JMnic Product Specification Silicon PNP Power Transistors 2SB707 2SB708 ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD568/569 APPLICATIONS ・For low frequency power amplifier low speed switching industrial use PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage CONDITIONS Open emitter 2SB707 Emitter-base voltage UNIT -80 V -60 Open base 2SB708 VEBO VALUE V -80 Open collector -7 V IC Collector current -7 A ICM Collector current-peak -15 A IB Base current -3.5 A PC Collector power dissipation Ta=25℃ 1.5 TC=25℃ 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SB707 2SB708 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SB707 V(BR)CEO Collector-emitter breakdown voltage MIN TYP. MAX UNIT -60 IC=-10mA; IB=0 2SB708 V -80 VCEsat Collector-emitter saturation voltage IC=-5A;IB=-0.5 A -0.5 V VBEsat Base-emitter saturation voltage IC=-5A;IB=-0.5 A -1.5 V ICBO Collector cut-off current VCB=-60V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE-1 DC current gain IC=-3A ; VCE=-1V 40 hFE-2 DC current gain IC=-5A ; VCE=-1V 20 hFE-2 classifications R O Y 40-80 60-120 100-200 2 200 JMnic Product Specification 2SB707 2SB708 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3