VISHAY 10BQ100M

VS-10BQ100-M3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 1 A
FEATURES
• Low forward voltage drop
Cathode
Anode
• Guard ring for enhanced ruggedness and long
term reliability
• Small foot print, surface mountable
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
PRODUCT SUMMARY
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Package
SMB
IF(AV)
1A
VR
100 V
DESCRIPTION
VF at IF
0.59 V
IRM
1 mA at 125 °C
The VS-10BQ100-M3 surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and very small foot prints on PC boards. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
TJ max.
175 °C
Diode variation
Single die
EAS
1.0 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
VALUES
UNITS
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF
1.0 Apk, TJ = 125 °C
TJ
Range
1
A
100
V
780
A
0.59
V
- 55 to 175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
VS-10BQ100-M3
UNITS
100
V
VR
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
IF(AV)
50 % duty cycle at TL = 143 °C, rectangular waveform
1.0
A
Maximum peak one cycle
non-repetitive surge current
IFSM
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 0.5 A, L = 8 mH
1.0
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
0.5
A
Repetitive avalanche current
Revision: 29-May-12
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and with
rated VRRM applied
780
A
38
Document Number: 93227
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10BQ100-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
1A
Maximum forward voltage drop
See fig. 1
VFM (1)
TJ = 25 °C
2A
1A
TJ = 125 °C
2A
TJ = 25 °C
VALUES
UNITS
0.75
0.82
V
0.59
0.65
0.5
Maximum reverse leakage current
See fig. 2
IRM
Typical junction capacitance
CT
VR = 5 VDC, (test signal range 100 kHz to 1 MHz), 25 °C
65
pF
Typical series inductance
LS
Measured lead to lead 5 mm from package body
2.0
nH
10 000
V/μs
VALUES
UNITS
- 55 to 175
°C
Maximum voltage rate of charge
dV/dt
VR = Rated VR
TJ = 125 °C
Rated VR
mA
1
Note
(1) Pulse width = 300 μs, duty cycle = 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and
storage temperature range
TJ (1), TStg
Maximum thermal resistance,
junction to lead
RthJL (2)
Maximum thermal resistance,
junction to ambient
RthJA
TEST CONDITIONS
DC operation
°C/W
80
Approximate weight
Marking device
36
Case style SMB (similar DO-214AA)
0.10
g
0.003
oz.
1J
Notes
(1)
(2)
dP tot
1
------------- < -------------- thermal runaway condition for a diode on its own heatsink
dT J R thJA
Mounted 1" square PCB
Revision: 29-May-12
Document Number: 93227
2
For technical questions within your region: [email protected], [email protected], DiodesE[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10BQ100-M3
Vishay Semiconductors
10
10
175 °C
IR - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
www.vishay.com
TJ = 175 °C
1
TJ = 125 °C
TJ = 25 °C
150 °C
1
125 °C
0.1
100 °C
75 °C
0.01
50 °C
0.001
25 °C
0.0001
0.00001
0.1
0.2
0.4
0.6
0.8
1.0
0
1.2
20
40
60
80
100
VR - Reverse Voltage (V)
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Peak Reverse Current vs.
Reverse Voltage
CT - Junction Capacitance (pF)
100
10
0
20
40
80
60
100
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
ZthJC - Thermal Impedance (°C/W)
1 00
10
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
PDM
t1
t2
1
Notes:
1. Duty factor D = t1/ t2
Single pulse
(thermal resistance)
.
2. Peak TJ = Pdm x ZthJC + Tc
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
.
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 29-May-12
Document Number: 93227
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10BQ100-M3
Vishay Semiconductors
0.8
180
170
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
160
150
Average Power Loss (W)
Allowable Case Temperature (°C)
www.vishay.com
DC
140
130
Square wave (D = 0.50)
80 % rated VR applied
120
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.6
RMS limit
0.4
DC
0.2
see note (1)
0
110
0.0
0.3
0.6
0.9
1.2
0
1.5
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Average Forward Current vs.
Allowable Lead Temperature
Fig. 6 - Maximum Average Forward Dissipation vs.
Average Forward Current
IFSM - Non-Repetitive Surge Current (A)
IF(AV) - Average Forward Current (A)
1000
100
At any rated load condition and
with rated VRRM applied
following surge
10
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 29-May-12
Document Number: 93227
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10BQ100-M3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
10
B
Q
100
-M3
1
2
3
4
5
6
1
-
Vishay Semiconductors product
2
-
Current rating
3
-
B = SMB
4
-
Q = Schottky “Q” series
5
-
Voltage rating (100 = 100 V)
6
-
Environmental digit:
-M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-10BQ100-M3/5BT
PREFERRED PACKAGE CODE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
5BT
3200
13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95401
Part marking information
www.vishay.com/doc?95403
Packaging information
www.vishay.com/doc?95404
Revision: 29-May-12
Document Number: 93227
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000