FDMS7672AS N-Channel PowerTrench® SyncFETTM 30 V, 42 A, 4 mΩ Features General Description The FDMS7672AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 18 A Max rDS(on) = 4.5 mΩ at VGS = 7 V, ID = 16 A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design Applications 100% UIL tested Synchronous Rectifier for DC/DC Converters RoHS Compliant Notebook Vcore/ GPU low side switch Networking Point of Load low side switch Telecom secondary side rectification Bottom Top Pin 1 S D D D S S G D 5 4 G D 6 3 S D 7 2 S D 8 1 S D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage (Note 4) Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C MOSFET dv/dt EAS Single Pulse Avalanche Energy PD TJ, TSTG Units V ±20 V 42 83 (Note 1a) -Pulsed dv/dt Ratings 30 19 A 90 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 2.6 V/ns 60 mJ 46 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case 2.7 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS7672AS Device FDMS7672AS ©2009 Fairchild Semiconductor Corporation FDMS7672AS Rev.C Package Power 56 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS7672AS N-Channel PowerTrench® SyncFETTM September 2009 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient 30 V ID = 10 mA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA 3.0 V 18 mV/°C On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 10 mA, referenced to 25 °C -5 VGS = 10 V, ID = 18 A 3.2 4.0 VGS = 7 V, ID = 16 A 3.5 4.5 VGS = 4.5 V, ID = 14 A 4.3 5.2 VGS = 10 V, ID = 18 A, TJ = 125 °C 4.1 5.2 VDS = 5 V, ID = 18 A 97 rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.2 1.9 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 2120 2820 pF 735 975 pF 90 135 pF 1.1 2.2 Ω 12 21 ns 5 10 ns 28 44 ns 4 10 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0 V to 10 V 33 46 nC Qg Total Gate Charge 22 nC Gate to Source Gate Charge VGS = 0 V to 4.5 V VDD = 15 V, ID = 18 A 15 Qgs 6.5 nC Qgd Gate to Drain “Miller” Charge 4.0 nC VDD = 15 V, ID = 18 A, VGS = 10 V, RGEN = 6 Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2 A (Note 2) 0.48 0.9 VGS = 0 V, IS = 18 A (Note 2) 0.80 1.3 26 42 ns 26 42 nC IF = 18 A, di/dt = 300 A/µs V Notes: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 50 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3. EAS of 60 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 11 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 16 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. FDMS7672AS Rev.C 2 www.fairchildsemi.com FDMS7672AS N-Channel PowerTrench® SyncFETTM Electrical Characteristics TJ = 25 °C unless otherwise noted ID, DRAIN CURRENT (A) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VGS = 10 V 60 VGS = 4.5 V VGS = 3.5 V VGS = 4 V 30 VGS = 3 V 0 0.0 0.5 1.0 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 12 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 90 VGS = 3 V 10 8 VGS = 3.5 V 6 0 2.0 0 30 60 90 ID, DRAIN CURRENT (A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 12 ID = 18 A VGS = 10 V 1.4 rDS(on), DRAIN TO 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 4.5 V VGS = 4 V 2 1.5 ID = 18 A 8 6 TJ = 125 oC 4 2 100 125 150 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 10 TJ, JUNCTION TEMPERATURE (oC) TJ = 25 oC 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 100 IS, REVERSE DRAIN CURRENT (A) 90 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) VGS = 10 V 4 Figure 1. On-Region Characteristics VDS = 5 V 60 TJ = 125 oC 30 TJ = 25 oC TJ = -55 oC 0 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 1 2 3 VGS = 0 V 10 TJ = 125 oC 1 TJ = 25 oC 0.1 0.01 TJ = -55 oC 0.001 0.0 4 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMS7672AS Rev.C 3 1.2 www.fairchildsemi.com FDMS7672AS N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted 3000 ID = 18 A Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 20 V VDD = 10 V 6 VDD = 15 V 4 1000 Coss 2 0 100 0 5 10 15 20 25 30 50 0.1 35 Figure 7. Gate Charge Characteristics 30 90 10 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 Figure 8. Capacitance vs Drain to Source Voltage 30 TJ = 25 oC TJ = 100 oC TJ = 125 1 0.01 0.1 60 VGS = 10 V 30 VGS = 4.5 V Limited by Package oC o RθJC = 2.7 C/W 1 10 0 25 100 50 75 100 125 150 o Tc, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 3000 P(PK), PEAK TRANSIENT POWER (W) 300 100 ID, DRAIN CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 1000 100 µs 10 1 Crss f = 1 MHz VGS = 0 V 1 ms 10 ms THIS AREA IS LIMITED BY rDS(on) 0.1 0.01 0.01 100 ms 1s SINGLE PULSE TJ = MAX RATED 10 s RθJA = 125 oC/W DC TA = 25 oC 0.1 1 10 100200 100 10 SINGLE PULSE RθJA = 125 oC/W 1 TA = 25 oC 0.5 -4 -3 -2 10 10 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area FDMS7672AS Rev.C VGS = 10 V Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS7672AS N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 0.01 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.001 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.0001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve FDMS7672AS Rev.C 5 www.fairchildsemi.com FDMS7672AS N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted SyncFET Schottky body diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MoSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverses recovery characteristic of the FDMS7672AS. -2 IDSS, REVERSE LEAKAGE CURRENT (A) 20 CURRENT (A) 15 di/dt = 300 A/µs 10 5 0 -5 0 30 60 90 120 150 TIME (ns) TJ = 125 oC TJ = 100 oC -3 10 -4 10 TJ = 25 oC -5 10 -6 10 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) Figure 14. FDMS7672AS SyncFET body diode reverse recovery characteristic FDMS7672AS Rev.C 10 Figure 15. SyncFET body diode reverses leakage versus drain-source voltage 6 www.fairchildsemi.com FDMS7672AS N-Channel PowerTrench® SyncFETTM Typical Characteristics (continued) FDMS7672AS N-Channel PowerTrench® SyncFETTM Dimensional Outline and Pad Layout FDMS7672AS Rev.C 7 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41 FDMS7672AS Rev.C 8 www.fairchildsemi.com FDMS7672AS N-Channel PowerTrench® SyncFETTM TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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