PJD09N03 25V N-Channel Enhancement Mode MOSFET TO-252 FEATURES • RDS(ON), VGS@10V,IDS@30A=9mΩ • RDS(ON), [email protected],IDS@30A=12mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Voltage and Current • Pb free product : 99% Sn above can meet RoHS environment substance directive request MECHANICALDATA • Case: TO-252 Molded Plastic • Terminals : Solderable per MIL-STD-202,Method 208 • Marking : 09N03 Drain Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R S ym b o l Li mi t U ni t s D r a i n- S o ur c e Vo l t a g e VD S 25 V G a t e - S o ur c e Vo l t a g e VGS +20 V ID 50 A ID M 240 A PD 45 26 W TJ , TS T G -5 5 to + 1 5 0 Avalanche Energy with Single Pulse ID=23A, VDD=25V, L=0.5mH EAS 130 Junction-to-Case Thermal Resistance RθJ C 2 .8 O C /W Junction-to Ambient Thermal Resistance(PCB mounted)2 RθJ A 50 O C /W C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt 1) M a xi m um P o w e r D i s s i p a t i o n O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e TA = 2 5 O C TA = 7 5 O C O C mJ Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 10 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-MAY.29.2006 PAGE . 1 PJD09N03 ELECTRICALCHARACTERISTICS P a ra me te r S ym b o l Te s t C o n d i t i o n M i n. Ty p . M a x. U ni t s D r a i n- S o ur c e B r e a k d o w n Vo l t a g e BVD SS V G S = 0 V , ID = 2 5 0 u A 25 - - V G a t e Thr e s ho l d Vo l t a g e V G S (th) V D S = V G S , ID = 2 5 0 u A 1 - 3 V D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e RD S (o n) VG S =4.5V, ID =30A - 9 .5 1 2 .0 D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e RD S (o n) VG S =10V, ID =30A - 6.5 9.0 Ze r o G a t e Vo l t a g e D r a i n C ur r e nt ID S S VD S =25V, VG S =0V - - 1 uA Gate Body Leakage IG S S V G S =+2 0 V, V D S =0 V - - +100 nA Forward Transconductance g fS V D S = 1 0 V , ID = 1 5 A 25 - - S V D S = 1 5 V , ID = 1 5 A , V G S = 5 V - 1 6 .0 - - 2 7 .5 - - 3 .5 - S ta ti c mΩ Dynamic To t a l G a t e C h a r g e Qg nC V D S = 1 5 V , ID = 1 5 A V G S =10V G a t e - S o ur c e C ha r g e Qg s G a t e - D r a i n C ha r g e Qg d - 7 .2 - Tu r n - O n D e l a y Ti m e Td ( o n ) - 10.0 13.0 - 11.0 14.0 - 35 45 Tu r n - O n R i s e Ti m e trr Tu r n - O f f D e l a y Ti m e VD D =15V , RL =15Ω ID =1A , VG E N =10V RG =3.6Ω td (o ff) ns Tu r n - O f f F a l l Ti m e tf - 11 . 2 1 5 .5 In p u t C a p a c i t a n c e Ciss - 1250 - O ut p ut C a p a c i t a nc e Coss - 240 - R e v e r s e Tr a n s f e r C a p a c i t a n c e C rs s - 185 - V D S =1 5 V, V G S =0 V f=1 .0 MHZ pF S o ur c e - D r a i n D i o d e M a x. D i o d e F o r w a r d C ur r e nt D i o d e F o rwa rd Vo lta g e Is - - - 30 A VSD IS = 3 0 A , V G S = 0 V - 0 .9 4 1 .2 V V DD Switching Test Circuit V IN V DD Gate Charge Test Circuit RL V GS RL V OUT RG 1mA RG STAD-MAY.29.2006 PAGE . 2 PJD09N03 Typical Characteristics Curves (TA=25OC,unless otherwise noted) 80 ID - Drain-to-Source Current (A) 80 60 ID - Drain Source Current (A) V GS=10V, 6.0V, 5.0V, 4.5V, 4.0V 3.5V 40 3.0V 20 2.5V 0 V DS=10V 60 40 T J=125 C O 20 1 2 3 4 5 1.5 VDS - Drain-to-Source Voltage (V) 3 3.5 4 50 R DS(ON) - On-Resistance (m W ) 15 V GS=4.5V 10 V GS=10V 5 0 4.5 I D=30A 40 30 20 o C C T125 J =125 O 10 =25oC TTJJ=25 C O 0 0 20 40 60 80 2 4 6 8 10 V GS - Gate-to-Source Voltage (V) ID - Drain Current (A) FIG.3- On Resistance vs Drain Current 1.4 2.5 FIG.2- Transfer Characteristic 20 1.6 2 V GS - Gate-to-Source Voltage (V) Fig. 1-TYPICAL FORWARD CHARACTERISTIC FIG.1- Output Characteristic R DS(ON) - On-Resistance (m W ) O O 0 0 RDS(ON) - On-Resistance(Normalized) T J=-55 C T J=25 C FIG.4- On Resistance vs Gate to Source Voltage V GS=10V I D=30A 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 o TJ - Junction Temperature ( C) FIG.5- On Resistance vs Junction Temperature STAD-MAY.29.2006 PAGE . 3 PJD09N03 V GS - Gate-to-Source Voltage (V) 10 Vgs Qg Qsw Vgs(th) V DS=15V I D=15A 8 6 4 2 0 0 Qg(th) Qgs 5 Qg Qgd 1.1 1 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (o C) IS - Source Current (A) 25 30 29 I D=250uA 28 27 26 25 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (o C) Fig.8 - Threshold Voltage vs Temperature 100 20 Fig.7 - Gate Charge BVDSS - Breakdown Voltage (V) Vth - G-S Threshold Voltage (NORMALIZED) I D=250uA 1.2 15 Qg - Gate Charge (nC) Fig.6 - Gate Charge Waveform 1.3 10 Fig.9 - Breakdown Voltage vs Junction Temperature V GS =0V 10 T J=125 OC T J=25 OC 1 T J=-55 OC 0.1 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) Fig.10 - Source-Drain Diode Forward Voltage LEGALSTATEMENT Copyright PanJit International, Inc 2006 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-MAY.29.2006 PAGE . 4