SavantIC Semiconductor Product Specification 2SB1194 Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·High DC current gain ·High speed switching ·DARLINGTON ·Complement to type 2SD1633 APPLICATIONS ·For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector -emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -5 A ICM Collector current-peak -8 A IB Base current -0.5 A PC Collector power dissipation Ta=25 2 TC=25 30 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SB1194 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX -100 UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=-0.2A; RBE=> VCEsat Collector-emitter saturation voltage IC=-3A ;IB=-3mA -1.5 V VBEsat Base-emitter saturation voltage IC=-3A ;IB=-3mA -2.0 V ICBO Collector cut-off current VCB=-100V; IE=0 -100 µA ICEO Collector cut-off current VCE=-100V; IB=0 -100 µA IEBO Emitter cut-off current VEB=-7V; IC=0 -5 mA hFE DC current gain IC=-3A ; VCE=-3V 1500 V 10000 Switching times ton Turn-on time tstg Storage time tf IC=-3A ;IB1=-IB2=-3mA VCC=-50V Fall time hFE Classifications Q P 1500-6000 4000-10000 2 3.0 µs 5.0 µs 3.0 µs SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3 2SB1194