BC857S Multi-Chip TRANSISTOR (PNP) SOT-363 FEATURES Power dissipation C1 B2 PCM : 300 mW(Tamb=25℃) E2 Collector current ICM : -200 mA Collector-base voltage V V(BR)CBO : -50 Operating and storage junction temperature range E1 B1 C2 TJ,Tstg: -55℃to +150℃ MARKING: 3C ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-10µA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO Ic=-10mA,IB=0 -45 V Emitter-base breakdown voltage V(BR)EBO IE=-10µA,IC=0 -5 V Collector cut-off current ICBO VCB=-30V,IE=0 DC current gain hFE VCE=-5V,IC=-2mA -15 125 nA 630 VCE(sat)(1) IC=-10mA,IB=-0.5mA -0.3 V VCE(sat)(2) IC=-100mA,IB=-5mA -0.65 V -0.75 V -0.82 V Collector-emitter saturation voltage VBE(1) VCE=-5V,IC=-2mA VBE(2) VCE=-5V,IC=-10mA -0.6 Base-emitter voltage Transition frequency fT Collector output capacitance Cob Noise figure NF VCE=-5V,IC=-10mA,f=100MHz 200 MHz VCB=-10V,IE=0,f=1MHz 3.5 pF 2.5 dB VCE=-5V,Ic=-0.2mA, f=1kHZ,Rs=2KΩ,BW=200Hz 1 JinYu semiconductor www.htsemi.com Date:2011/ 05