PJ4812 30V N-Channel Enhancement Mode MOSFET SOIC-08 FEATURES • RDS(ON), VGS@10V,IDS@8A=17mΩ • RDS(ON), [email protected],IDS@6A=34mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters • Fully Characterized Avalanche Voltage and Current • Pb free product : 99% Sn above can meet RoHS environment substance directive request MECHANICALDATA • Case: SOIC-08 Package • Terminals : Solderable per MIL-STD-750D,Method 1036.3 • Marking : 4812 PIN Assignment 8 7 6 5 1 2 3 4 1. Source 1 2. Gate 1 3. Source 2 4. Gate 2 5. Drain 2 6. Drain 2 7. Drain 1 8. Drain 1 ABSOLUTE MAXIMUM RATINGS (TC=25oC unless otherwise noted ) PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS +20 V ID 8 A Pulsed Drain Current (1) I DM 32 A Avalanche Energy L=0.1mH,I D=8A,VDD=25V EAS 3.2 mJ Continous Drain Current Power Dissipation TC=25oC TC=25oC o TC=75 C Operating Junction and Stroage Temperature Range Junction-to-Ambient Thermal Resistance (PCB Mounted)2 PD 2.4 W 1.2 TJ,TSTG -55 to +175 RΘJA 62.5 o o C C/W Note : 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 10 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE December 01.2009-REV.00 PAGE . 1 PJ4812 E L E C T R IC A L C H A R A C T E R IS TIC S ( T C = 2 5 o C , U n l e s s O t h e r w i s e N o t e d ) PA RA M E TE R S YM B O L T E S T C O N D IT IO N S M IN . T YP. MAX. U N IT 30 - - V 1 - 3 V - 15 17 mΩ - 26 34 mΩ V D S = 0 V , V GS = + 2 0 V - - +10 0 nA V DS= 2 4 V, V GS= 0 V - - 1 µA V D S = 2 4 V , V GS = 0 V , T J = 1 2 5 oC - - 25 µA V DS= 1 0 V,V GS= 1 0 V 8 - - A 10 - - S - 7.0 - nC - 1 4.2 - nC - 1 .22 - nC S TA T IC V (BR)D S S V GS = 0 V, I G a t e Thr e s ho ld Vo lt a g e V GS (TH) V D S = V GS , I D r a i n - S o ur c e O n- s t a t e R e s i s t a nc e R D S ( ON) D r a i n- S o ur c e B r e a k d o wn Vo lta g e D=25 0µA D=250µA V GS= 1 0 V, I V GS= 5 V,I Gate-B ody Leakage I GS S Ze ro Ga te Vo lta g e D ra i n C ur r e n t I DSS O n- S t a t e D r a i n C u r r e nt I F o r w a r d Tr a n s c o n d u c t a n c e D (ON) V DS= 5 V,I g fs D=8A D=6 A D=8 A D YN A M IC V D S = 1 5 V , V GS = 5 V , I To t a l G a t e C h a r g e D=8A QG V D S = 1 5 V , V GS = 1 0 V I D=8A G a t e -S o ur c e C ha rg e Q GS G a t e -D r a i n C ha rg e QGD - 3.44 - nC Tu r n - O n D e l a y Ti m e td (o n) - 7.8 - nS - 11 . 6 - nS - 28 .8 - nS tf - 5.6 - nS Inp u t C a p a c i t a nc e C IS S - 520 - pF O ut p u t C a p a c i t a n c e C OS S - 11 2 - pF R e v e r s e Tr a n s f e r C a p a c i t a n c e C RSS - 98 - pF - 2.0 - Ω - - 2.3 A - - 1.2 V R i s e Ti m e tr Tu r n - O f f D e l a y Ti m e td (off) F a l l Ti m e G a t e R e s i s ta nc e Rg V D S = 1 5 V , I D = 1 A , V GS = 1 0 V R GS = 6 Ω V GS = 0 V , V D S = 1 5 V f=1 MHz V GS = 1 5 m V , V D S = 0 V , f = 1 M H z S O U R C E - D R A IN D IO D E R A T IN G S A N D C H A R A C T E R IS T IC S C o n t i n u o us C u r r e n t I F o rwa rd Vo lta g e S I V SD F = 2 . 3 A , V GS = 0 V NOTE : Plus Test: Pluse Width < 300us, Duty Cycle < 2%. V DD Switching Test Circuit V IN V DD Gate Charge Test Circuit RL V GS RL V OUT RG 1mA RG December 01.2009-REV.00 PAGE . 2 PJ4812 40 40 VGS= 10V, 6V ID - Drain Source Current (A) ID - Drain-to-Source Current (A) Typical Characteristics Curves ( Ta=25℃ ℃, unless otherwise noted) 5.0V 30 4.5V 20 4.0V 10 3.5V 3.0V 0 VDS =10V 30 20 TJ = 125oC 10 25oC 0 0 1 2 3 4 5 1.5 2 2.5 3 3.5 4 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) RDS(ON) - On-Resistance (mΩ Ω) RDS(ON) - On-Resistance (mΩ Ω) 60 50 40 VGS = 5.0V 30 VGS=10.0V 20 10 0 0 10 20 4.5 Fig.2 Transfer Characteristric Fig.1 Output Characteristric 30 90 ID =8A 80 70 60 125oC 50 40 30 20 TJ =25oC 10 0 40 2 4 6 8 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Fig.3 On Resistance vs Drain Current 1.8 10 Fig.4 On Resistance vs Gate to Source Voltage 1000 VGS =10 V ID =8.0A 1.6 C - Capacitance (pF) RDS(ON) - On-Resistance(Normalized) -55oC 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.5 On Resistance vs Junction Temperature December 01.2009-REV.00 f = 1MHz VGS = 0V 800 Ciss 600 400 Coss 200 Crss 0 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) Fig.6 Capacitance PAGE. 3 PJ4812 Typical Characteristics Curves ( Ta=25℃ ℃, unless otherwise noted) 100 VDS =15 V ID =8.0A 8 VGS = 0V IS - Source Current (A) VGS - Gate-to-Source Voltage (V) 10 6 4 2 10 25oC 0.1 0.01 0 0 4 8 12 0.2 16 Fig. 7 Gate Charge Waveform Vth - G-S Threshold Voltage (Normalized) 34 33 32 31 30 29 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.9 Breakdown Voltage vs Junction Temperature December 01.2009-REV.00 0.6 0.8 1 1.2 1.4 Fig.8 Source-Drain Diode Forward Voltage 36 35 0.4 VSD - Source-to-Drain Voltage (V) Qg - Gate Charge (nC) BVDSS - Breakdown Voltage (V) -55oC TJ = 125oC 1 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.10 Threshold Voltage vs Junction Temperature PAGE. 4 PJ4812 MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 3K per 13" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2010 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. December 01.2009-REV.00 PAGE . 5