VISHAY BAS16WS-V

BAS16WS-V
Vishay Semiconductors
Small Signal Fast Switching Diode
Features
• Silicon epitaxial planar diode
• Fast switching diode
• Also available in case SOT-23 with
designation BAS16
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC
and in accordance to WEEE 2002/96/EC
20145
Mechanical Data
Case: SOD-323
Weight: approx. 4.3 mg
Packaging codes/options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
BAS16WS-V
Ordering code
Marking
Remarks
BAS16WS-V-GS18 or BAS16WS-V-GS08
A6
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
VR
75
V
VRM
100
V
IF
250
mA
t = 1 µs
IFSM
2
A
t = 1 ms
IFSM
1
A
t=1s
IFSM
0.5
A
Ptot
200
mW
Symbol
Value
Unit
RthJA
650
K/W
Reverse voltage
Peak reverse voltage
Forward current (continuous)
Non-repetitive peak forward
current
Power dissipation
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to ambient air
Maximum junction temperature
Storage temperature
Document Number 85752
Rev. 1.7, 12-Aug-10
Test condition
Tj
150
°C
Tstg
- 65 to + 150
°C
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
BAS16WS-V
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Max.
Unit
IF = 1 mA
VF
715
mV
IF = 10 mA
VF
855
mV
Forward voltage
Typ.
IF = 50 mA
VF
1000
mV
IF = 150 mA
VF
1250
mV
VR = 25 V, TJ = 150 °C
IR
30
µA
VR = 75 V
IR
1
µA
VR = 75 V, TJ = 150 °C
IR
50
µA
VR = 0; f = 1 MHz
CD
2
pF
IF = 10 mA to IR = 10 mA,
IR = 1 mA, RL = 100 Ω
trr
6
ns
Leakage current
Diode capacitance
Reverse recovery time
Min.
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
103
500
Tj = 100 °C
102
400
Tj = 25 °C
Ptot (mW)
IF (mA)
10
1
300
200
100
10- 1
10- 2
0
0
1
2
100
VF (V)
18105
104
Tj = 25 °C
1.1
f = 1 kHz
2
10
Figure 3. Admissible Power Dissipation vs. Ambient Temperature
Tj = 25 °C
5
200
Tamb (°C)
Figure 1. Forward Characteristics
f = 1 MHz
3
1.0
CD (VR)
2
102
5
CD (0 V)
5
Rf (Ω)
0
18185
2
0.9
0.8
10
5
0.7
2
10-2
17438
10-1
1
10
102
IF (mA)
Figure 2. Dynamic Forward Resistance vs. Forward Current
www.vishay.com
2
0
17440
2
4
6
8
10
VR (V)
Figure 4. Relative Capacitance vs. Reverse Voltage
For technical questions within your region, please contact one of the following: Document Number 85752
[email protected], [email protected], [email protected]
Rev. 1.7, 12-Aug-10
BAS16WS-V
Vishay Semiconductors
104
5
2
103
IR (nA)
5
2
102
5
2
10
5
VR = 20 V
2
1
0
100
17441
200
Tj (°C)
Figure 5. Leakage Current vs. Junction Temperature
0.1 (0.004) max.
0° to 8
°
0.15 (0.006)
0.10 (0.004)
0.2 (0.008)
0.8 (0.031)
1.15 (0.045)
Package Dimensions in millimeters (inches): SOD-323
0.40 (0.016)
0.25 (0.010)
1.95 (0.077)
1.60 (0.063)
2.50 (0.098)
1.1 (0.043)
2.85 (0.112)
1.5 (0.059)
0.20 (0.008)
0.40 (0.016)
Cathode bar
Foot print recommendation:
Document no.:S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Rev. 5 - Date: 23.Sept.2009
17443
Document Number 85752
Rev. 1.7, 12-Aug-10
1.6 (0.063)
0.6 (0.024)
0.6 (0.024)
0.6 (0.024)
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
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Revision: 12-Mar-12
1
Document Number: 91000