JMNIC 2SB1254

JMnic
Product Specification
2SB1254
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-3PFa package
・Optimum for 60W HiFi output
・High foward current transfer ratio
・Low collector saturation voltage
・Complement to type 2SD1894
APPLICATIONS
・Power amplification
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-160
V
VCEO
Collector-emitter voltage
Open base
-140
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-7
A
ICP
Collector current-peak
-12
A
PC
Collector power dissipation
TC=25℃
70
Ta=25℃
3
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
2SB1254
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO
Collector-emitter voltage
IC=-30mA ; IB=0
VCEsat
Collector-emitter saturation voltage
IC=-6A ;IB=-6mA
-2.5
V
VBEsat
Base-emitter saturation voltage
IC=-6A ;IB=-6mA
-3.0
V
ICBO
Collector cut-off current
VCB=-160V; IE=0
-100
μA
ICEO
Collector cut-off current
VCE=-140V; IB=0
-100
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-100
μA
hFE-1
DC current gain
IC=-1A ; VCE=-5V
2000
hFE -2
DC current gain
IC=-6A ; VCE=-5V
5000
Transition frequency
IC=-0.5A ; VCE=-10V;f=1MHz
fT
-140
UNIT
V
30000
20
MHz
1.0
μs
1.5
μs
1.2
μs
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-6A; VCC=50V
IB1=-IB2=-6mA
2
JMnic
Product Specification
2SB1254
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3