isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU104 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 150V(Min.) ·Low Collector Saturation Voltage: VCE(sat)= 2.5V(Max.)@ IC= 7A APPLICATIONS ·Designed for use in horizontal deflexion output stage of B/W TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 150 V VCEX Collector-Emitter Voltage VBE= -5V 400 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak Repetitive 15 A IB Base Current-Continuous 3 A PC Collector Power Dissipation @ TC= 25℃ 85 W TJ Junction Temperature 200 ℃ -65~200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case isc Website：www.iscsemi.cn MAX UNIT 2.0 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU104 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1A 2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 1A 2.5 V ICBO Collector Cutoff Current VCB= 250V; IE= 0 0.5 mA ICEX Collector Cutoff Current VCE= 400V; VBE= -5V 1.0 mA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 10 mA hFE DC Current Gain IC= 5A; VCE= 1.75V Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V fT isc Website：www.iscsemi.cn CONDITIONS MIN TYP. 150 UNIT V B B 2 MAX 10 50 10 MHz