MA-COM TGF2021-08

Advance Product Information
September 19, 2005
DC - 12 GHz Discrete power pHEMT
TGF2021-08
Key Features and Performance
•
•
•
•
•
•
•
Frequency Range: DC - 12 GHz
> 39 dBm Nominal Psat
59% Maximum PAE
11 dB Nominal Power Gain
Suitable for high reliability applications
8mm x 0.35 m Power pHEMT
Nominal Bias Vd = 8-12V, Idq = 600-1000mA
(Under RF Drive, Id rises from 600mA to 1920mA)
Chip Dimensions: 0.57 x 2.42 x 0.10 mm
(0.022 x 0.095 x 0.004 in)
•
Product Description
Primary Applications
The TriQuint TGF2021-08 is a discrete 8mm
pHEMT which operates from DC-12 GHz.
The TGF2021-08 is designed using
TriQuint’s proven standard 0.35um power
pHEMT production process.
•
•
•
•
•
The TGF2021-08 is also ideally suited for
Point-to-point Radio, High-reliability space,
and Military applications.
35
30
Maximum Gain (dB)
The TGF2021-08 typically provides
> 39 dBm of saturated output power with
power gain of 11 dB. The maximum power
added efficiency is 59% which makes the
TGF2021-08 appropriate for high efficiency
applications.
Point-to-point Radio
High-reliability space
Military
Base Stations
Broadband Wireless Applications
25
MSG
20
MAG
15
10
5
0
The TGF2021-08 has a protective surface
passivation layer providing environmental
robustness.
0
2
4
6
8
10
12
14
16
Frequency (GHz)
Lead-free and RoHS compliant
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
1
Advance Product Information
September 19, 2005
TGF2021-08
TABLE I
MAXIMUM RATINGS
Symbol
V+
Parameter 1/
Positive Supply Voltage
-
Value
Notes
12.5 V
2/
V
Negative Supply Voltage Range
I+
Positive Supply Current
3.8 A
| IG |
Gate Supply Current
56 mA
PIN
Input Continuous Wave Power
34 dBm
2/
PD
Power Dissipation
See note 3
2/ 3/
TCH
Operating Channel Temperature
150 °C
4/
TM
Mounting Temperature (30 Seconds)
320 °C
TSTG
-5V to 0V
2/
-65 to 150 °C
Storage Temperature
1/
These ratings represent the maximum operable values for this device.
2/
Combinations of supply voltage, supply current, input power, and output power shall
not exceed PD.
3/
4/
For a median life time of 1E+6 hrs, Power dissipation is limited to:
PD(max) = (150 °C – TBASE °C) / 10.8 (°C/W)
Junction operating temperature will directly affect the device median time to failure
(TM). For maximum life, it is recommended that junction temperatures be maintained
at the lowest possible levels.
TABLE II
DC PROBE CHARACTERISTICS
(TA = 25 qC, Nominal)
Symbol
Parameter
Minimum
Typical
Maximum
Unit
Idss
Saturated Drain Current
-
2400
-
mA
Gm
Transconductance
-
3000
-
mS
VP
Pinch-off Voltage
-1.5
-1
-0.5
V
VBGS
Breakdown Voltage
Gate-Source
Breakdown Voltage
Gate-Drain
-30
-
-14
V
-30
-
-14
V
VBGD
Note: For TriQuint’s 0.35um power pHEMT devices, RF breakdown >> DC breakdown
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
2
Advance Product Information
September 19, 2005
TABLE III
RF CHARACTERIZATION TABLE 1/
TGF2021-08
(T A = 25 °C, Nominal)
PARAMETER
Vd = 10V
Idq = 600mA
Vd = 12V
Idq = 600mA
UNITS
Psat
Saturated Output Power
39.8
40.5
dBm
PAE
Power Added Efficiency
50
48
%
Gain
Power Gain
11
11
dB
Rp 2/
Parallel Resistance
3.33
3.99
Ω
Cp 2/
Parallel Capacitance
3.705
3.811
pF
Γ L 3/, 4/
Efficiency Tuned:
Load Reflection coefficient
0.920 ∠ 176.3
0.920 ∠ 175.4
-
Psat
Saturated Output Power
39
39.7
dBm
PAE
Power Added Efficiency
59
55
%
Gain
Power Gain
11.5
11
dB
Rp 2/
Parallel Resistance
6.13
6.95
Ω
Cp 2/
Parallel Capacitance
4.308
4.042
pF
Γ L 3/, 4/
Load Reflection coefficient
0.937 ∠ 173.8
0.935 ∠ 173.2
-
SYMBOL
Power Tuned:
1/ Values in this table are scaled from measurements taken from a 1mm unit pHEMT cell at 10 GHz
