6N1135/6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated FEATURES • Operating temperature from - 55 °C to + 110 °C • Isolation test voltages: 5300 VRMS • TTL compatible NC 1 8 C (VCC) • High bit rates: 1.0 MBd A 2 7 B (VB) • Bandwidth 2.0 MHz C 3 6 C (VO) NC 4 5 E (GND) • Open-collector output • External base wiring possible i179081 • Lead (Pb)-free component DESCRIPTION The 6N1135 and 6N1136 are 110 °C rated optocouplers with a GaAIAs infrared emitting diode, optically coupled with an integrated photo detector which consists of a photo diode and a high-speed transistor in a DIP-8 plastic package. Signals can be transmitted between two electrically separated circuits up to frequencies of 2.0 MHz. The potential difference between the circuits to be coupled should not exceed the maximum permissible reference voltages. • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC AGENCY APPROVALS • UL1577, file no. E52744 system code H or J • DIN EN 60747-5-5 • CUL - file no. E52744, equivalent to CSA bulletin 5A ORDER INFORMATION PART 6N1135 6N1136 6N1135-X007 6N1136-X006 6N1136-X007 6N1136-X009 REMARKS CTR ≥ 7 %, DIP-8 CTR ≥ 19 %, DIP-8 CTR ≥ 7 %, SMD-8 (option 7) CTR ≥ 19 %, DIP-8 400 mil (option 6) CTR ≥ 19 %, SMD-8 (option 7) CTR ≥ 19 %, SMD-8 (option 9) Note For additional information on the available options refer to option information. ABSOLUTE MAXIMUM RATINGS PARAMETER (1) TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 5.0 V Forward current IF 25 mA t = 1.0 ms, duty cycle 50 % IFM 50 mA t ≤ 1.0 µs, 300 pulses/s IFSM 1.0 A Rth 700 K/W Pdiss 45 mW Supply voltage VCC - 0.5 to 15 V Output voltage VO - 0.5 to 15 V VEBO 5.0 V IO 8.0 mA 16 mA IB 5.0 mA 300 K/W Pdiss 100 mW INPUT Peak forward current Maximum surge forward current Thermal resistance Power dissipation Tamb = 70 °C OUTPUT Emitter base voltage Output current Maximum Output current Base current Thermal resistance Power dissipation www.vishay.com 160 Tamb = 70 °C For technical questions, contact: [email protected] Document Number: 83909 Rev. 1.6, 07-May-08 6N1135/6N1136 High Speed Optocoupler, 1 MBd, Vishay Semiconductors Photodiode with Transistor Output, 110 °C Rated ABSOLUTE MAXIMUM RATINGS PARAMETER (1) TEST CONDITION SYMBOL VALUE UNIT t = 1.0 s VISO 5300 VRMS Storage temperature range Tstg - 55 to + 125 °C Ambient temperature range Tamb - 55 to + 100 °C Tsld 260 °C COUPLER Isolation test voltage (between emitter and detector climate per DIN 50014 part 2, Nov. 74) Soldering temperature (2) max. ≤ 10 s, dip soldering ≥ 0.5 mm from case bottom Notes (1) T amb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. 1.6 1.9 UNIT INPUT Forward voltage IF = 1.6 mA VF Breakdown voltage IR = 10 µA VBR Reverse current 5.0 V V VR = 5.0 V IR 0.5 VR = 0 V, f = 1.0 MHz CI 125 pF IF = 1.6 mA ΔVF/ΔTA - 1.7 mV/°C Logic low supply current IF = 1.6 mA, VO = open, VCC = 15 V ICCL 150 µA Logic high supply current IF = 0 mA, VO = open, VCC = 15 V ICCH 0.01 1 µA Capacitance Temperature coefficient, forward voltage 10 µA OUTPUT Output voltage, output low Output current, output high IF = 16 mA, VCC = 4.5 V, IO = 1.1 mA, 6N1135 VOL 0.1 0.4 V IF = 16 mA, VCC = 4.5 V, IO = 2.4 mA, 6N1136 VOL 0.1 0.4 V IF = 0 mA, VO = VCC = 5.5 V IOH 3.0 500 nA IF = 0 mA, VO = VCC = 15 V IOH 0.01 1 µA f = 1.0 MHz CIO 0.6 pF COUPLER Capacitance (input to output) Current transfer ratio IF = 16 mA, VO = 0.4 V, VCC = 4.5 V 6N1135 CTR 7.0 16 % 6N1136 CTR 19 35 % IF = 16 mA, VO = 0.5 V, VCC = 4.5 V 6N1135 CTR 5.0 % 6N1136 CTR 15 % Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Document Number: 83909 Rev. 1.6, 07-May-08 For technical questions, contact: [email protected] www.vishay.com 161 6N1135/6N1136 High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated Vishay Semiconductors SWITCHING CHARACTERISTICS PARAMETER High to low Low to high TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT IF = 16 mA, VCC = 5.0 V, RL = 4.1 kΩ 6N1135 tPHL 0.3 1.5 µs IF = 16 mA, VCC = 5.0 V, RL = 1.9 kΩ 6N1136 tPHL 0.2 0.8 µs IF = 16 mA, VCC = 5.0 V, RL = 4.1 kΩ 6N1135 tPLH 0.3 1.5 µs IF = 16 mA, VCC = 5.0 V, RL = 1.9 kΩ 6N1136 tPLH 0.2 0.8 µs Pulse generator IF Z O = 50 Ω t r ,t f = 5 ns duty cycle 10 % t ≤ 100 µs t 5V 1 8 2 7 3 6 VO 4 5 CL 15 pF VO IF IF Monitor 5V RL 1.5 V VOL t ı 100 Ω tPHL tPLH i6n135_01 Fig. 1 - Switching Times COMMON MODE TRANSIENT IMMUNITY PARAMETER High Low TEST CONDITION PART SYMBOL IF = 0 mA, VCM = 10 VP-P, VCC = 5.0 V, RL = 4.1 kΩ 6N135 |CMH| MIN. 1000 TYP. MAX. UNIT V/µs IF = 0 mA, VCM = 10 VP-P, VCC = 5.0 V, RL = 1.9 kΩ 6N136 |CMH| 1000 V/µs IF = 16 mA, VCM = 10 VP-P, VCC = 5.0 V, RL = 4.1 kΩ 6N135 |CML| 1000 V/µs IF = 16 mA, VCM = 10 VP-P, VCC = 5.0 V, RL = 1.9 kΩ 6N136 |CML| 1000 V/µs VCM 10 V IF 1 8 2 7 90 % 10 % 5V 10 % A B 3 6 4 5 VFF 90 % 0V RL VO VO t tr tf 5V A: IF = 0 mA +VCM Pulse generator Z O = 50 Ω t r,t f = 8 ns VO VOL i6n135_02 t B: IF = 16 mA t Fig. 2 - Common-Mode Interference Immunity www.vishay.com 162 For technical questions, contact: [email protected] Document Number: 83909 Rev. 1.6, 07-May-08 6N1135/6N1136 High Speed Optocoupler, 1 MBd, Vishay Semiconductors Photodiode with Transistor Output, 110 °C Rated SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL MIN. Climatic classification (according to IEC 68 part 1) TYP. MAX. UNIT 55/110/21 Pollution degree (DIN VDE 0109) 2.0 Comparative tracking index per DIN IEC112/VDE 0303 part 1, group IIIa per DIN VDE 6110 CTI 175 VIOTM VIOTM 8000 V VIORM VIORM 630 V RIO 1012 Ω RIO 1011 VIO = 500 V, Tamb = 25 °C Isolation resistance VIO = 500 V, Tamb = 100 °C PSI 399 Ω PSI 500 mA ISI ISI 300 mW TSI TSI 175 Creepage distance °C 7.0 mm Clearance distance 7.0 mm Insulation thickness 0.2 mm Note As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 2.3 V F - Forward Voltage (V) 1.9 1.7 1.5 1.3 25 °C 1.1 50 °C 110 °C 0.9 0.7 0.01 17585 I C - Collector Current (mA ) - 55 °C 2.1 0.10 1.00 10.00 100.00 IF - Forward Current (mA ) Fig. 3 - Forward Voltage vs. Forward Current Document Number: 83909 Rev. 1.6, 07-May-08 17586 12 11 10 9 8 7 6 5 4 3 2 1 0 IF = 25 mA 20 mA 15 mA 10 mA 5 mA Tamb = 25 C, VCC= 5 V, non-saturated 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 VCE - Collector Emitter Voltage (V) Fig. 4 - Collector Current vs. Collector Emitter Voltage For technical questions, contact: [email protected] www.vishay.com 163 6N1135/6N1136 High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated Vishay Semiconductors 2.50 8 6 15 mA 5 4 10 mA 3 2 5 mA 1 0 0.0 1 mA 0.1 0.2 0.3 0.4 0.5 VCE - Collector Emitter Voltage (V) 17629 Fig. 5 - Collector Current vs. Collector Emitter Voltage 2.00 5 mA 1.75 1.50 10 mA 1.25 1.00 0.75 0.50 0.25 16 mA Normalized to IF = 16 mA, Tamb = 25 C, VCC = 5 V VO = 0.4 V, saturated 0.00 - 55 - 35 - 15 5 25 45 65 85 105 125 Tamb - Ambient Temperature (°C) 17631 Fig. 8 - Normalized Current Transfer Ratio vs. Ambient Temperature 1000 7 IF = 20 mA 100 VCC = VCE = 15 V 10 1 VCC = VCE = 5 V 0.1 0.01 - 55 - 35 - 15 5 Fig. 6 - Collector Emitter Dark Current vs. Ambient Temperature 4 3 2 17587 1 mA 0 - 55 - 35 - 15 5 25 45 65 85 105 125 Tamb - Ambient Temperature (°C) IF = 1 mA 1.8 IF = 1 mA 1.6 1.4 1.2 5 mA 1.0 10 mA 0.8 0.6 Normalized to IF = 10 mA, Tamb = 25 C, VCC = 5 V VO = 0.4 V, saturated 0.0 - 55 - 35 - 15 5 25 45 65 85 105 125 Tamb - Ambient Temperature (°C) Fig. 7 - Normalized Current Transfer Ratio vs. Ambient Temperature www.vishay.com 164 2 mA 2.0 CTR Norm - Normalized CTR CTR Norm - Normalized CTR 17630 VCC = 5 V, VO = 0.4 V, saturated Fig. 9 - Output Current vs. Temperature 1.8 0.2 10 mA 1 2.0 0.4 16 mA 5 25 45 65 85 105 125 Tamb - Ambient Temperature (°C) 17590 6 I C - Collector Current (mA) ICE0 - Collector Emitter Leakage Current (nA) IF = 1 mA 2.25 20 mA CTR Norm - Normalized CTR I C - Collector Current (mA) 7 IF = 25 mA Tamb = 25 C, VCC= 5 V, saturated 17632 1.6 5 mA 1.4 1.2 10 mA 1.0 0.8 0.6 0.4 0.2 Normalized to IF = 10 mA, Tamb = 25 C, VCC = 5 V VO = 5 V, non–saturated 0.0 - 55 - 35 - 15 5 25 45 65 85 105 125 Tamb - Ambient Temperature (°C) Fig. 10 - Normalized Current Transfer Ratio vs. Ambient Temperature For technical questions, contact: [email protected] Document Number: 83909 Rev. 1.6, 07-May-08 6N1135/6N1136 High Speed Optocoupler, 1 MBd, Vishay Semiconductors Photodiode with Transistor Output, 110 °C Rated 100.00 2.0 IF = 1 mA 17633 - 55 °C 5 mA 1.6 1.4 1.2 1.0 10 mA 0.8 16 mA 0.6 0.4 0.2 Normalized to IF = 16 mA, Tamb = 25 C, VCC = 5 V VO = 5 V, non–saturated Ip - Photo Current ( A) CTR Norm - Normalized CTR 1.8 10.00 50 °C 0.10 0.01 0.01 17636 1.4 0.9 - 55 ºC 0.8 Normalized to IB = 20 μA, Tamb = 25 °C VO = 5 V, non saturated 0.5 0.10 17634 0 °C 0.1 25 °C 0.01 0.001 1.00 10.00 IB - Base Current (mA) 100.00 0.0001 0.01 17637 110 °C VCC = 5 V normalized to IF = 16 mA 0.10 1.00 10.00 IF - Forward Current (mA) 100.00 3000 2.0 110 °C 1.8 VCC = VO = 5 V, 2500 t - Switching Time (ns) 50 °C 1.6 Normalized h FE 50 °C Fig. 15 - Photo Current vs. Forward Current Fig. 12 - Normalized hFE vs. Base Current 1.4 1.2 25 °C 1.0 0 °C - 55 °C 0.6 0.2 - 55 °C 1 Norm. Photo Current Normalized h FE 25 ºC 0 ºC 1.0 0.4 100.00 10 1.1 0.8 0.10 1.00 10.00 IF - Forward Current (mA) 110 ºC 50 ºC 1.2 0.6 110 °C Fig. 14 - Photo Current vs. Forward Current Fig. 11 - Normalized Current Transfer Ratio vs. Ambient Temperature 0.7 25 °C 1.00 VCC = 5 V 0.0 - 55 - 35 - 15 5 25 45 65 85 105 125 Tamb - Ambient Temperature (°C) 1.3 0 °C Normalized to IB = 20 μA, Tamb = 25 °C