SB120 thru SB160 Vishay Semiconductors formerly General Semiconductor Schottky Barrier Rectifier Reverse Voltage 20 to 60V Forward Current 1.0A DO-204AL (DO-41) Features 1.0 (25.4) MIN. • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Low power loss, high efficiency • For use in low voltage high frequency inverters, free wheeling, and polarity protection applications • Guardring for overvoltage protection 0.107 (2.7) 0.080 (2.0) DIA. 0.205 (5.2) 0.160 (4.1) Dimensions in inches and (millimeters) Mechanical Data Case: JEDEC DO-204AL molded plastic body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds 0.375” (9.5mm) lead length, 5lbs. (2.3kg) tension Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.012 ounce, 0.34 gram 1.0 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) DIA. Dimensions in inches and (millimeters) Maximum Ratings and Thermal Characteristics (T Parameter Symbol SB120 A = 25°C unless otherwise noted) SB130 SB140 SB150 SB160 Unit Maximum repetitive peak reverse voltage VRRM 20 30 40 50 60 V Maximum RMS voltage VRMS 14 21 28 35 42 V Maximum DC blocking voltage VDC 20 30 40 50 60 V Maximum average forward rectified current at 0.375” (9.5mm) lead length (See Fig. 1) IF(AV) 1.0 A Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 50 A (1) RθJA RθJL 50 15 °C/W Typical thermal resistance Operating junction temperature range TJ Storage temperature range Electrical Characteristics TSTG –65 to +150 –65 to +150 °C °C (TA = 25°C unless otherwise noted) Maximum instantaneous forward voltage at 1.0A (2) Maximum instantaneous reverse current at rated DC blocking voltage (2) –65 to +125 VF TA = 25°C TA = 100°C IR 0.48 0.65 0.5 10 5.0 V mA Notes: (1) Thermal resistance junction to lead P.C.B. mounted 0.375” (9.5mm) lead length (2) Pulse test: 300µs pulse width, 1% duty cycle Document Number 88715 04-Jun-03 www.vishay.com 1 SB120 thru SB160 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 1 - Forward Current Derating Curve 50 Resistive or Inductive Load 0.375" (9.5mm) Lead Length 0.75 Peak Forward Surge Current (A) Average Forward Current (A) 1.0 SB150 & SB160 SB120 – SB140 0.5 0.25 0 TJ = TJ max. 8.3ms Single Half Sine-Wave (JEDEC Method) 40 30 20 10 0 25 0 50 75 100 125 150 175 1 Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Characteristics 100 TJ = 125°C 10 Pulse Width = 300µs 1% Duty Cycle TJ = 150°C 1.0 TJ = 25°C 0.1 SB120 – SB140 SB150 & SB160 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Instantaneous Reverse Current (mA) Instantaneous Forward Current (A) 50 SB120 – SB140 SB150 & SB160 10 TJ = 125°C 1.0 0.1 1.6 TJ = 75°C 0.01 TJ = 25°C 0.001 0 20 40 60 80 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance Transient Thermal Impedance (°C/W) TJ = 25°C f = 1.0 MHZ Vsig = 50mVp-p 100 SB120 – SB140 SB150 & SB160 10 0.1 1 10 Reverse Voltage (V) www.vishay.com 2 100 100 400 Junction Capacitance (pF) 100 10 Number of Cycles at 60 HZ Lead Temperature (°C) 100 10 1 0.1 0.01 0.1 1 10 100 Pulse Duration (sec.) Document Number 88715 04-Jun-03