RGP02-12E THRU RGP02-20E Vishay Semiconductors formerly General Semiconductor Case Style GP10E Glass Passivated Junction Fast Switching Rectifier Reverse Voltage 1200 to 2000V Forward Current 0.5A Features d* e t en t a P • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • High temperature metallurgically bonded construction • Capable of meeting environmental standards of MIL-S-19500 • For use in high frequency rectifier circuits • Fast switching for high efficiency • Cavity-free glass passivated junction • 0.5 Ampere operation at TA=55°C with no thermal runaway • Typical IR less than 0.2µA • High temperature soldering guaranteed: 350°C/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension 1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA. 0.205 (5.2) 0.160 (4.1) ® 1.0 (25.4) MIN. Mechanical Data 0.026 (0.66) 0.023 (0.58) DIA. Dimensions in inches and (millimeters) *Glass-plastic encapsulation technique is covered by Patent No. 3,996,602, and brazed-lead assembly by Patent No. 3,930,306 Case: Molded plastic over glass body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.012 oz., 0.3 g Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified. RGP02 RGP02 RGP02 RGP02 RGP02 RGP02 Symbols -12E -14E -16E -17E -18E -20E Parameter Units Maximum repetitive peak reverse voltage VRRM 1200 1400 1600 1700 1800 2000 V Maximum RMS voltage VRMS 840 980 1120 1190 1260 1400 V Maximum DC blocking voltage VDC 1200 1400 1600 1700 1800 2000 V Maximum average forward rectified current 0.375" (9.5mm) lead length at TA=55°C IF(AV) 0.5 A Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 20 A RΘJA RΘJL 65 30 °C/W TJ, TSTG -65 to +175 °C Typical thermal resistance (1) Operating junction and storage temperature range Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Maximum instantaneous forward voltage at 0.1A VF 1.8 V IR 5.0 50 µA Maximum reverse recovery time at IF=0.5A, IR=1.0A, Irr=0.25A trr 300 ns Typical junction capacitance at 4.0V, 1MHz CJ 5.0 pF Maximum DC reverse current at rated DC blocking voltage TA=25°C TA=125°C Note: (1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5mm) lead length, P.C.B. mounted Document Number 88699 08-Apr-04 www.vishay.com 1 RGP02-12E THRU RGP02-20E Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Fig. 2 — Maximum Non-Repetitive Peak Forward Surge Current 0.5 25 0.4 0.3 0.2 0.1 20 15 10 5 0.375" (9.5mm) Lead Length 0 0 25 75 50 100 150 125 Ambient Temperature (°C) Number of Cycles at 60 HZ Fig. 3 — Typical Instantaneous Forward Characteristics Fig. 4 — Typical Reverse Characteristics Instantaneous Reverse Current (µA) 20 0.1 TJ = 25°C Pulse Width = 300µs 1% Duty Cycle 0.01 0.001 0.8 100 10 1 175 1 Instantaneous Forward Current (A) TJ = TJ max. 8.3ms Single Half Sine-Wave (JEDEC Method) Resistive or Inductive Load Peak Forward Surge Current (A) Average Forward Rectified Current (A) Fig. 1 — Forward Current Derating Curve 10 TJ = 125°C 1 TJ = 75°C 0.1 TJ = 25°C 0.01 1.0 1.2 1.4 1.6 1.8 2 2.4 2.2 Instantaneous Forward Voltage (V) 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 5 — Typical Junction Capacitance 10 Junction Capacitance (pF) TJ = 25°C f = 1.0 MHZ Vsig = 50mVp-p 1 1 10 100 Reverse Voltage (V) www.vishay.com 2 Document Number 88699 08-Apr-04