VISHAY MBR3050PT

MBR3035PT thru MBR3060PT
Vishay General Semiconductor
Dual Common-Cathode Schottky Rectifier
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
3
2
• Solder dip 260 °C, 40 s
1
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TO-247AD (TO-3P)
PIN 1
PIN 2
PIN 3
CASE
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
PRIMARY CHARACTERISTICS
IF(AV)
30 A
VRRM
35 V to 60 V
IFSM
200 A
VF
0.60 V, 0.65 V
TJ max.
150 °C
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR3035PT MBR3045PT MBR3050PT MBR3060PT
UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
V
Maximum working peak reverse voltage
VRWM
35
45
50
60
V
35
45
50
60
Maximum DC blocking voltage
VDC
Maximum average forward rectified current (Fig. 1)
IF(AV)
30
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
200
A
Peak repetitive reverse surge current per diode (1)
IRRM
Voltage rate of change at (rated VR)
dV/dt
10 000
V/µs
TJ
- 65 to + 150
°C
TSTG
- 65 to + 175
°C
Operating junction temperature range
Storage temperature range
2.0
1.0
V
A
Note:
(1) 2.0 µs pulse width, f = 1.0 kHz
Document Number: 88676
Revision: 07-May-08
For technical questions within your region, please contact one of the following:
[email protected]m, [email protected], [email protected]
www.vishay.com
1
MBR3035PT thru MBR3060PT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 20 A
IF = 20 A
IF = 30 A
IF = 30 A
Maximum instantaneous
forward voltage per diode (1)
Maximum instantaneous
reverse current at rated DC
blocking voltage per diode (1)
SYMBOL MBR3035PT MBR3045PT MBR3050PT MBR3060PT
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
UNIT
VF
0.60
0.76
0.72
0.75
0.65
-
V
IR
1.0
60
5.0
100
mA
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR3035PT MBR3045PT MBR3050PT MBR3060PT
Thermal resistance from junction to case per diode
RθJC
1.4
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
TO-247AD
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
6.13
45
30/tube
Tube
MBR3045PT-E3/45
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise specified)
30
300
Peak Forward Surge Current (A)
Average Forward Current (A)
Resistive or Inductive Load
24
18
12
6
MBR3035PT - MBR3045PT
MBR3050PT & MBR3060PT
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
250
200
150
100
50
0
0
0
50
100
150
1
100
10
Case Temperature (°C)
Number of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
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2
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88676
Revision: 07-May-08
MBR3035PT thru MBR3060PT
Vishay General Semiconductor
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TJ = 150 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
10
1
TJ = 25 °C
0.1
1000
MBR3035PT - MBR3045PT
MBR3050PT & MBR3060PT
MBR3035PT - MBR3045PT
MBR3050PT & MBR3060PT
0.01
100
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1
0.1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
100
MBR3035PT - MBR3045PT
MBR3050PT & MBR3060PT
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
100
10
TJ = 125 °C
1
TJ = 75 °C
0.1
0.01
TJ = 25 °C
0.001
0
20
40
60
80
10
1
0.1
0.01
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-247AD (TO-3P)
0.645 (16.4)
0.625 (15.9)
0.245 (6.2)
0.225 (5.7)
0.323 (8.2)
0.313 (7.9)
0.203 (5.16)
0.193 (4.90)
30°
0.078 (1.98) REF.
10
0.170
(4.3)
0.840 (21.3)
0.142 (3.6)
0.138 (3.5)
0.820 (20.8)
1
2
10° TYP.
Both Sides
3
1° REF.
Both Sides
0.086 (2.18)
0.076 (1.93)
0.127 (3.22)
0.160 (4.1)
0.140 (3.5)
0.117 (2.97)
0.118 (3.0)
0.108 (2.7)
0.795 (20.2)
0.775 (19.6)
0.048 (1.22)
0.044 (1.12)
0.225 (5.7)
0.205 (5.2)
Document Number: 88676
Revision: 07-May-08
0.030 (0.76)
0.020 (0.51)
PIN 1
PIN 2
PIN 3
CASE
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
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Vishay
Disclaimer
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
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Document Number: 91000
Revision: 11-Mar-11
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