ISC 3DD301D

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
3DD301D
DESCRIPTION
·Collector-Emitter Breakdown Voltage: V(BR)CEO= 150V(Min)
·Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max) @IC= 3A
APPLICATIONS
·Designed for B/W TV vertical output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
5
A
PC
Collector Power Dissipation
@ TC=25℃
30
W
TJ
Junction Temperature
150
℃
-55~150
℃
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance,Junction to Case
isc Website:www.iscsemi.cn
MAX
UNIT
2.5
℃/W
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
3DD301D
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 5mA; IB= 0
150
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
6
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 5mA; IE= 0
300
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 3A; IB= 0.3A
1.5
V
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
0.1
mA
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
0.1
mA
hFE
DC Current Gain
IC= 3A; VCE= 5V
Fall Time
IC= 3A; IB1= 0.2A; IB2= -0.3A
tf
isc Website:www.iscsemi.cn
CONDITIONS
B
MIN
B
2
30
TYP.
MAX
UNIT
120
1
μs