UTC-IC 2SB772SG-X-AB3-R

UNISONIC TECHNOLOGIES CO., LTD
2SB772S
PNP SILICON TRANSISTOR
MEDIUM POWER LOW
VOLTAGE TRANSISTOR
„
DESCRIPTION
The UTC 2SB772S is a medium power low voltage transistor,
designed for audio power amplifier, DC-DC converter and voltage
regulator.
„
FEATURES
* High current output up to 3A
* Low saturation voltage
* Complement to 2SD882S
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2SB772SL-x-AA3-R
2SB772SG-x-AA3-R
2SB772SL-x-AB3-R
2SB772SG-x-AB3-R
2SB772SL-x-T92-B
2SB772SG-x-T92-B
2SB772SL-x-T92-K
2SB772SG-x-T92-K
2SB772SL-x-T92-R
2SB772SG-x-T92-R
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
Package
SOT-223
SOT-89
TO-92
TO-92
TO-92
Pin Assignment
1
2
3
B
C
E
B
C
E
E
C
B
E
C
B
E
C
B
Packing
Tape Reel
Tape Reel
Tape Box
Bulk
Tape Reel
1 of 3
QW-R208-002.F
2SB772S
„
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Collector Current
DC Collector Current
Base Current
RATINGS
UNIT
-40
V
-30
V
-5
V
-7
A
-3
A
-0.6
A
SOT-89
0.5
W
Power Dissipation
SOT-223
PD
1
W
TO-92
0.5
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
SYMBOL
VCBO
VCEO
VEBO
ICP
IC
IB
ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
hFE1
DC Current Gain(Note 1)
hFE2
Collector-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter Saturation Voltage
VBE(SAT)
Current Gain Bandwidth Product
fT
Output Capacitance
COB
Note 1: Pulse test: PW<300μs, Duty Cycle<2%
„
TEST CONDITIONS
IC=-100μA, IE=0
IC=-1mA, IB=0
IE=-100μA, IC=0
VCB=-30V, IE=0
VCE=-30V, IB=0
VEB=-3V, IC=0
VCE=-2V, IC=-20mA
VCE=-2V, IC=-1A
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
VCE=-5V, IC=-0.1A
VCB=-10V, IE=0, f=1MHz
MIN
-40
-30
-5
TYP
MAX
-1000
-1000
-1000
30
100
200
150
-0.3
-1.0
80
45
400
-0.5
-2.0
UNIT
V
V
V
nA
nA
nA
V
V
MHz
pF
CLASSIFICATION OF hFE2
RANK
RANGE
Q
100 ~ 200
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
P
160 ~ 320
E
200 ~ 400
2 of 3
QW-R208-002.F
2SB772S
■
PNP SILICON TRANSISTOR
TYPICAL CHARACTERICS
Collector-Emitter Saturation Voltage
vs. Collector Current
DC Current Gain vs. Collector Current
800
-103
VCE=-2V
IC/IB=10
150°C
600
150°C
-102
400
25°C
-101
200
25°C
0
-10-1
-1
-100
-103
-101
-102
Collector Current, Ic (mA)
-104
-10-1
Base-Emitter Saturation Voltage vs.
-1.2
Collector Current
-104
Collector Current vs.
Collector-Emitter Voltage
2.0
IC/IB=10
-100
-101
-103
-102
Collector Current, Ic (mA)
1.6
25°C
-0.8
1.2
0.8
-0.4
150°C
0
-10-1
-100
-101
-102
0.4
-103
-104
Collector Current, Ic (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
0
0
1
2
3
4
5
Collector-Emitter Voltage, VCE (V)
3 of 3
QW-R208-002.F