A maximum of 0.5 % of the total number of components per reel may be missing, exclusively missing
components at the beginning and at the end of the
reel. A maximum of three consecutive components
may be missing, provided this gap is followed by six
consecutive components.
10.4
8.4
120°
4.5
3.5
13.00
12.75
2.5
1.5
62.5
60.0
Identification
De-reeling direction
94 8158
Label:
Vishay
Type
Group
Tape Code
Production
Code
Quantity
14.4 max.
321
329
18857
Figure 14. Dimensions of Reel-GS18
> 160 mm
Tape leader
Cover Tape Removal Force
40 empty
compartments
min. 75 empty
compartments
Carrier leader
Carrier trailer
Figure 12. Beginning and End of Reel
The removal force lies between 0.1 N and 1.0 N at a
removal speed of 5 mm/s. In order to prevent components from popping out of the bliesters, the cover tape
must be pulled off at an angle of 180° with regard to
the feed direction.
The tape leader is at least 160 mm and is followed by
a carrier tape leader with at least 40 empty compartements. The tape leader may include the carrier tape
as long as the cover tape is not connected to the carrier tape. The least component is followed by a carrier
tape trailer with a least 75 empty compartements and
sealed with cover tape.
10.0
9.0
120°
4.5
3.5
2.5
1.5
13.00
12.75
63.5
60.5
Identification
Label:
Vishay
Type
Group
Tape Code
Production
Code
Quantity
180
178
14.4 max.
94 8665
Figure 13. Dimensions of Reel-GS08
www.vishay.com
6
Document Number 81241
Rev. 1.5, 25-Jan-07
VSMF3710
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 81241
Rev. 1.5, 25-Jan-07
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1