JMNIC 2SA1644

JMnic
Product Specification
2SA1644
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220 package
・Fast switching speed
・Low collector saturation voltage
APPLICATIONS
・For use in switching power supplies,DC-DC
converters,motor drivers,solenoid drivers,
and other low-voltage power supply devices,
as well as for high current switching
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-150
V
VCEO
Collector-emitter voltage
Open base
-100
V
VEBO
Emitter-base voltage
Open collector
-7
V
-5
A
-10
A
-3
A
IC
Collector current
ICM
Collector current-peak
IB
Base current
PT
Total power dissipation
PW≤300μs, duty cycle≤10%
Ta=25℃
1.5
TC=25℃
35
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
2SA1644
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEsat-1
Collector-emitter saturation voltage
VCEsat -2
‹
CONDITIONS
MAX
UNIT
IC=-3A; IB=-0.15A
-0.3
V
Collector-emitter saturation voltage
IC=-4A; IB=-0.2A
-0.5
V
VBE sat -1
Base-emitter saturation voltage
IC=-3A; IB=-0.15A
-1.2
V
VBE sat -2
Base-emitter saturation voltage
IC=-4A; IB=-0.2A
-1.5
V
ICBO
Collector cut-off current
VCB=-100V; IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-10
μA
hFE-1
DC current gain
IC=-0.2A ; VCE=-2V
100
hFE-2
DC current gain
IC=-1A ; VCE=-2V
100
hFE-3
DC current gain
IC=-3A ; VCE=-2V
60
hFE-2 Classifications
M
L
K
100-200
150-300
200-400
2
MIN
TYP.
400
JMnic
Product Specification
2SA1644
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3