SAVANTIC 2SC2908

SavantIC Semiconductor
Product Specification
2SC2908
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package
·Low collector saturation voltage
APPLICATIONS
·For use in power amplifier and
switching circuits applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
200
V
VCEO
Collector-emitter voltage
Open base
100
V
VEBO
Emitter-base voltage
Open collector
12
V
IC
Collector current
5.0
A
ICM
Collector current-peak
10
A
IB
Base current
2.5
A
TC=25
50
W
PC
Collector power dissipation
Derate above 25
0.4
W/
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction case
MAX
2.5
UNIT
/W
SavantIC Semiconductor
Product Specification
2SC2908
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=3.0A ;IB1=0.3A;L=1.0mH
VCEsat
Collector-emitter saturation voltage
IC=3A ;IB=300mA
1.0
V
VBEsat
Base-emitter saturation voltage
IC=3A ;IB=300mA
1.5
V
ICBO
Collector cut-off current
VCB=100V; IE=0
10
µA
ICEX
Collector cut-off current
VCE=100V;VBE=-1.5V
10
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
µA
hFE-1
DC current gain
IC=0.3A ; VCE=5V
60
hFE-2
DC current gain
IC=3A ; VCE=5V
40
100
UNIT
V
320
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=3A; VCC=30V
IB1=0.3A ,IB2=-0.3A
RL=10@
hFE-1 Classifications
M
L
K
60-120
100-200
160-320
2
0.5
µs
2.0
µs
1.0
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
2SC2908
SavantIC Semiconductor
Product Specification
2SC2908
Silicon NPN Power Transistors
4