VO = 0.4 V, saturated 0.0 0.10 17635 1.00 10.00 Fig. 13 - Normalized hFE vs. Base Current Document Number: 83909 Rev. 1.6, 07-May-08 Tamb = 25 °C 2000 toff 1500 1000 ton 500 0 0.0 100.00 IB - Base Current (mA) IF = 16 mA 17638 0.5 1.0 1.5 2.0 RL - Load Resistance (k Ω) 2.5 Fig. 16 - Switching Time vs. Load Resistance For technical questions, contact: [email protected] www.vishay.com 165 6N1135/6N1136 High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated Vishay Semiconductors 0.6 Small Signal Current Transfer Ratio 25000 VCC = VO = 5 V, IF = 16 mA t - Switching Time (ns) 20000 Tamb = 25 °C toff 15000 10000 5000 ton 0.5 0.4 0.3 0.2 VCC = VO = 5 V, 0.0 0 0 5 10 15 0 20 RL - Load Resistance (kΩ ) 17639 Fig. 17 - Switching Time vs. Load Resistance 17591 tPLH (3 V) 1000 tPLH (1.5 V) 600 tPH L (1.5 V) 400 200 tPH L (3 V) 0 - 55 - 35 - 15 5 25 45 65 85 105 125 Tamb - Ambient Temperature (°C) Fig. 18 - Propagation Delay vs. Ambient Temperature ΔIF/ΔIO/Small Signal Current Transfer Ratio t P - Propagation Delay time (ns) RL = 1.9 kΩ, Tamb = 25 °C 1200 17588 25 0.6 VCC = 5 V, IF = 16 mA 1400 800 5 10 15 20 IF - Forward Current (mA) Fig. 20 - Small Signal CTR vs. Forward Current 1800 1600 RL = 100 Ω, RLED = 50 Ω, Tamb = 25 °C 0.1 (VCC = 5 V, RL = 100 Ω) 0.5 0.4 0.3 0.2 0.1 0 0 5 i6n135_11 10 15 20 25 IF/mA Fig. 21 - Small Signal Current Transfer Ratio vs. Quiescent Input Current 3000 t P - Propagation Delay time (ns) Tamb = 25 °C, VCC = 5 V, 2500 IF = 16 mA, RL = 4.1 kΩ tPLH (3 V) 2000 1500 tPLH (1.5 V) 1000 500 17589 tPHL (1.5 V) tPHL (3 V) 0 - 55 - 35 - 15 5 25 45 65 85 105 125 Tamb - Ambient Temperature (°C) Fig. 19 - Propagation Delay vs. Ambient Temperature www.vishay.com 166 For technical questions, contact: [email protected] Document Number: 83909 Rev. 1.6, 07-May-08 6N1135/6N1136 High Speed Optocoupler, 1 MBd, Vishay Semiconductors Photodiode with Transistor Output, 110 °C Rated PACKAGE DIMENSIONS in inches (millimeters) Pin one ID 4 3 2 1 5 6 7 8 0.255 (6.48) 0.268 (6.81) ISO method A 0.379 (9.63) 0.390 (9.91) 0.030 (0.76) 0.045 (1.14) 0.300 (7.62) typ. 0.031 (0.79) 4° typ. 0.130 (3.30) 0.150 (3.81) 0.050 (1.27) 0.020 (0.51) 0.018 (0.46) 0.022 (0.56) 0.230 (5.84) 10° 0.035 (0.89) 0.110 (2.79) 3° to 9° 0.008 (0.20) 0.100 (2.54) typ. 0.012 (0.30) i178006 Option 6 Option 7 Option 9 0.407 (10.36) 0.391 (9.96) 0.307 (7.8) 0.291 (7.4) 0.300 (7.62) typ. 0.375 (9.53) 0.395 (10.03 ) 0.300 (7.62) ref. 0.028 (0.7) 0.180 (4.6) 0.160 (4.1) 0.315 (8.0) min. 0.014 (0.35) 0.010 (0.25) 0.400 (10.16) 0.430 (10.92) Document Number: 83909 Rev. 1.6, 07-May-08 0.250 (6.35) 0.130 (3.30) 0.331 (8.4) min. 0.406 (10.3) max. 0.0040 (0.102) 0.0098 (0.249) 0.012 (0.30 ) typ. 0.020 (0.51 ) 0.040 (1.02 ) 15° max. 0.315 (8.00) min. For technical questions, contact: [email protected] 18450 www.vishay.com 167 6N1135/6N1136 High Speed Optocoupler, 1 MBd, Vishay Semiconductors Photodiode with Transistor Output, 110 °C Rated OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number: 83909 Rev. 1.6, 07-May-08 For technical questions, contact: [email protected] www.vishay.com 168 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1