ROHM 2SK3019

2SK3019
Transistor
Small switching (30V, 0.1A)
2SK3019
zExternal dimensions (Unit : mm)
zApplications
Interfacing, switching (30V, 100mA)
1.6±0.2
0.7±0.1
1.0±0.1
(1)
0.1±0.55
(2)
(2)
(3)
0.8±0.1
(1)
0.5
1.6±0.1
0.5
0.3 +0.1
−0.05
0~0.1
0.15±0.05
(1) Source
(2) Gate
(3) Drain
ROHM : EMT3
E I A J : SC-75A
JEDEC : SOT-416
zStructure
Silicon N-channel
MOSFET
Abbreviated symbol : KN
zAbsolute maximum ratings (Ta=25°C)
zEquivalent circuit
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
±20
V
ID
±100
mA
IDP∗1
±400
mA
Total power dissipation (Tc=25°C)
PD∗2
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
Drain current
Continuous
Pulsed
0.1Min
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive (2.5V) makes this device ideal for
portable equipment.
4) Easily designed drive circuits.
5) Easy to parallel.
Drain
Gate
∗ Gate
Protection
Diode
Source
∗1 Pw≤10µs, Duty cycle≤50%
∗2 With each pin mounted on the recommended lands.
∗A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in use.
Use a protection circuit when the fixed voltages
are exceeded.
Rev.A
1/4
2SK3019
Transistor
zElectrical characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
IGSS
−
−
±1
µA
VGS=±20V, VDS=0V
Drain-source breakdown voltage
V(BR)DSS
30
−
−
V
ID=10µA, VGS=0V
Zero gate voltage drain current
IDSS
−
−
1.0
µA
VDS=30V, VGS=0V
Parameter
Gate-source leakage
Conditions
Gate threshold voltage
VGS(th)
0.8
−
1.5
V
VDS=3V, ID=100µA
Static drain-source on-state
resistance
RDS(on)
−
5
8
Ω
ID=10mA, VGS=4V
RDS(on)
−
7
13
Ω
ID=1mA, VGS=2.5V
Forward transfer admittance
|Yfs|
20
−
−
ms
ID=10mA, VDS=3V
Input capacitance
Ciss
−
13
−
pF
VDS=5V
Output capacitance
Coss
−
9
−
pF
VGS=0V
Reverse transfer capacitance
Crss
−
4
−
pF
f=1MHz
Turn-on delay time
td(on)
−
15
−
ns
ID=10mA, VDD
tr
−
35
−
ns
VGS=5V
td(off)
−
80
−
ns
RL=500Ω
tr
−
80
−
ns
RG=10Ω
Rise time
Turn-off delay time
Fall time
5V
zPackaging specifications
Package
Type
Taping
TL
Code
Basic ordering unit
(pieces)
3000
2SK3019
0.15
200m
3V
100m
Ta=25°C
Pulsed
3.5V
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
4V
0.1
2.5V
0.05
2V
1
2
3
VDS=3V
Pulsed
50m
20m
10m
5m
2m
Ta=125°C
75°C
25°C
−25°C
1m
0.5m
0.2m
VGS=1.5V
0
0
GATE THRESHOLD VOLTAGE : VGS(th) (V)
zElectrical characteristic curves
4
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.1 Typical output characteristics
5
0.1m
0
1
2
3
4
GATE-SOURCE VOLTAGE : VGS (V)
Fig.2 Typical transfer characteristics
2
VDS=3V
ID=0.1mA
Pulsed
1.5
1
0.5
0
−50 −25
0
25
50
75
100
125 150
CHANNEL TEMPERATURE : Tch (°C)
Fig.3 Gate threshold voltage vs.
channel temperature
Rev.A
2/4
2SK3019
Transistor
50
Ta=125°C
75°C
25°C
−25°C
10
5
2
1
0.5
0.001 0.002
0.005
0.01
0.02
0.05
0.1
0.2
20
10
5
2
1
0.5
0.001 0.002
0.5
DRAIN CURRENT : ID (A)
Fig.4 Static drain-source on-state
resistance vs. drain current (Ι)
0.02
0.05
0.1
0.5
6
ID=50mA
4
3
2
VDS=3V
Pulsed
Ta=−25°C
25°C
75°C
125°C
0.1
0.05
0.02
0.01
0.005
1
0.002
0
−50 −25
0.001
0.0001 0.0002
0
25
50
75
100 125
150
0.0005 0.001 0.002
0.05 0.1 0.2
0.005 0.01 0.02
50
CAPACITANCE : C (pF)
20m
0V
5m
2m
1m
0.5m
10
Coss
Crss
2
15
20
VGS=0V
Pulsed
100m
50m
20m
Ta=125°C
75°C
25°C
−25°C
10m
5m
2m
1m
0.5m
0.2m
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Ciss
5
10
0.1m
0.5
Fig.9 Reverse drain current vs.
source-drain voltage (Ι)
1000
Ta=25°C
f=1MHZ
VGS=0V
20
50m
VGS=4V
5
200m
Fig.8 Forward transfer
admittance vs. drain current
Ta=25°C
Pulsed
100m
ID=0.05A
0
0
DRAIN CURRENT : ID (A)
Fig.7 Static drain-source on-state
resistance vs. channel
temperature
200m
ID=0.1A
Fig.6 Static drain-source
on-state resistance vs.
gate-source voltage
1
Ta=25°C
VDD=5V
VGS=5V
RG=10Ω
Pulsed
tf
500
SWITHING TIME : t (ns)
ID=100mA
5
5
GATE-SOURCE VOLTAGE : VGS (V)
0.2
7
10m
0.2
0.5
VGS=4V
Pulsed
CHANNEL TEMPERATURE : Tch (°C)
REVERSE DRAIN CURRENT : IDR (A)
0.01
10
Fig.5 Static drain-source on-state
resistance vs. drain current (ΙΙ)
FORWARD TRANSFER
ADMITTANCE : |Yfs| (S)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
9
8
0.005
Ta=25°C
Pulsed
DRAIN CURRENT : ID (A)
REVERSE DRAIN CURRENT : IDR (A)
20
15
VGS=2.5V
Pulsed
Ta=125°C
75°C
25°C
−25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
VGS=4V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
50
td(off)
200
100
50
tr
20
td(on)
10
5
0.2m
0.1m
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.10 Reverse drain current vs.
source-drain voltage (ΙΙ)
0.5
0.1
0.2
0.5
1
2
5
10
20
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.11 Typical capacitance vs.
drain-source voltage
50
2
0.1 0.2
0.5
1
2
5
10
20
50
100
DRAIN CURRENT : ID (mA)
Fig.12 Switching characteristics
(See Figures 13 and 14 for
the measurement circuit
and resultant waveforms)
Rev.A
3/4
2SK3019
Transistor
zSwitching characteristics measurement circuit
Pulse width
VGS
RG
ID
D.U.T.
VDS
VGS
90%
50%
10%
RL
50%
10%
VDS
10%
VDD
90%
90%
td (on)
ton
Fig.13 Switching time measurement circuit
tr
td (off)
tf
toff
Fig.14 Switching time waveforms
Rev.A
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1