SDR1ASM & SMS thru SDR1MSM & SMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 1.0 AMPS 50 ─ 1000 VOLTS 50 – 70 nsec ULTRA FAST RECTIFIER Designer’s Data Sheet Part Number/Ordering Information 1/ SDR1 __ __ __ │ │ │ │ │ │ │ │ │ └ │ └ Screening 2/ │ __ = Not Screened │ TX = TX Level │ TXV = TXV │ S = S Level (for SM, use –S) │ └ Package Type SM = Surface Mount Round Tab SMS = Surface Mount Square Tab Voltage A = 50 V B = 100 V D = 200 V G = 400 V • • • • • • • • J = 600 V K = 800 V M = 1000 V • FEATURES: Ultra Fast Recovery: 50-70 ns Max @ 25ºC 4/ 80-120 ns Max @ 100ºC 4/ Single Chip Construction PIV to 1000 Volts (1200V Version available) Low Reverse Leakage Current Hermetically Sealed For High Efficiency Applications Available in Round and Square Tab Versions Metallurgically Bonded TX, TXV, and S-Level Screening Available 2/ Hyper Fast Version available MAXIMUM RATINGS 3/ RATING Peak Repetitive Reverse Voltage And DC Blocking Voltage SDR1A .. SDR1B .. SDR1D .. SDR1G .. SDR1J .. SDR1K .. SDR1M .. Average Rectified Forward Current (Resistive Load, 60 Hz, Sine Wave, TA = 25ºC) Peak Surge Current (8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach equilibrium between pulses, TA = 25ºC) Operating & Storage Temperature Thermal Resistance, Junction to End Tab SM & SMS NOTES: SYMBOL VALUE UNIT VRRM VRWM VR 50 100 200 400 600 800 1000 Volts IO 1 Amp IFSM 25 Amps TOP and TSTG RθJE -65 to +175 ºC ºC/W SM (Round Tab) 28 SMS (Square Tab) 1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory. 2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request 3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. 4/ Recovery Conditions: IF = 0.5 Amp, IR = 1.0 Amp, IRR to .25 Amp. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0003H DOC SDR1ASM & SMS thru SDR1MSM & SMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com ELECTRICAL CHARACTERISTICS 3/ Maximum Limit CHARACTERISTICS SDR1A .. thru SDR1D .. SDR1G .. thru SDR1J .. SDR1K .. thru SDR1M .. Instantaneous Forward Voltage Drop (IF = 1Adc, 300 µs Pulse, TA = 25ºC) SDR1A .. thru SDR1D .. SDR1G .. thru SDR1J .. Instantaneous Forward Voltage Drop (IF = 1Adc, 300 µs Pulse, TA = -55ºC) VF1 VF2 SDR1K .. thru SDR1M .. SDR1A .. thru SDR1D .. SDR1G .. thru SDR1J .. SDR1K .. thru SDR1M .. Reverse Leakage Current (Rated VR, 300 µs Pulse Minimum , TA = 25ºC) SDR1A .. thru SDR1D .. SDR1G .. thru SDR1J .. Reverse Leakage Current (Rated VR, 300 µs Pulse Minimum , TA = 100ºC) SDR1A .. thru SDR1D .. SDR1G .. thru SDR1J .. SDR1K .. thru SDR1M .. SDR1A .. thru SDR1D .. SDR1G .. thru SDR1J .. SDR1K .. thru SDR1M .. Reverse Recovery Time 4/ A B C D SM SMS 1.3 1.3 2.5 0.96 1.3 1.9 1.45 1.45 2.1 2.1 2.65 2.3 UNIT Vdc Vdc IR1 5 μA IR2 250 μA CJ trr DIMENSIONS DIM. Package SDR1K .. thru SDR1M .. Junction Capacitance (VR = 10Vdc, TA = 25ºC , f = 1MHz) Round Tab Surface Mount (SM): SYMBOL MIN. 40 15 10 25 15 50 60 70 50 60 70 MAX. Square Tab Surface Mount (SMS) : .095” .105” .190” .210” .010” .030” ----- NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. 15 DATA SHEET #: RU0003H pf ns DIMENSIONS DIM. MIN. MAX. A B C D .134” .200” .022” .002” .153” .280” .028” --- DOC