SBP13007-X High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA B C General Description E TO220 This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply and inverters motor controls Absolute Maximum Ratings Symbol Parameter Test Conditions Value Units VCES Collector-Emitter Voltage VBE = 0 600 V VCEO Collector-Emitter Voltage IB = 0 400 V VEBO IC = 0 9.0 V IC Emitter-Base Voltage Collector Current 12 A ICP Collector pulse Current 24 A IB Base Current 6.0 A IBM Base Peak Current 12 A PC Total Dissipation at TC = 25℃ 100 W TJ Operation Junction Temperature 150 ℃ TSTG Storage Temperature - 65 ~ 150 ℃ Value Units 1.25 ℃/W 40 ℃/W tP = 5ms Thermal Characteristics Symbol Parameter RθJc Thermal Resistance Junction to Case RθJA Thermal Resistance Junction to Ambient Jan 2008. Rev. 0 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. T01-3 SBP13007-X Electrical Characteristics (TC=25℃ unless otherwise noted) Value Symbol VCEO(sus) Parameter Collector-Emitter Breakdown Voltage Test Conditions Ic=10mA,Ib=0 Min Typ Max 400 - - Collector-Emitter Saturation Voltage Ic=8.0A,Ib=1.6A - - Base-Emitter Saturation Voltage I Ic=5.0A,Ib=1.0A 1.5 V 3.0 Ic=12A,Ib=3.0A VBE(sat) V 1.0 Ic=5.0A,Ib=1.0A VCE(sat) Units 1.2 - - V 1.6 Ic=8.0A,Ib=1.6A Collector-Base Cutoff Current ICBO hFE (Vbe=-1.5V) DC Current Gain Vcb=600V - - 100 Vce=5V,Ic=5.0A 8 - 40 Vce=5V, Ic=8.0A 6 - - 1.5 3.0 0.17 0.4 0.8 2.0 0.04 0.1 0.8 2.5 0.05 0.15 ts tf Resistive Load Storage Time Fall Time VCC=125V , Ic=6.0A IB1=1.6A , IB2=-1.6A Tp=25㎲ ts tf Inductive Load Storage Time Fall Time VCC=15V ,Ic=5A IB1=1.6A , Vbe(off)=5V L=0.35mH,Vclamp=300V ts tf Inductive Load Storage Time Fall Time VCC=15V ,Ic=1A IB1=0.4A , Vbe(off)=5V L=0.2mH,Vclamp=300V Tc=100℃ - - nA ㎲ ㎲ ㎲ Note: Pulse Test : Pulse width 300, Duty cycle 2% 2/5 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. SBP13007-X Fig. 1 DC Current Gain Fig. 3 Base--Emitter Saturation Voltage Fig.5 Power Derating Fig. 2 Collector-Emitter Saturation Voltage Fig. 4 Safe Operation Area Fig.6 Reverse Biased Safe Operation Area 3/5 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. SBP13007-X Resistive Load Switching Test Circuit Inductive Load Switching & RBSOA Test Circuit 4/5 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. SBP13007-X TO-220 Package Dimension Unit: mm 5/5 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.