ISC 2SC3680

Inchange Semiconductor
Product Specification
2SC3680
Silicon NPN Power Transistors
ESCRIPTION
・With TO-3PN package
・High voltage switching transistor
APPLICATIONS
・Switching regulator and general purpose
applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
900
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
7
A
ICM
Collector current-peak
14
A
IB
Base current
3.5
A
PC
Collector power dissipation
120
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC3680
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=3A ,IB=0.6A
0.5
V
VBEsat
Base-emitter saturation voltage
IC=3A ;IB=0.6A
1.2
V
ICBO
Collector cut-off current
VCB=800V; IE=0
100
μA
IEBO
Emitter cut-off current
VEB=7V; IC=0
100
μA
hFE
DC current gain
IC=3A ; VCE=4V
Cob
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IC=2A ; VCE=12V
800
UNIT
V
10
30
105
pF
6
MHz
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=3A;IB1=0.45A;
IB2=-1.5A;RL=83Ω
VCC=250V
Fall time
2
1.0
μs
5.0
μs
1.0
μs
Inchange Semiconductor
Product Specification
2SC3680
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
Inchange Semiconductor
Product Specification
2SC3680
Silicon NPN Power Transistors
4