2/ Large signal equivalent pHEMT output network
3/ Optimum load impedance for maximum power or maximum PAE at 10 GHz
4 The reflection coefficients for this device have been calculated from the scaled large signal Rp & Cp.
The series resistance and inductance (Rd and Ld) shown in the Figure on page 4 is excluded
TABLE IV
THERMAL INFORMATION
Test Conditions
Parameter
θJC Thermal Resistance
Vd = 12 V
(channel to backside of carrier) Idq = 600 mA
Pdiss = 7.2 W
TCH
(oC)
TJC
(qC/W)
TM
(HRS)
148
10.8
1.2 E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70°C baseplate temperature.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
3
Advance Product Information
September 19, 2005
TGF2021-08
Linear Model for 1mm Unit pHEMT cell
Rdg
Lg
Rg
Cdg
Rd
Ld
Gate
Drain
Cgs
+
vi
Rgs
Ri
Rds
Cds
gm vi
-
8QLWS+(07FHOO
5HIHUHQFH3ODQH
Rp, Cp
Ls
Rs
Source
Gate
Source
Drain
UPC
Source
Source
UPC = 1mm Unit pHEMT Cell
MODEL
PARAMETER
Vd = 8V
Idq = 75mA
Vd = 8V
Idq = 100mA
Vd = 8V
Idq = 125mA
Vd = 10V
Idq = 75mA
Vd = 10V
Idq = 100mA
Vd = 12V
Idq = 75mA
UNITS
Rg
0.45
0.45
0.45
0.45
0.450
0.45
Ω
Rs
0.14
0.14
0.14
0.17
0.160
0.19
Ω
Rd
0.41
0.43
0.46
0.41
0.450
0.410
Ω
gm
0.310
0.318
0.314
0.296
0.303
0.286
S
Cgs
2.39
2.58
2.70
2.61
2.74
2.72
pF
1.22
1.19
1.20
1.24
1.23
1.27
Ω
Cds
0.20
0.201
0.201
0.198
0.199
0.196
pF
Rds
149.1
152.3
158.8
171.8
173.7
187.9
Ω
Cgd
0.115
0.107
0.101
0.101
0.098
0.096
pF
Tau
6.29
6.63
6.99
7.19
7.410
7.79
pS
0.009
0.009
0.009
0.009
0.010
0.010
nH
Lg
0.089
0.089
0.089
0.089
0.089
0.089
Ld
0.120
0.120
0.120
0.120
0.120
0.120
Rgs
33000
33000
35100
28900
35700
24400
Ω
Rgd
349000
425000
405000
305000
366000
238000
Ω
Ri
Ls
nH
nH
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw[email protected] Web: www.triquint.com
4
Advance Product Information
September 19, 2005
TGF2021-08
Linear Model for 8mm pHEMT
L - via = 0.0135 nH (9x)
8
7
6
UPC
UPC
UPC
9
10
11
Drain Pads (8x)
Gate Pads (8x)
5
4
UPC
UPC
12
13
3
UPC
14
2
UPC
15
1
UPC
16
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
5
Advance Product Information
September 19, 2005
TGF2021-08
Unmatched S-parameter for 8mm pHEMT
Bias Conditions: Vd=12V, Idq=600mA
Frequency s11
s11 ang
s21
s21 ang
s12
s12 ang
s22
s22 ang
(GHz)
dB
deg
dB
deg
dB
deg
dB
deg
0.5
-0.219
-165.41
19.074
93.88
-39.703
6.63
-2.938
-175.24
1
-0.218
-172.72
13.085
86.79
-39.685
2.29
-2.874
-176.34
1.5
-0.216
-175.20
9.538
82.14
-39.733
0.41
-2.829
-176.18
2
-0.215
-176.46
6.995
78.13
-39.810
-0.81
-2.776
-175.74
2.5
-0.213
-177.22
4.997
74.41
-39.911
-1.72
-2.713
-175.22
3
-0.210
-177.75
3.340
70.85
-40.033
-2.43
-2.641
-174.70
3.5
-0.207
-178.14
1.917
67.41
-40.175
-2.98
-2.561
-174.21
4
-0.204
-178.44
0.662
64.08
-40.335
-3.39
-2.475
-173.77
4.5
-0.201
-178.69
-0.466
60.84
-40.512
-3.65
-2.384
-173.39
5
-0.197
-178.90
-1.494
57.69
-40.703
-3.77
-2.290
-173.06
5.5
-0.194
-179.08
-2.443
54.62
-40.907
-3.73
-2.196
-172.80
6
-0.190
-179.25
-3.326
51.64
-41.121
-3.54
-2.101
-172.60
6.5
-0.187
-179.39
-4.154
48.74
-41.344
-3.19
-2.007
-172.45
7
-0.183
-179.53
-4.935
45.92
-41.574
-2.67
-1.914
-172.36
7.5
-0.179
-179.66
-5.676
43.18
-41.807
-1.99
-1.824
-172.31
8
-0.175
-179.78
-6.382
40.52
-42.041
-1.13
-1.737
-172.31
8.5
-0.172
-179.89
-7.055
37.94
-42.275
