VISHAY BAS86-M

BAS86-M
Vishay Semiconductors
Small Signal Schottky Diode
Features
• For general purpose applications
• This diode features low turn-on voltage.
The devices are protected by a PN
junction guard ring against excessive
voltage, such as electrostatic discharges.
• Metal-on-silicon Schottky barrier device
which is protected by a PN junction guard
ring.
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
94 9371
Mechanical Data
Case: MiniMELF SOD-80
Weight: approx. 31 mg
Cathode band color: black
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/2.5K per 7" reel (8 mm tape), 12.5K/box
Applications
• Applications where a very low forward voltage is
required
Parts Table
Part
BAS86-M
Ordering code
Type marking
Remarks
BAS86-M-18 or BAS86-M-08
-
Tape and reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Symbol
Value
Continuous reverse voltage
Parameter
Test condition
VR
50
Forward continuous current
IF
Repetitive peak forward current
Power dissipation
1)
tp < 1 s, ν ≤ 0.5
1)
200
1)
Unit
V
mA
IFRM
5001)
mA
Ptot
1)
mW
Symbol
Value
Unit
RthJA
3001)
K/W
Tj
125
°C
Tamb
- 65 to + 125
°C
TS
- 65 to +150
°C
200
Valid provided that electrodes are kept at ambient temperature
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to
ambient air
Junction temperature
Ambient operating temperature
range
Storage temperature range
1)
Valid provided that electrodes are kept at ambient temperature
Document Number 83402
Rev. 1.0, 13-Jan-11
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
BAS86-M
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min.
IR = 10 µA (pulsed)
V(BR)
Max.
Unit
50
VR = 40 V
IR
5
µA
Pulse test tp < 300 µs,
IF = 0.1 mA, δ < 2 %
VF
200
300
mV
Pulse test tp < 300 µs,
IF = 1 mA, δ < 2 %
VF
275
380
mV
Pulse test tp < 300 µs,
IF = 10 mA, δ < 2 %
VF
365
450
mV
Pulse test tp < 300 µs,
IF = 30 mA, δ < 2 %
VF
460
600
mV
Pulse test tp < 300 µs,
IF = 100 mA, δ < 2 %
VF
700
900
mV
VR = 1 V, f = 1 MHz
CD
8
pF
IF = 10 mA, IR = 10 mA,
Irr = 1 mA,
trr
5
ns
Reverse breakdown voltage
Leakage current
Forward voltage
Diode capacitance
Reverse recovery time
Typ.
V
Typical Characteristics
500
1000
VR = 50 V
450
Tj = 125 °C
400
350
300
250
PR - Limit
at 100 % VR
200
150
100
PR - Limit
at 80 % VR
R thJA = 540 K/W
IF - Forward Current (A)
PR - Reverse Power Dissipation (mW)
Tamb = 25 °C, unless otherwise specified
100
Tj = 25 °C
10
1
50
0
25
0.1
50
75
100
125
Tj - Junction Temperature (°C)
15827
0
150
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
9
C D - Diode Capacitance (pF)
I R - Reverse Current (µA)
1000
100
10
75
100
125
150
Tj - Junction Temperature (°C)
2
15830
f = 1 MHz
8
7
6
5
4
3
2
1
0
50
Figure 2. Reverse Current vs. Junction Temperature
www.vishay.com
1.5
10
V R = V RRM
15828
1.0
Figure 3. Forward Current vs. Forward Voltage
10000
1
25
0.5
V F - Forward Voltage (V)
15829
0.1
1
10
100
V R - Reverse Voltage (V)
Figure 4. Diode Capacitance vs. Reverse Voltage
For technical questions within your region, please contact one of the following: Document Number 83402
[email protected], [email protected], [email protected]
Rev. 1.0, 13-Jan-11
BAS86-M
Vishay Semiconductors
Package Dimensions in millimeters (inches): MiniMELF SOD-80
1.6 (0.063)
1.4 (0.055)
Cathode indification
*
0.47 (0.019) max.
3.7 (0.146)
3.3 (0.130)
* The gap between plug and glass can
be either on cathode or anode side
Foot print recommendation:
1.25 (0.49) min.
2 (0.079) min.
2.5 (0.098) max.
5 (0.197) ref.
Document no.:6.560-5005.01-4
Rev. 8 - Date: 07.June.2006
96 12070
Document Number 83402
Rev. 1.0, 13-Jan-11
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
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Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1