PRELIMINARY SPD48SM &SMS Thru SPD51SM & SMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ 200 mAMP 50-125 Volts 5 nsec SPD _ _ __ __ ⏐ ⏐ ⏐ ⏐ ⏐ ⏐ ⏐ ⏐ ⏐ ⏐ ⏐ L Screening 2/ = None TX = TX Level TXV = TXV Level S = S Level L Package SM = Surface Mount Round Tab SMS = Surface Mount Square Tab L Voltage 48 = 50 V 49 = 75 V 50 = 100 V 51 = 125 V HYPER FAST RECTIFIER Features: • • • • • • • • Maximum Ratings Peak Repetitive Reverse and DC Blocking Voltage SPD48SM & SMS SPD49SM & SMS SPD50SM & SMS SPD51SM & SMS Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25ºC) Peak Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to Reach Equilibrium Between Pulses, TA = 25ºC) Operating & Storage Temperature Maximum Thermal Resistance Junction to End Tab 1/ For Ordering Information, Price, and Availability – Contact Factory. 2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. Hyper Fast Recovery: 5 nsec maximum Subminiature Surface Mount Package Square Tab Mounting (Round Tabs Available) Hermetically Sealed Planar Passivated Chip For High Efficiency Applications Replaces 1N4148 – 1N4151 types TX, TXV and S – Level Screening Available2/ Symbol Value Units VRRM VRWM VR 50 75 100 125 Volts Io 200 mAmps IFSM 4 Amps Top & Tstg -65 to +200 ºC RθJE 0.35 ºC/mW SM (Round) DATA SHEET #: RH0085D SMS (Square) DOC PRELIMINARY SPD48SM &SMS Thru SPD51SM & SMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristics Symbol Instantaneous Forward Voltage Drop (TA = 25ºC, 300-500μs pulse) Instantaneous Forward Voltage Drop (TA = -55ºC, 300-500μs pulse) Reverse Leakage Current (Rated VR, TA = 25ºC, 300μs minimum pulse) Reverse Leakage Current (Rated VR, TA = 100ºC, 300μs minimum pulse) Junction Capacitance (VR = 10 Vdc, TA = 25ºC, f = 1MHz) Reverse Recovery Time (IF = 50 mA, IR = 100mA, IRR = 25mA, TA = 25ºC) IF = 10mADC IF = 100mADC IF = 10mADC IF = 100mADC VF1 VF2 Max 1.0 1.2 1.1 1.3 Units VDC VDC IR1 400 nA IR2 40 μA CJ 2.8 pF trr 5 nsec DIM A B C D DIMENSIONS MIN 0.054” –– 0.010” .001” Case Outline: Round Tab (SM) MAX 0..085” 0.150” 0.028” –– Case Outline: Square Tab (SMS) B A A C DIMENSIONS SDR1304 & SDR1306 DIM MIN MAX 0.065” 0.085” A --0.200” B 0.022” 0.028” C 0.001” --D D NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0085D DOC