-0.11
-1.653
-172.34
9
-0.168
180.00
-7.701
35.44
-42.504
1.08
-1.573
-172.40
9.5
-0.165
179.89
-8.321
33.01
-42.727
2.43
-1.497
-172.50
10
-0.162
179.79
-8.917
30.65
-42.943
3.95
-1.424
-172.62
10.5
-0.159
179.68
-9.492
28.36
-43.148
5.62
-1.354
-172.76
11
-0.155
179.58
-10.047
26.14
-43.342
7.45
-1.289
-172.92
11.5
-0.153
179.49
-10.583
23.98
-43.522
9.43
-1.226
-173.09
12
-0.150
179.39
-11.103
21.88
-43.683
11.58
-1.168
-173.28
12.5
-0.147
179.30
-11.606
19.85
-43.822
13.87
-1.112
-173.47
13
-0.144
179.20
-12.094
17.87
-43.933
16.28
-1.060
-173.68
13.5
-0.142
179.11
-12.569
15.94
-44.015
18.79
-1.010
-173.90
14
-0.139
179.02
-13.029
14.07
-44.066
21.36
-0.964
-174.12
14.5
-0.137
178.93
-13.477
12.25
-44.085
23.96
-0.920
-174.34
15
-0.135
178.84
-13.913
10.48
-44.074
26.55
-0.878
-174.57
15.5
-0.133
178.75
-14.338
8.75
-44.033
29.12
-0.839
-174.80
16
-0.131
178.66
-14.752
7.06
-43.965
31.64
-0.803
-175.03
16.5
-0.129
178.58
-15.156
5.42
-43.871
34.10
-0.768
-175.26
17
-0.128
178.49
-15.551
3.81
-43.755
36.47
-0.735
-175.49
17.5
-0.126
178.40
-15.936
2.25
-43.619
38.75
-0.704
-175.73
18
-0.124
178.32
-16.314
0.72
-43.465
40.93
-0.674
-175.96
18.5
-0.123
178.23
-16.683
-0.78
-43.296
43.00
-0.647
-176.19
19
-0.122
178.15
-17.044
-2.24
-43.114
44.96
-0.620
-176.42
19.5
-0.120
178.06
-17.398
-3.67
-42.922
46.81
-0.595
-176.65
20
-0.119
177.98
-17.746
-5.08
-42.721
48.56
-0.572
-176.88
20.5
-0.118
177.90
-18.087
-6.45
-42.512
50.19
-0.549
-177.10
21
-0.117
177.82
-18.422
-7.80
-42.299
51.72
-0.528
-177.33
21.5
-0.116
177.73
-18.751
-9.12
-42.082
53.15
-0.508
-177.55
22
-0.115
177.65
-19.076
-10.41
-41.862
54.48
-0.489
-177.77
22.5
-0.114
177.57
-19.395
-11.69
-41.640
55.71
-0.470
-177.99
23
-0.113
177.49
-19.709
-12.94
-41.418
56.86
-0.453
-178.20
23.5
-0.112
177.41
-20.020
-14.17
-41.196
57.91
-0.436
-178.42
24
-0.111
177.33
-20.326
-15.38
-40.975
58.88
-0.421
-178.63
24.5
-0.110
177.25
-20.628
-16.57
-40.755
59.77
-0.406
-178.84
25
-0.110
177.17
-20.927
-17.74
-40.539
60.58
-0.391
-179.05
25.5
-0.109
177.09
-21.222
-18.90
-40.327
61.31
-0.377
-179.25
26
-0.109
177.01
-21.515
-20.04
-40.121
61.98
-0.364
-179.46
Note: The s-parameters are calculated by connecting nodes 1-8 together, and nodes
9-16 together to form a 2-port network.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
6
Advance Product Information
September 19, 2005
TGF2021-08
Mechanical Drawing
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GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during
handing, assembly and test.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
7
Advance Product Information
September 19, 2005
TGF2021-08
Assembly Process Notes
Reflow process assembly notes:
•
•
•
•
•
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 °C for 30 sec
An alloy station or conveyor furnace with reducing atmosphere should be used.
Do not use flux
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
•
•
•
•
•
•
•
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
•
•
•
•
•
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Devices with small pad sizes should be bonded with 0.0007-inch wire.
Maximum stage temperature is 200 °C.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
8