BAS285 Vishay Semiconductors Small Signal Schottky Diode Features • Integrated protection ring against static discharge • Very low forward voltage • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 9612009 Applications • Applications where a very low forward voltage is required Mechanical Data Case: QuadroMELF SOD-80 Weight: approx. 34 mg Cathode band color: black Packaging codes/options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box Parts Table Part Type differentiation Ordering code Remarks VR = 30 V BAS285-GS18 or BAS285-GS08 Tape and Reel BAS285 Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value VR 30 V tp = 10 ms IFSM 5 A tp ≤ 1 s IFRM 300 mA IF 200 mA IFAV 200 mA Test condition Symbol Value Unit on PC board 50 mm x 50 mm x 1.6 mm RthJA 320 K/W Tj 125 °C Tstg - 65 to + 150 °C Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current Unit Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Junction to ambient air Junction temperature Storage temperature range Document Number 85501 Rev. 1.8, 23-Jul-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 BAS285 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Max Unit IF = 0.1 mA VF 240 mV IF = 1 mA VF 320 mV IF = 10 mA VF 400 mV IF = 30 mA VF 500 mV Forward voltage Reverse current Diode capacitance Min Typ. IF = 100 mA VF 800 mV VR = 25 V, tp = 300 µs IR 2.3 µA VR = 1 V, f = 1 MHz CD 10 pF Typical Characteristics 200 1000 VR = 30 V 180 160 140 RthJA = 540 kW 120 PR - Limit at 100 % VR 100 80 PR - Limit at 80 % VR 60 40 Tj = 125 °C IF - Forward Current (mA) PR - Reverse Power Dissipation (mW) Tamb = 25 °C, unless otherwise specified 100 Tj = 25 °C 10 1 20 0 0.1 25 50 75 100 125 150 Tj - Junction Temperature (°C) 15822 0 Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature 1.0 1.5 Figure 3. Forward Current vs. Forward Voltage 1000 10 CD - Diode Capacitance (pF) IR - Reverse Current (µA) 0.5 VF - Forward Voltage (V) 15824 VR = VRRM 100 10 f = 1 MHz 9 8 7 6 5 4 3 2 1 0 1 25 15823 50 75 100 125 Tj - Junction Temperature (°C) Figure 2. Reverse Current vs. Junction Temperature www.vishay.com 2 0.1 150 15825 1 10 100 VR - Reverse Voltage (V) Figure 4. Diode Capacitance vs. Reverse Voltage For technical questions within your region, please contact one of the following: Document Number 85501 [email protected], [email protected], [email protected] Rev. 1.8, 23-Jul-10 BAS285 Vishay Semiconductors Package Dimensions in millimeters (inches): QuadroMELF SOD-80 12071 Document Number 85501 Rev. 1.8, 23-Jul-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 QuadroMELF SOD80 Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches) 1.6 (0.063) 1.4 (0.055) 1. 7 (0 .0 gl as 67) s Cathode identification > R3 (R0.118) glass 0.47 (0.019) max. 3.7 (0.146) 3.3 (0.130) The gap between plug and glass can be either on cathode or anode side Foot print recommendation: 2.5 (0.098) max. 2 (0.079) min. 1.25 (0.049) min. 5 (0.197) ref. 96 12071 Document Number: 84025 Rev. 1.2, 12-Jan-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1