VISHAY VF30120C-M3-4W

New Product
VF30120C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
FEATURES
TMBS ®
• Trench MOS Schottky technology
ITO-220AB
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106
1
2
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
3
• Halogen-free according to IEC 61249-2-21 definition
VF30120C
PIN 1
TYPICAL APPLICATIONS
PIN 2
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PIN 3
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
120 V
IFSM
150 A
VF at IF = 15 A
0.68 V
TJ max.
150 °C
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
SYMBOL
VF30120C
UNIT
VRRM
120
V
per device
per diode
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
30
IF(AV)
A
15
IFSM
150
A
dV/dt
10 000
V/μs
Isolation voltage from termal to heatsink t = 1 min
VAC
1500
V
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150
°C
Voltage rating of change (rated VR)
Document Number: 89325
Revision: 10-Nov-10
For technical questions within your region, please contact one of the following:
[email protected], Dio[email protected], [email protected]
www.vishay.com
1
New Product
VF30120C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
IF = 5 A
IF = 7.5 A
TA = 25 °C
IF = 15 A
Instantaneous forward voltage per diode
VF (1)
IF = 5 A
MIN.
IF = 15 A
0.56
-
0.71
-
0.86
0.97
0.50
-
0.60
-
0.68
0.76
11
-
μA
8
-
mA
-
800
μA
17
50
mA
TA = 25 °C
VR = 90 V
TA = 125 °C
Reverse current per diode
IR (2)
TA = 25 °C
VR = 120 V
UNIT
V
TA = 125 °C
IF = 7.5 A
TYP.
TA = 125 °C
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance per diode
SYMBOL
VF30120C
UNIT
RθJC
4.5
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
ITO-220AB
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
1.75
4W
50/tube
Tube
VF30120C-M3/4W
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
18
Resistive or Inductive Load
D = 0.5
16
35
D = 0.8
D = 0.3
Average Power Loss (W)
Average Forward Rectified Current (A)
40
30
25
20
15
10
5
14
D = 0.2
12
10
D = 0.1
D = 1.0
8
T
6
4
D = tp/T
2
Mounted on Specific Heatsink
tp
0
0
0
25
50
75
100
125
150
175
0
2
4
6
8
10
12
14
16
18
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Diode
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 89325
Revision: 10-Nov-10
New Product
VF30120C
Vishay General Semiconductor
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 150 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
TA = 125 °C
10
TA = 100 °C
1
TA = 25 °C
1000
100
10
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1.6
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
10
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
100
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
0.1
TA = 25 °C
0.01
20
30
40
50
60
70
80
90
1
0.1
0.01
0.001
10
Junction to Case
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
ITO-220AB
0.190 (4.83)
0.170 (4.32)
0.404 (10.26)
0.384 (9.75)
0.110 (2.79)
0.100 (2.54)
0.076 (1.93) REF.
0.076 (1.93) REF.
45° REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.600 (15.24)
0.580 (14.73)
0.671 (17.04)
0.651 (16.54)
PIN
1
2
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.350 (8.89)
0.330 (8.38)
3
7° REF.
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
Document Number: 89325
Revision: 10-Nov-10
0.191 (4.85)
0.171 (4.35)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.110 (2.79)
0.100 (2.54)
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
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Document Number: 91000
Revision: 11-Mar-11
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